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NXP Semiconductors PHD77NQ03T,118
- Part No.:
- PHD77NQ03T,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
PHD77NQ03T,118.pdf
- Description:
- MOSFET N-CH 25V 75A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,406
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Product details
Overview
PHD77NQ03T,118 from NXP Semiconductors is an N-channel enhancement-mode TrenchMOS FET in DPAK (SOT428) package, rated for 25 V drain-source voltage, 75 A continuous drain current at Tmb = 25 °C, and 9.5 mΩ maximum RDS(on) at VGS = 10 V. It serves as a high-current synchronous rectifier or power switch in DC-to-DC converters and computer motherboard VRMs.
For engineers reviewing the PHD77NQ03T,118 datasheet, PHD77NQ03T,118 pinout, PHD77NQ03T,118 application, or PHD77NQ03T,118 equivalent, key selection criteria include its low RDS(on), fast switching (td(off) = 24.8 ns), avalanche ruggedness (100 mJ), thermal resistance (Rth(j-mb) = 1.4 K/W), and mounting-base–drain connection for enhanced heatsinking.
Technical Context
This device uses NXP's TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge (QGD = 3.2 nC typ, QG(tot) = 17.1 nC typ). Its gate threshold voltage (VGS(th) = 2.1–3.2 V at 25 °C) ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers.
The integrated source-drain diode exhibits VSD = 0.9–1.2 V at IS = 25 A and trr = 34 ns, supporting efficient synchronous rectification. Thermal design is simplified by the mounting base (pin 2), which is internally connected to the drain and provides direct thermal path to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum blocking voltage for low-voltage DC-DC stages (e.g., 12 V input → 1.2 V output). |
| RDS(on) max | 9.5 mΩ at VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 32 A, critical for high-efficiency VRMs. |
| ID cont | 75 A at Tmb = 25 °C - Supports high-current CPU/GPU power delivery without external heatsink under proper PCB layout. |
| QGD | 3.2 nC typical - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency. |
| Rth(j-mb) | 1.4 K/W - Junction-to-mounting-base thermal resistance enables >75 W power dissipation with 100 °C ΔT to PCB copper. |
| EDS(AL)S | 100 mJ (unclamped inductive) - Withstands single-pulse energy from inductor flyback in buck converter failure modes. |
| td(off) | 24.8 ns - Short turn-off delay supports >1 MHz switching frequencies in modern multiphase regulators. |
Pinout & Package
PHD77NQ03T,118 is housed in a plastic DPAK (SOT428) surface-mount package with three leads: Gate (pin 1), Drain (pin 2, internal mounting base), and Source (pin 3). The mounting base (mb) is electrically connected to the drain and thermally coupled to PCB copper for low-impedance heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≤±20 V drive; 1.2 Ω gate resistance limits ringing and simplifies driver design. |
| 2 | Drain (D) / Mounting Base (mb) | High-current power terminal and primary thermal interface; must be soldered to large copper pour for thermal management. |
| 3 | Source (S) | Power return path; referenced to gate drive ground; low-inductance layout essential for stable switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS technology | Enables 9.5 mΩ RDS(on) in DPAK, reducing conduction losses vs. planar MOSFETs of same footprint. |
| Mounting base–drain integration | Eliminates need for separate thermal pad; 1.4 K/W Rth(j-mb) allows direct PCB heatsinking without thermal vias. |
| Low QGD (3.2 nC) | Reduces Miller plateau time, enabling clean gate drive and minimizing shoot-through risk in synchronous buck topologies. |
| Avalanche-rated (100 mJ) | Withstands unclamped inductive switching events in DC-DC converters without derating or external snubbers. |
| Fast body diode (trr = 34 ns) | Supports synchronous rectification in high-frequency buck converters without requiring external Schottky diodes. |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Xeon or EPYC processors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–1000 kHz with 10 V gate drive. Use Value: 9.5 mΩ RDS(on) and 1.4 K/W thermal resistance enable >95% efficiency at 60 A per phase without forced air cooling. |
Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated DC-DC module for PLC I/O power rails. IC Role / Device Role / Timing Role: Primary-side high-current switch in non-synchronous or synchronous forward/buck topology. Use Value: 25 V VDS rating and 240 A peak drain current support robust operation under load transients and short-circuit conditions. |
| Computer Motherboard | Automotive Body Control Module |
Use Scenario: GPU memory rail or chipset VCCIO regulation on ATX motherboards. IC Role / Device Role / Timing Role: High-side or low-side power switch in dual-phase or triple-phase VRM with integrated PWM controller. Use Value: Fast switching (tf = 6.6 ns) and low QG allow tight duty-cycle control and reduced gate drive power consumption. |
Use Scenario: 12 V battery-fed load switch for headlight LED drivers or HVAC blower motors. IC Role / Device Role / Timing Role: Protected high-current load switch with integrated avalanche energy handling. Use Value: 100 mJ avalanche energy rating eliminates need for external TVS clamping during inductive load turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N3LLH6 | RDS(on) = 3.3 mΩ @ 10 V (lower), but in PowerFLAT 5x6 package (no mounting base); higher gate charge (QG = 32 nC). | Requires thermal vias and thicker copper; better suited for space-constrained, ultra-high-efficiency designs where board area is premium. | Select STL110N3LLH6 only if PCB layout supports aggressive thermal via arrays and gate drive can handle 32 nC. |
| IRL3803PBF | RDS(on) = 12 mΩ @ 10 V (higher), TO-220 package (larger footprint), Rth(j-c) = 1.25 K/W (less effective PCB coupling). | Relies on external heatsink; less suitable for compact VRMs but easier to prototype and service. | Choose IRL3803PBF when mechanical mounting flexibility and field-replaceability outweigh PCB thermal optimization needs. |
Compared with STL110N3LLH6 and IRL3803PBF, PHD77NQ03T,118 delivers optimal balance of low RDS(on), fast switching, and PCB-integrated thermal performance in DPAK-making it ideal for high-density, high-reliability motherboard and server VRM designs where mounting-base thermal coupling is leveraged.
Availability
PHD77NQ03T,118 is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and computer motherboard applications requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for PHD77NQ03T,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
PHD77NQ03T,118 belongs to NXP's TrenchMOS power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and industrial power supplies.
FAQ
What is the maximum continuous drain current rating for PHD77NQ03T,118?
The PHD77NQ03T,118 is rated for 75 A continuous drain current at mounting base temperature (Tmb) of 25 °C and VGS = 10 V. At Tmb = 100 °C, the rating drops to 55.9 A due to thermal derating. This value assumes adequate PCB copper area for heatsinking via the mounting base (pin 2), which is internally connected to the drain.
Does PHD77NQ03T,118 support logic-level gate drive?
Yes, PHD77NQ03T,118 has a gate-source threshold voltage (VGS(th)) of 2.1–3.2 V at 25 °C, making it compatible with 3.3 V and 5 V logic-level gate drivers. However, full RDS(on) specification (≤9.5 mΩ) requires VGS = 10 V, so optimal conduction efficiency is achieved with 10 V drive.
How is thermal management implemented in PHD77NQ03T,118?
PHD77NQ03T,118 uses its mounting base (pin 2) as the primary thermal interface-electrically connected to the drain and thermally bonded directly to PCB copper. Its junction-to-mounting-base thermal resistance is 1.4 K/W, enabling >75 W power dissipation with a 100 °C temperature rise across the copper pour, eliminating need for external heatsinks in most applications.
Is PHD77NQ03T,118 avalanche-rated, and what does that mean for circuit design?
Yes, PHD77NQ03T,118 is rated for 100 mJ of non-repetitive drain-source avalanche energy under specified test conditions (ID = 32 A, tp = 0.17 ms, VGS = 10 V). This rating allows the device to safely absorb inductive energy during transient overloads or switching faults in buck converters without requiring external clamping circuits.
What is the significance of the "118" suffix in PHD77NQ03T,118?
The "118" suffix in PHD77NQ03T,118 denotes the tape-and-reel packaging option per JEDEC standard: 1000 pieces per reel, 12 mm tape width, and embossed carrier tape. This packaging format is optimized for automated SMT placement and ensures consistent orientation and feeding during high-volume manufacturing of PHD77NQ03T,118.
PHD77NQ03T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 860 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
PHD77NQ03T,118 FAQ
1.How can I place an order for PHD77NQ03T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHD77NQ03T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHD77NQ03T,118 reliable?
The price and inventory of PHD77NQ03T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD77NQ03T,118 is usually 5 days.
3.What payment methods are accepted for PHD77NQ03T,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHD77NQ03T,118 transactions.
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4.How is shipping managed for PHD77NQ03T,118?
PHD77NQ03T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHD77NQ03T,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHD77NQ03T,118?
For technical support, including PHD77NQ03T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD77NQ03T,118 requirements.
6.How does Aetrix verify that PHD77NQ03T,118 is sourced from the original manufacturer or authorized distributors?
All PHD77NQ03T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD77NQ03T,118 meets industry standards.
7.What is the process for return or replacement of PHD77NQ03T,118?
All PHD77NQ03T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD77NQ03T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHD77NQ03T,118 part is unused and in its original packaging.
Return procedure for PHD77NQ03T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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