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NXP Semiconductors PHD36N03LT,118
- Part No.:
- PHD36N03LT,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
PHD36N03LT,118.pdf
- Description:
- MOSFET N-CH 30V 43.4A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,960
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Product details
Overview
PHD36N03LT,118 from NXP Semiconductors (formerly Philips) is a logic-level N-channel TrenchMOS FET in DPAK (SOT428) package, rated for 30 V VDS, 43.4 A continuous drain current at Tmb = 25 °C, and 17 mΩ RDS(on) at VGS = 10 V - optimized for high-efficiency DC-DC converters and switched-mode power supplies.
For engineers reviewing the PHD36N03LT,118 datasheet, PHD36N03LT,118 pinout, PHD36N03LT,118 application, or PHD36N03LT,118 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1–2 V), low gate charge (18.5 nC), thermal resistance to mounting base (2.6 K/W), and SOT428 surface-mount packaging with isolated gate terminal.
Technical Context
This device uses TrenchMOS technology to achieve low RDS(on) and fast switching with minimal gate drive requirements. Its gate-source threshold voltage (1–2 V at 25 °C) enables direct interface with 3.3 V and 5 V logic controllers without level-shifting circuitry.
The PHD36N03LT,118 features a thermally enhanced DPAK package where the mounting base is internally connected to the drain, enabling efficient heat transfer to PCB copper or external heatsinks. Safe operating area (SOA) supports pulsed peak drain currents up to 173.6 A for ≤10 µs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum drain-source blocking voltage; suitable for 24 V rail systems with margin. |
| ID (continuous) | 43.4 A at Tmb = 25 °C - usable current capacity with adequate board-level thermal management. |
| RDS(on) | 17 mΩ max at VGS = 10 V, Tj = 25 °C - ensures <1.5 W conduction loss at 30 A, critical for efficiency in power stages. |
| QG(tot) | 18.5 nC typical - enables fast turn-on/off with moderate gate driver strength (e.g., TC442x or similar). |
| VGS(th) | 1.5 V typical (1–2 V range) - guarantees reliable turn-on with standard 3.3 V microcontroller GPIOs. |
| Rth(j-mb) | 2.6 K/W - junction-to-mounting-base thermal resistance defines minimum copper area required for thermal compliance. |
| Package | SOT428 (DPAK) - surface-mount plastic package with drain-connected mounting base; lead 2 inaccessible per design. |
Pinout & Package
PHD36N03LT,118 uses the SOT428 (DPAK) package: plastic single-ended surface-mounted outline with 3 leads (lead 2 cropped and non-connectable). Mounting base is electrically connected to drain and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; accepts logic-level voltage (≥2.5 V) to fully enhance channel; isolated from drain/source. |
| 2 | Drain (D) | Not accessible - internal connection only to mounting base; no external lead provided in SOT428 variant. |
| 3 | Source (S) | Power return node; referenced for gate drive; forms low-side switch common point in buck/boost topologies. |
| Mounting Base | Drain (D) | Electrically and thermally tied to drain; must be soldered to large copper pour or heatsink for thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully with 3.3 V or 5 V controllers - eliminates need for gate driver ICs in many low-voltage SMPS designs. |
| Low RDS(on) | 17 mΩ max at 10 V drive reduces conduction losses and improves system efficiency in high-current paths. |
| TrenchMOS architecture | Enables higher cell density and lower gate charge versus planar MOSFETs - improves switching efficiency at 100–500 kHz. |
| Thermally optimized DPAK | 2.6 K/W Rth(j-mb) allows >40 W dissipation with proper PCB copper - supports compact, high-power-density layouts. |
| Robust SOA | Rated for 173.6 A pulsed drain current (tp ≤10 µs) - withstands inrush and fault transients in motor drives and converters. |
Applications
| DC-DC Converters | Switched-Mode Power Supplies |
|---|---|
|
Use Scenario: High-current synchronous buck converter in telecom or server POL (point-of-load) modules. IC Role / Device Role / Timing Role: Low-side power switch in synchronous rectification stage; driven by PWM controller with 100–300 ns dead-time control. Use Value: 17 mΩ RDS(on) minimizes I²R losses at 30–40 A loads, directly improving conversion efficiency above 92% at full load. |
Use Scenario: Primary-side switch in 24 V input, 12 V/20 A output AC-DC adapter using flyback topology. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into transformer; operated at 65–130 kHz with zero-voltage switching assist. Use Value: 18.5 nC QG(tot) enables fast switching with low gate drive power, reducing driver losses and EMI generation. |
| Motor Control Drivers | Load Switches |
|
Use Scenario: H-bridge half-bridge leg in 24 V brushed DC motor driver for industrial actuators. IC Role / Device Role / Timing Role: High-current quadrant switch handling bidirectional current; controlled via microcontroller PWM with shoot-through protection. Use Value: VGS(th) of 1.5 V ensures robust turn-on even under marginal supply conditions, preventing partial enhancement and thermal runaway. |
Use Scenario: Hot-swap and inrush-limited 24 V power distribution to FPGA or ASIC subsystems. IC Role / Device Role / Timing Role: Single-pole, normally-open power switch; gate slew-rate controlled to limit dI/dt during turn-on. Use Value: Integrated source-drain diode (VSD = 0.97 V typ) provides reverse-current blocking and body-diode conduction during transient events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP36NF03L | RDS(on) = 15 mΩ max at VGS = 10 V; TO-220 package (SOT78 equivalent); higher Rth(j-a) (60 K/W) than PHD36N03LT,118's DPAK. | Better conduction loss but requires through-hole mounting and external heatsink; less suitable for dense SMT layouts. | Choose STP36NF03L when board space permits TO-220 and thermal budget favors lower RDS(on) over SMT integration. |
| IRL3803PBF | RDS(on) = 12 mΩ max at VGS = 10 V; TO-220AB package; gate charge 32 nC - 72% higher than PHD36N03LT,118. | Lower on-resistance but slower switching due to higher QG; increased driver loss and reduced efficiency at >200 kHz. | Choose IRL3803PBF only if conduction loss dominates system loss budget and switching frequency remains below 100 kHz. |
Compared with STP36NF03L and IRL3803PBF, PHD36N03LT,118 delivers optimal balance of low gate charge, SMT-compatible DPAK packaging, and verified 17 mΩ RDS(on) - making it preferred for space-constrained, medium-frequency SMPS where thermal coupling to PCB is prioritized.
Availability
PHD36N03LT,118 is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and motor control drivers requiring stable component supply and long-term industrial availability.
Supply support for PHD36N03LT,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, headquartered in Eindhoven, Netherlands.
The PHD36N03LT,118 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in compact surface-mount power conversion systems.
FAQ
What is the maximum continuous drain current rating for PHD36N03LT,118?
The PHD36N03LT,118 is rated for 43.4 A continuous drain current at mounting base temperature (Tmb) of 25 °C and VGS = 10 V. At Tmb = 100 °C, this derates to 30.7 A. Actual usable current depends on PCB copper area, airflow, and thermal interface to the mounting base - which is electrically connected to the drain.
Is PHD36N03LT,118 compatible with 3.3 V microcontroller GPIOs?
Yes. The PHD36N03LT,118 has a gate-source threshold voltage (VGS(th)) of 1–2 V typical at 25 °C, ensuring full enhancement with 3.3 V logic. At VGS = 4.5 V, RDS(on) is guaranteed ≤22 mΩ - confirming robust operation without external level-shifting circuitry.
What is the thermal resistance from junction to mounting base for PHD36N03LT,118?
The PHD36N03LT,118 has a maximum thermal resistance Rth(j-mb) of 2.6 K/W. This value assumes proper soldering of the mounting base to ≥10 cm² of 2 oz copper on FR-4 PCB. It defines the upper bound of steady-state power dissipation before exceeding Tj = 175 °C.
Does PHD36N03LT,118 have an integrated body diode, and what is its forward voltage?
Yes. The PHD36N03LT,118 includes an inherent source-drain body diode. At IS = 25 A and VGS = 0 V, the typical forward voltage (VSD) is 0.97 V, with a maximum of 1.2 V. This diode supports freewheeling current in inductive loads and reverse-current blocking in load-switch applications.
Can PHD36N03LT,118 be used in a high-side switch configuration?
No. The PHD36N03LT,118 is an N-channel device with its mounting base tied to the drain. In high-side configurations, the source would be at varying potential, requiring gate drive above the source - which is incompatible with its logic-level gate design and fixed mounting base reference. It is intended exclusively for low-side or common-drain (source-follower) topologies.
PHD36N03LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 43.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 690 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57.6W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
PHD36N03LT,118 FAQ
1.How can I place an order for PHD36N03LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHD36N03LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHD36N03LT,118 reliable?
The price and inventory of PHD36N03LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD36N03LT,118 is usually 5 days.
3.What payment methods are accepted for PHD36N03LT,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHD36N03LT,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHD36N03LT,118?
PHD36N03LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHD36N03LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHD36N03LT,118?
For technical support, including PHD36N03LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD36N03LT,118 requirements.
6.How does Aetrix verify that PHD36N03LT,118 is sourced from the original manufacturer or authorized distributors?
All PHD36N03LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD36N03LT,118 meets industry standards.
7.What is the process for return or replacement of PHD36N03LT,118?
All PHD36N03LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD36N03LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHD36N03LT,118 part is unused and in its original packaging.
Return procedure for PHD36N03LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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