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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PHD82NQ03LT,118

Name: PHD82NQ03LT,118
Brand: NXP Semiconductors
SKU: PHD82NQ03LT,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHD82NQ03LT,118

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: PHD82NQ03LT,118.pdf

Description:: MOSFET N-CH 30V 75A DPAK

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Product details

Overview

PHD82NQ03LT,118 from NXP Semiconductors (formerly Philips) is an N-channel logic-level TrenchMOS™ power MOSFET in SOT428 (D-PAK) package, rated for 30 V V_DS, 75 A continuous drain current at T_mb = 25 °C, ≤8 mΩ R_DS(on) at V_GS = 10 V, and 136 W total power dissipation - designed for high-efficiency DC-DC converters and switched-mode power supplies.

For engineers reviewing the PHD82NQ03LT,118 datasheet, PHD82NQ03LT,118 pinout, PHD82NQ03LT,118 application, or PHD82NQ03LT,118 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1–2.5 V), low gate charge (16.7 nC), thermal resistance to mounting base (1.1 K/W), and diode recovery performance (t_rr = 32 ns, Q_r = 24 nC).

Technical Context

This device uses TrenchMOS™ technology to achieve low on-resistance and fast switching with logic-level gate drive capability. Its gate-source threshold voltage ranges from 0.6 V at 175 °C to 2.9 V at −55 °C, enabling robust operation across industrial temperature extremes.

The source-drain body diode supports synchronous rectification and freewheeling functions, with V_SD = 0.9–1.2 V at I_S = 25 A and reverse recovery time t_rr = 32 ns under specified dI/dt and bias conditions - critical for minimizing switching losses in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe blocking capability in low-voltage power stages.
I_D (continuous)	75 A at T_mb = 25 °C - enables high-current output in compact SMPS designs without forced cooling.
R_DS(on)	≤8 mΩ at V_GS = 10 V, T_j = 25 °C - reduces conduction loss and thermal stress in high-duty-cycle applications.
Q_g(tot)	16.7 nC - determines gate driver power requirement and influences turn-on/turn-off speed trade-offs.
t_rr	32 ns - limits diode reverse recovery energy loss during hard commutation in buck or half-bridge circuits.
R_th(j-mb)	1.1 K/W - allows direct heatsink mounting for efficient thermal management in high-power density layouts.
V_GS(th)	1.0–2.5 V at T_j = 25 °C - ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers.

Pinout & Package

SOT428 (D-PAK) plastic surface-mount package with isolated mounting base connected internally to drain; pin 2 is not accessible per datasheet note [1]. Mounting base serves as primary thermal path and electrical connection to drain node.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal requiring <17 nC total charge for full enhancement; compatible with 3.3 V/5 V microcontrollers and PWM ICs.
2	Drain (D)	Not externally accessible in SOT428; internally bonded to mounting base - used exclusively for thermal conduction and high-current drain connection via PCB copper pour.
3	Source (S)	Power return path and reference for gate drive; carries full load current and forms common node with controller ground in low-side switch configurations.
Mounting Base	Drain (D)	Electrically and thermally tied to drain; must be soldered to large copper area for thermal performance and current handling.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with V_GS ≥ 4.5 V - eliminates need for gate driver boost stages in 5 V systems.
Low R_DS(on)	6.3–8 mΩ at V_GS = 10 V - minimizes I²R losses in high-current DC-DC phases and motor drivers.
Fast diode recovery	t_rr = 32 ns, Q_r = 24 nC - reduces switching loss and EMI in synchronous rectifier and freewheeling applications.
TrenchMOS™ technology	Enables higher cell density and lower specific on-resistance vs planar MOSFETs - improves power density and thermal efficiency.
High peak current rating	I_DM = 240 A (pulsed, t_p ≤ 10 µs) - supports surge current handling in motor start-up or inrush-limited supplies.

Applications

DC-DC Converters	Switched-Mode Power Supplies
Use Scenario: High-current buck converter in telecom power shelf delivering 12 V @ 50 A. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switching at 200–500 kHz with gate driven by dedicated controller. Use Value: ≤8 mΩ R_DS(on) and 32 ns t_rr reduce conduction and recovery losses, improving efficiency by >1.2% at full load vs comparable 10 mΩ devices.	Use Scenario: Primary-side switch in 300 W AC-DC adapter using active clamp forward topology. IC Role / Device Role / Timing Role: Main power switch operating in hard-switched mode with 100 kHz frequency and 50% duty cycle. Use Value: 1.1 K/W R_th(j-mb) and 136 W P_tot allow direct heatsink mounting without thermal derating up to 75 A continuous current.
Motor Control Drivers	Industrial Power Distribution
Use Scenario: H-bridge leg in 24 V BLDC motor controller for HVAC blowers. IC Role / Device Role / Timing Role: High-current half-bridge switch with integrated body diode conducting freewheeling current during PWM off-time. Use Value: V_SD = 0.9–1.2 V and Q_r = 24 nC minimize diode conduction loss and reverse recovery spikes during commutation.	Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output module. IC Role / Device Role / Timing Role: High-reliability load switch controlling 24 V DC solenoids and indicator lamps. Use Value: Logic-level V_GS(th) (1–2.5 V) ensures full turn-on from PLC's 3.3 V or 5 V digital outputs without level-shifting circuitry.

DC-DC Converters

Switched-Mode Power Supplies

Use Scenario: High-current buck converter in telecom power shelf delivering 12 V @ 50 A.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switching at 200–500 kHz with gate driven by dedicated controller.

Use Value: ≤8 mΩ R_DS(on) and 32 ns t_rr reduce conduction and recovery losses, improving efficiency by >1.2% at full load vs comparable 10 mΩ devices.

Use Scenario: Primary-side switch in 300 W AC-DC adapter using active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch operating in hard-switched mode with 100 kHz frequency and 50% duty cycle.

Use Value: 1.1 K/W R_th(j-mb) and 136 W P_tot allow direct heatsink mounting without thermal derating up to 75 A continuous current.

Motor Control Drivers

Industrial Power Distribution

Use Scenario: H-bridge leg in 24 V BLDC motor controller for HVAC blowers.

IC Role / Device Role / Timing Role: High-current half-bridge switch with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: V_SD = 0.9–1.2 V and Q_r = 24 nC minimize diode conduction loss and reverse recovery spikes during commutation.

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output module.

IC Role / Device Role / Timing Role: High-reliability load switch controlling 24 V DC solenoids and indicator lamps.

Use Value: Logic-level V_GS(th) (1–2.5 V) ensures full turn-on from PLC's 3.3 V or 5 V digital outputs without level-shifting circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	TO-220 package (SOT78), higher R_DS(on) (8.5 mΩ), same V_DS/I_D ratings	Requires through-hole assembly and larger heatsink footprint; less suitable for space-constrained SMT designs	Select when board layout permits through-hole mounting and thermal mass is available on heatsink side.
IRFZ44NPBF	D-PAK (TO-252) package, higher R_DS(on) (17.5 mΩ), lower I_D (49 A), older planar process	Limited current capability and higher conduction loss - unsuitable for >40 A continuous applications	Acceptable only for cost-sensitive, lower-power replacements where efficiency and thermal margin are secondary.

Compared with STP80NF55-08 and IRFZ44NPBF, PHD82NQ03LT,118 delivers superior power density via SOT428 packaging, lower R_DS(on), and faster diode recovery - making it optimal for high-efficiency, high-current SMT power stages where thermal and layout constraints are critical.

Availability

PHD82NQ03LT,118 is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and motor control drivers requiring stable component supply and long-term industrial availability.

Supply support for PHD82NQ03LT,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog, logic, and power semiconductor solutions with deep expertise in automotive, industrial, and consumer applications.

The PHD82NQ03LT,118 belongs to the TrenchMOS™ logic-level FET product line, engineered specifically for high-efficiency, high-current switching in compact surface-mount power conversion systems.

FAQ

What is the maximum continuous drain current rating for PHD82NQ03LT,118?

The PHD82NQ03LT,118 is rated for 75 A continuous drain current at mounting base temperature T_mb = 25 °C and V_GS = 10 V. Derating applies above 25 °C - at T_mb = 100 °C, the device still supports 75 A due to its low R_DS(on) and optimized thermal design. This rating assumes proper PCB copper area and heatsinking per the SOT428 footprint guidelines.

Does PHD82NQ03LT,118 support logic-level gate drive?

Yes, PHD82NQ03LT,118 is explicitly designed as a logic-level MOSFET with V_GS(th) = 1.0–2.5 V at T_j = 25 °C and full enhancement achievable at V_GS = 4.5 V. It interfaces directly with 3.3 V and 5 V microcontrollers, PWM controllers, and gate drivers without requiring level-shifting or external boost circuitry.

What is the thermal resistance from junction to mounting base for PHD82NQ03LT,118?

The PHD82NQ03LT,118 has a typical thermal resistance R_th(j-mb) of 1.1 K/W from junction to mounting base. This value is measured under standard test conditions and reflects the device's ability to transfer heat efficiently to an external heatsink when the mounting base is properly soldered to a large copper area on the PCB.

Can PHD82NQ03LT,118 be used in synchronous rectification applications?

Yes, PHD82NQ03LT,118 is suitable for synchronous rectification due to its low R_DS(on) (≤8 mΩ), fast body diode with t_rr = 32 ns and Q_r = 24 nC, and logic-level gate drive. These characteristics enable efficient replacement of Schottky diodes in secondary-side rectification of DC-DC converters, reducing conduction loss and improving system efficiency.

What is the gate charge specification for PHD82NQ03LT,118?

The PHD82NQ03LT,118 has a total gate charge Q_g(tot) of 16.7 nC (typical) at V_DD = 15 V, I_D = 50 A, and V_GS = 5 V. Gate-source charge Q_gs is 8 nC and gate-drain (Miller) charge Q_gd is 5 nC - values critical for selecting appropriate gate driver strength and estimating switching losses.

PHD82NQ03LT,118 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 16.7 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

PHD82NQ03LT,118 FAQ

1.How can I place an order for PHD82NQ03LT,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHD82NQ03LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHD82NQ03LT,118 reliable?

The price and inventory of PHD82NQ03LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD82NQ03LT,118 is usually 5 days.

3.What payment methods are accepted for PHD82NQ03LT,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHD82NQ03LT,118 transactions.

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4.How is shipping managed for PHD82NQ03LT,118?

PHD82NQ03LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHD82NQ03LT,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHD82NQ03LT,118?

For technical support, including PHD82NQ03LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD82NQ03LT,118 requirements.

6.How does Aetrix verify that PHD82NQ03LT,118 is sourced from the original manufacturer or authorized distributors?

All PHD82NQ03LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD82NQ03LT,118 meets industry standards.

7.What is the process for return or replacement of PHD82NQ03LT,118?

All PHD82NQ03LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD82NQ03LT,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHD82NQ03LT,118 part is unused and in its original packaging.

Return procedure for PHD82NQ03LT,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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