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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PHD38N02LT,118

Name: PHD38N02LT,118
Brand: Nexperia USA Inc.
SKU: PHD38N02LT,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHD38N02LT,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: PHD38N02LT,118.pdf

Description:: MOSFET N-CH 20V 44.7A DPAK

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Product details

Overview

PHD38N02LT from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in DPAK (SOT428) package, designed for low-voltage switching with 2.5 V gate drive capability, 20 V drain-source rating, 44.7 A continuous drain current at T_mb = 25 °C, and 13.5 mΩ typical R_DS(on) at V_GS = 5 V - used in DDR memory linear regulators.

For engineers reviewing the PHD38N02LT datasheet, PHD38N02LT pinout, PHD38N02LT application, or PHD38N02LT equivalent, this device is selected for high-current, low-V_GS power switching where thermal performance on PCB-mounted base and fast turn-on/turn-off timing are critical.

Technical Context

This FET employs TrenchMOS technology to achieve low R_DS(on) and enhanced gate charge efficiency, supporting logic-level drive down to 2.5 V while maintaining robust safe operating area up to 179 A peak pulsed current. Its mounting base (pin 2) is internally connected to drain and serves as primary thermal path.

The device features a source-drain diode with 0.98 V forward voltage at 25 A and exhibits stable threshold voltage (V_GS(th) = 0.5–1.5 V) across −55 °C to +175 °C junction temperature, enabling reliable operation in thermally demanding DC-DC and load-switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V maximum - defines absolute upper limit for drain-source blocking in DDR supply rails and low-voltage load switches.
I_D (continuous)	44.7 A at T_mb = 25 °C - supports high-current linear regulation without external heatsink under moderate PCB copper area.
R_DS(on)	13.5 mΩ typical at V_GS = 5 V, T_j = 25 °C - enables <1.1 W conduction loss at 25 A, critical for thermal budget in compact DDR modules.
Q_G(tot)	15.1 nC - determines gate driver strength requirement; compatible with standard logic-level drivers (e.g., microcontroller GPIO or dedicated gate buffers).
R_th(j-mb)	2.6 K/W - quantifies thermal resistance from junction to mounting base, enabling accurate PCB thermal design using copper pour under the DPAK base.
V_GS(th)	0.5–1.5 V at T_j = 25 °C - ensures full enhancement with 2.5 V logic signals, eliminating need for level-shifting in 3.3 V or lower control systems.

Pinout & Package

PHD38N02LT uses the SOT428 (DPAK) plastic surface-mount package with three leads and one cropped lead. The mounting base (mb) is electrically connected to the drain and serves as the primary thermal interface to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts logic-level input (2.5–12 V); requires ≤15.1 nC charge for full turn-on.
2 (D / mb)	Drain & Mounting Base	Main power input; electrically tied to exposed metal pad; must be soldered to large PCB copper area for thermal management.
3 (S)	Source	Power return path; referenced to system ground in low-side switch configuration; carries full load current.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 2.5 V - eliminates gate driver ICs in 3.3 V/2.5 V control domains.
TrenchMOS architecture	Delivers 13.5 mΩ R_DS(on) with minimal gate charge - improves switching efficiency and reduces driver losses.
Drain-connected mounting base	2.6 K/W R_th(j-mb) enables >50 W power dissipation with proper PCB copper - avoids discrete heatsinks in space-constrained DDR modules.
Robust SOA	179 A peak drain current (10 µs pulse) supports inrush current handling in hot-swap and load-switch applications.

Applications

DDR Memory Linear Regulator

Hot-Swap Load Switch

Use Scenario: Provides precise, low-noise voltage regulation for DDR2/DDR3 memory termination supplies (VTT), requiring fast transient response and minimal dropout.

IC Role / Device Role / Timing Role: Low-side pass element in linear regulator topology; conducts continuously during memory operation.

Use Value: 13.5 mΩ R_DS(on) limits dropout to <0.3 V at 20 A, preserving tight VTT tolerance while dissipating <1.2 W under full load.

Use Scenario: Enables controlled power-up of peripheral modules (e.g., USB add-on cards, FPGA mezzanines) without inrush-induced rail collapse.

IC Role / Device Role / Timing Role: High-current, low-V_GS power switch placed between main rail and module input; driven by enable signal.

Use Value: 179 A peak current rating safely handles 100 ms inrush surges; 2.5 V gate compatibility allows direct MCU GPIO control.

Industrial 24 V DC Load Switch

Automotive Body Control Module (BCM) Output

Use Scenario: Replaces electromechanical relays in programmable 24 V industrial I/O modules for solenoid, valve, and lamp loads.

IC Role / Device Role / Timing Role: Low-side switching element; handles resistive and inductive loads with integrated freewheeling path via body diode.

Use Value: 0.98 V V_SD at 25 A enables efficient inductive flyback clamping; 20 V V_DS rating suits 24 V nominal systems with 30 V transients.

Use Scenario: Drives interior lighting, seat motors, and window lifters in automotive BCMs where space and thermal constraints limit discrete solutions.

IC Role / Device Role / Timing Role: High-side or low-side power switch; operated under PWM or on/off control per vehicle ECU command.

Use Value: −55 °C to +175 °C operating range meets AEC-Q101 ambient requirements; 1.5 V max V_GS(th) ensures turn-on with 3.3 V CAN/LIN controller outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL32N20L	R_DS(on) = 15 mΩ @ V_GS = 4.5 V; 20 V V_DS; same DPAK package but higher gate charge (22 nC).	Slightly higher conduction loss and slower switching due to larger Q_G; less suitable for high-frequency PWM.	Prefer PHD38N02LT when minimizing gate drive burden or optimizing thermal performance on limited PCB copper.
IRLML6344TRPBF	R_DS(on) = 22 mΩ @ V_GS = 2.5 V; 20 V V_DS; SOT-23 package (lower power, no mounting base).	Not thermally scalable beyond ~3 A; lacks drain-connected thermal pad - unsuitable for >10 W dissipation.	Choose PHD38N02LT for applications exceeding 10 W power handling or requiring PCB-level thermal management.

Compared with STL32N20L and IRLML6344TRPBF, PHD38N02LT delivers superior thermal performance via its DPAK mounting base and lowest gate charge among 20 V logic-level FETs, making it optimal for high-current linear regulation and robust load switching where board-level heat spreading is essential.

Availability

PHD38N02LT is available at Aetrix Electronics and suitable for DDR memory linear regulators, hot-swap load switches, and industrial 24 V DC load switching requiring stable component supply and long-term manufacturability.

Supply support for PHD38N02LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

PHD38N02LT belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered for high-efficiency, low-voltage switching in space-constrained power management systems where gate drive simplicity and thermal reliability are critical.

FAQ

Is PHD38N02LT suitable for high-frequency PWM applications?

No - PHD38N02LT is optimized for DC and low-frequency switching (≤100 kHz) due to its 15.1 nC total gate charge and 30 ns turn-off delay. For high-frequency SMPS, devices with lower Q_G and faster t_f/t_r (e.g., <5 ns) are recommended. Its strength lies in linear regulation and load switching where efficiency stems from ultra-low R_DS(on), not switching speed.

Can PHD38N02LT be used in high-side switch configurations?

Yes, but only with appropriate gate drive circuitry that provides V_GS ≥ 2.5 V relative to the source node. Since it is an N-channel device, high-side use requires a bootstrap or isolated gate driver to elevate the gate voltage above the drain rail. It is more commonly deployed as a low-side switch for simplicity and thermal efficiency.

What is the significance of the "cropped lead" in the DPAK package?

The cropped lead (lead 2) in SOT428 corresponds to the drain connection and is internally bonded to the mounting base. This design maximizes thermal contact area between the die and PCB copper while minimizing parasitic inductance. The cropped geometry prevents accidental shorting during assembly and ensures mechanical stability when soldered to a thermal pad.

Does PHD38N02LT have avalanche ruggedness rated in the datasheet?

No - the datasheet does not specify single-pulse or repetitive avalanche energy (E_AS). It is not characterized or guaranteed for unclamped inductive switching. Designers must ensure external protection (e.g., TVS, snubbers) or operate within the SOA curve (Figure 3) to avoid destructive failure during inductive load switching.

PHD38N02LT,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 44.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 25A, 5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15.1 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 57.6W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

PHD38N02LT,118 FAQ

1.How can I place an order for PHD38N02LT,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHD38N02LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHD38N02LT,118 reliable?

The price and inventory of PHD38N02LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD38N02LT,118 is usually 5 days.

3.What payment methods are accepted for PHD38N02LT,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHD38N02LT,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHD38N02LT,118?

PHD38N02LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHD38N02LT,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHD38N02LT,118?

For technical support, including PHD38N02LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD38N02LT,118 requirements.

6.How does Aetrix verify that PHD38N02LT,118 is sourced from the original manufacturer or authorized distributors?

All PHD38N02LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD38N02LT,118 meets industry standards.

7.What is the process for return or replacement of PHD38N02LT,118?

All PHD38N02LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD38N02LT,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHD38N02LT,118 part is unused and in its original packaging.

Return procedure for PHD38N02LT,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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