NXP Semiconductors PHD45N03LTA,118

Overview

PHD45N03LTA from NXP Semiconductors (formerly Philips) is an N-channel logic-level TrenchMOS™ power MOSFET in SOT428 (D-PAK) package, rated for 25 V V_DS, 40 A I_D (DC, T_mb = 25 °C), and 65 W P_tot. It delivers low R_DS(on) of 17.5 mΩ (typ, V_GS = 5 V, I_D = 25 A, T_j = 25 °C) and supports fast switching in high-frequency DC–DC converters on computer motherboards.

For engineers reviewing the PHD45N03LTA datasheet, PHD45N03LTA pinout, PHD45N03LTA application, or PHD45N03LTA equivalent, this page provides verified pin configuration, thermal resistance (R_th(j-mb) = 2.3 K/W), avalanche energy rating (40 mJ), gate charge (Q_g(tot) = 19 nC), and diode forward voltage (V_SD = 0.95 V typ at I_S = 25 A).

Technical Context

This device uses TrenchMOS™ technology to achieve low on-resistance with logic-level gate drive compatibility (V_GS(th) = 1.5 V typ, operational down to 3.5 V). Its R_DS(on) remains stable across temperature (30 mΩ max at T_j = 175 °C), and it features integrated source-drain diode with 0.95 V forward drop at 25 A.

The PHD45N03LTA operates within a junction temperature range of −55 °C to +175 °C and exhibits robust unclamped inductive avalanche capability (E_DS(AL)S = 40 mJ). Its dynamic parameters-Q_gd = 8–11 nC, C_iss = 700 pF, t_d(on) = 10–20 ns-support high-efficiency synchronous rectification and PWM control in compact power stages.

Key Specifications

Pinout & Package

SOT428 (D-PAK) package with isolated mounting base connected internally to drain (pin 2); pin 2 is not externally accessible in SOT428 per datasheet note [1]. Mounting base serves as primary thermal path and electrical connection to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3803PBF and STP40NF03L, PHD45N03LTA offers superior package compatibility for surface-mount high-density designs (SOT428), verified 40 mJ avalanche rating for reliability in inductive switching, and optimized thermal path (2.3 K/W) - making it preferred for motherboard VRMs and compact PoL converters where layout, ruggedness, and thermal management are co-constrained.

Availability

PHD45N03LTA is available at Aetrix Electronics and suitable for computer motherboard VRMs, point-of-load DC–DC converters, and industrial motor driver half-bridges requiring stable component supply and long-term lifecycle support.

Supply support for PHD45N03LTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, headquartered in Eindhoven, Netherlands.

The PHD45N03LTA belongs to the TrenchMOS™ logic-level FET product line, engineered specifically for high-efficiency, high-frequency switching in space-constrained power conversion systems such as computing and telecom infrastructure.

FAQ

What is the maximum continuous drain current for PHD45N03LTA at 100 °C mounting base temperature?

The PHD45N03LTA supports 30 A continuous drain current (I_D) at T_mb = 100 °C with V_GS = 5 V, as specified in Table 3 "Limiting values". This derating from 40 A at 25 °C reflects thermal constraints; proper heatsinking is essential to maintain safe junction temperature below 175 °C. The PHD45N03LTA datasheet Figure 2 confirms this normalized current curve.

Does PHD45N03LTA have a specified avalanche energy rating, and what are the test conditions?

Yes, PHD45N03LTA has a non-repetitive drain-source avalanche energy rating of 40 mJ (E_DS(AL)S). Per Table 3, this is measured under unclamped inductive load conditions: I_D = 20 A, pulse width t_p = 0.1 ms, V_DD = 15 V, R_GS = 50 Ω, V_GS = 5 V, with starting junction temperature at 25 °C. This rating validates robustness in inductive switching applications like DC–DC converters.

What is the gate-source threshold voltage range for PHD45N03LTA, and how does it vary with temperature?

The PHD45N03LTA gate-source threshold voltage (V_GS(th)) ranges from 1.0 V to 2.0 V at T_j = 25 °C (typical 1.5 V), narrows to 0.5–? V at T_j = 175 °C, and extends to ≤2.3 V at T_j = −55 °C (Table 5). This negative temperature coefficient ensures stable turn-on behavior across its full −55 °C to +175 °C operating range, critical for automotive and industrial environments.

Can PHD45N03LTA be used with 3.3 V gate drive, and what is its R_DS(on) under that condition?

Yes, PHD45N03LTA is explicitly characterized for 3.5 V gate drive: R_DS(on) = 22 mΩ (typ) to 40 mΩ (max) at I_D = 5.2 A and T_j = 25 °C (Table 2). While not tested at exactly 3.3 V, its V_GS(th) of 1.5 V typ and logic-level design ensure functional enhancement at 3.3 V, though R_DS(on) will be higher than at 5 V - confirm via Figure 7 in the PHD45N03LTA datasheet.

Is pin 2 of PHD45N03LTA (SOT428 package) electrically accessible for PCB routing?

No - per Section 4 "Pinning information" and footnote [1] in the PHD45N03LTA datasheet, pin 2 (drain) is not accessible in the SOT428 (D-PAK) package. It is internally connected to the mounting base, which must be soldered to a thermal pad or heatsink to establish the drain connection and provide primary thermal conduction path. External trace routing to pin 2 is physically impossible.