NXP Semiconductors PHD37N06LT,118

Overview

PHD37N06LT from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode logic-level power MOSFET using TrenchMOS™ technology, rated for 55 V drain-source voltage, 37 A continuous drain current at T_mb = 25 °C, and R_DS(ON) ≤ 35 mΩ at V_GS = 5 V. It serves as a high-efficiency switching element in DC-DC converters and industrial power supplies.

For engineers reviewing the PHD37N06LT datasheet, PHD37N06LT pinout, PHD37N06LT application, or PHD37N06LT equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low thermal resistance (R_{th j-mb} = 1.5 K/W), and surface-mount SOT428 package optimized for PCB thermal management in high-current switching designs.

Technical Context

This device implements a trench-gate vertical DMOS structure enabling low R_DS(ON) and fast switching with Q_g(tot) = 22.5 nC and t_f = 48–65 ns. Its gate threshold voltage remains stable across temperature (0.5–2.3 V from −55 °C to 175 °C), supporting robust operation in automotive and industrial environments.

The integrated body diode exhibits V_SD = 0.95–1.2 V at I_F = 25 A and t_rr = 40 ns, enabling synchronous rectification and flyback recovery. Avalanche energy rating W_DSS = 45 mJ (unclamped, T_mb = 25 °C) confirms ruggedness under inductive turn-off stress.

Key Specifications

Pinout & Package

SOT428 (Power-SO8) surface-mount package with exposed metal tab thermally and electrically connected to drain. Pin 2 is internally inaccessible per datasheet note: "It is not possible to make connection to pin 2 of the SOT428..."

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP36NF06L and IRF7470PBF, the PHD37N06LT uniquely combines SOT428 surface-mount packaging, 45 mJ avalanche rating, and 35 mΩ on-resistance at 5 V-making it optimal for space-constrained, high-reliability industrial switching where thermal performance and ruggedness are critical.

Availability

PHD37N06LT is available at Aetrix Electronics and suitable for DC-DC converters, motor control drivers, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PHD37N06LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications.

The PHD37N06LT belongs to NXP's TrenchMOS™ logic-level power MOSFET family, engineered for high-efficiency, high-reliability switching in space-constrained industrial and automotive power systems.

FAQ

What is the maximum gate-source voltage rating for PHD37N06LT?

The PHD37N06LT has a maximum gate-source voltage rating of ±13 V, as specified in the Absolute Maximum Ratings table. Exceeding this voltage risks permanent gate oxide damage. Designers should ensure gate drive circuits limit V_GS within this range, especially during transient conditions or level-shifted drive scenarios. The PHD37N06LT gate threshold voltage is 1.0–2.0 V, making it compatible with standard 3.3 V and 5 V logic interfaces without requiring external level shifters.

Does PHD37N06LT support logic-level gate drive from a 3.3 V microcontroller?

Yes, the PHD37N06LT supports logic-level gate drive from a 3.3 V microcontroller. Its gate threshold voltage V_GS(TO) is specified from 1.0 V (min) to 2.0 V (max) at 25 °C, and it delivers R_DS(ON) ≤ 35 mΩ at V_GS = 5 V. While full enhancement occurs at 5 V, the PHD37N06LT remains partially conductive at 3.3 V-verified by sub-threshold curves in the datasheet-enabling functional operation in low-power or marginally driven applications, though with higher on-resistance than at 5 V.

What is the thermal resistance from junction to mounting base for PHD37N06LT?

The PHD37N06LT has a typical thermal resistance from junction to mounting base (R_{th j-mb}) of 1.5 K/W, with a maximum of 1.5 K/W. This value applies specifically to the SOT428 package when the exposed metal tab is properly soldered to a thermally optimized PCB copper area. This low thermal resistance enables efficient heat transfer to the board or external heatsink, supporting continuous power dissipation up to 100 W at T_mb = 25 °C. The PHD37N06LT datasheet confirms this parameter under "Thermal Resistances" with test conditions matching JEDEC JESD51 standards.

Is PHD37N06LT suitable for avalanche-prone circuits like inductive load switching?

Yes, the PHD37N06LT is explicitly rated for unclamped inductive turn-off with an avalanche energy rating W_DSS = 45 mJ at T_mb = 25 °C, ID = 20 A, V_DD ≤ 25 V, and V_GS = 5 V. This makes it suitable for driving relays, solenoids, and motor windings where inductive kickback occurs. The PHD37N06LT datasheet includes Fig.16 showing the standardized avalanche test circuit and Fig.15 confirming energy derating versus mounting base temperature-critical for reliable operation in automotive and industrial actuator control.

What is the reverse diode forward voltage of PHD37N06LT at 25 A?

The reverse diode (body diode) forward voltage V_SD of the PHD37N06LT is specified as 0.95–1.2 V at I_F = 25 A and V_GS = 0 V, per the "Reverse Diode Characteristics" table. This low forward drop improves efficiency in freewheeling and synchronous rectification applications compared to discrete Schottky diodes in similar packages. The PHD37N06LT body diode also exhibits t_rr = 40 ns, enabling high-frequency operation without excessive switching loss or voltage overshoot.