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NXP Semiconductors PHD98N03LT,118
- Part No.:
- PHD98N03LT,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
PHD98N03LT,118.pdf
- Description:
- MOSFET N-CH 25V 75A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,404
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Product details
Overview
PHD98N03LT,118 from NXP Semiconductors is a logic-level N-channel TrenchMOS FET in DPAK (SOT428) package, designed for high-frequency DC-DC conversion with 75 A continuous drain current at 25 °C, 5.9 mΩ RDS(on) at VGS = 10 V, and 25 V VDS rating - deployed in computer motherboard power stages.
For engineers reviewing the PHD98N03LT,118 datasheet, PHD98N03LT,118 pinout, PHD98N03LT,118 application, or PHD98N03LT,118 equivalent, key selection criteria include low on-resistance under 5 V gate drive, avalanche energy rating of 183 mJ, thermal resistance to mounting base (1.35 K/W), fast switching (tr = 80 ns), and compatibility with logic-level controller outputs.
Technical Context
This device uses TrenchMOS technology to achieve low RDS(on) and fast switching while maintaining robust avalanche ruggedness (183 mJ unclamped). It operates with gate-source threshold voltage between 1.0 V and 2.0 V at 25 °C and supports logic-level drive down to 3 V.
The source-drain diode exhibits 0.9–1.2 V forward voltage at 25 A and 37 ns reverse recovery time, enabling synchronous rectification in buck converters. Thermal design centers on mounting-base conduction, with Rth(j-mb) = 1.35 K/W and no ambient-path dependency when properly heatsinked.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - Maximum drain-source blocking voltage; defines use in ≤24 V input systems like ATX VRMs. |
| RDS(on) | 5.9 mΩ max at VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 40 A, critical for high-efficiency CPU core rails. |
| ID | 75 A continuous at Tmb = 25 °C - Supports high-current phases in multi-phase motherboard DC-DC converters. |
| QGD | 15 nC typical - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency. |
| EDS(AL)S | 183 mJ - Non-repetitive avalanche energy rating ensures reliability during transient overvoltage events in inductive switching circuits. |
| tr/tf | 80 ns / 104 ns - Fast rise/fall times reduce switching losses in high-frequency (≥300 kHz) converter topologies. |
| VGS(th) | 1.0–2.0 V at 25 °C - Confirmed logic-level threshold enables direct drive from PWM controllers without level-shifting. |
Pinout & Package
PHD98N03LT,118 is housed in a plastic DPAK (SOT428) surface-mount package with three leads (one cropped), featuring an exposed mounting base electrically connected to the drain terminal for thermal and electrical integration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level input (VGS(th) ≤ 2.0 V); requires low-impedance drive due to QG(tot) = 40 nC. |
| 2 (D) | Drain | Main power output node; internally bonded to mounting base; carries full load current and must be thermally coupled to PCB copper or heatsink. |
| 3 (S) | Source | Power return path and reference for gate drive; connects to low-side switch node or ground plane in synchronous buck configurations. |
| Mounting Base (mb) | Drain (D) | Exposed metal pad tied directly to drain; primary thermal path - must be soldered to ≥100 mm² copper area for rated Ptot = 111 W. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 3 V, eliminating need for gate drivers in many 3.3 V/5 V control IC applications. |
| TrenchMOS architecture | Delivers 5.9 mΩ RDS(on) in DPAK - 25% lower than planar equivalents at same die size, improving power density. |
| Avalanche-rated | 183 mJ non-repetitive EAS allows safe operation during inductive turn-off transients without external snubbers. |
| Fast body diode | 37 ns trr and 20 nC Qr support synchronous rectification or freewheeling in high-frequency buck converters. |
| Thermal performance | Rth(j-mb) = 1.35 K/W enables >100 W dissipation with minimal temperature rise when mounted on adequate copper. |
Applications
| Computer Motherboard VRM | Server CPU Power Stage |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD CPUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in 300–1000 kHz phase-legs. Use Value: 5.9 mΩ RDS(on) reduces conduction loss by >30% vs. legacy 8 mΩ MOSFETs, improving VRM efficiency at 40–60 A per phase. |
Use Scenario: High-density 12 V input-to-core-voltage conversion in dual-socket server motherboards. IC Role / Device Role / Timing Role: High-current power switch in interleaved multiphase regulators with tight thermal constraints. Use Value: 1.35 K/W junction-to-mounting-base thermal resistance allows sustained 75 A operation with standard 2 oz copper heatsinking. |
| Industrial PLC Power Supply | Telecom DC-DC Module |
Use Scenario: Compact 24 V input DC-DC converter powering FPGA and microcontroller rails in programmable logic controllers. IC Role / Device Role / Timing Role: Primary switching element in half-bridge or synchronous buck topology operating at 500 kHz. Use Value: 15 nC QGD and 80 ns tr minimize switching loss and EMI generation in space-constrained industrial enclosures. |
Use Scenario: High-efficiency 48 V input isolated DC-DC brick delivering 3.3 V/12 V to baseband processing units. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC resonant converters. Use Value: 0.9–1.2 V VSD and 37 ns trr reduce body-diode conduction loss and improve light-load efficiency over Schottky alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 6.0 mΩ @ 10 V, but higher QG(tot) = 52 nC and no published avalanche rating. | Lacks EAS specification; less suitable for unclamped inductive switching in VRMs without snubbers. | Prefer PHD98N03LT,118 where avalanche ruggedness and lower gate charge are required for high-reliability computing power stages. |
| STL110N3LLH6 | Lower RDS(on) = 3.3 mΩ but requires 4.5 V min VGS; not fully logic-level at 3.3 V. | Needs gate driver for 3.3 V controllers; incompatible with some legacy VRM ICs lacking 5 V gate drive. | Select PHD98N03LT,118 when interfacing directly with 3.3 V PWM controllers or where proven avalanche margin is mandatory. |
Compared with IRL3803PBF and STL110N3LLH6, PHD98N03LT,118 uniquely balances logic-level operation (VGS(th) ≤ 2.0 V), low QGD, and certified 183 mJ avalanche capability - making it optimal for high-reliability, high-frequency motherboard and server power delivery where gate drive simplicity and transient robustness are jointly critical.
Availability
PHD98N03LT,118 is available at Aetrix Electronics and suitable for computer motherboard VRMs, server CPU power stages, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHD98N03LT,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions, automotive processors, and high-performance analog/power devices.
PHD98N03LT,118 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure where low gate-threshold, low RDS(on), and avalanche ruggedness are essential.
FAQ
What is the maximum continuous drain current for PHD98N03LT,118 at 100 °C mounting base temperature?
The PHD98N03LT,118 supports 66 A continuous drain current at Tmb = 100 °C and VGS = 5 V, as specified in Table 3 of the NXP datasheet. This derating reflects thermal limits of the DPAK package and ensures reliable operation in high-ambient environments such as densely packed server motherboards. The PHD98N03LT,118 maintains safe junction temperatures below 175 °C under these conditions when mounted on ≥100 mm² copper.
Does PHD98N03LT,118 have a documented avalanche energy rating?
Yes, PHD98N03LT,118 has a specified non-repetitive drain-source avalanche energy (EDS(AL)S) of 183 mJ under defined test conditions: unclamped inductive load, ID = 43 A, tp = 0.27 ms, VDS = 15 V, RGS = 50 Ω, VGS = 5 V, starting at Tj = 25 °C. This value is explicitly listed in Table 3 and confirms robustness against inductive turn-off transients in PHD98N03LT,118-based power stages.
What is the gate-source threshold voltage range for PHD98N03LT,118 at room temperature?
The gate-source threshold voltage (VGS(th)) for PHD98N03LT,118 is specified as 1.0 V minimum, 1.5 V typical, and 2.0 V maximum at Tj = 25 °C and ID = 1 mA. This confirmed logic-level range ensures full enhancement with standard 3.3 V or 5 V controller outputs, distinguishing PHD98N03LT,118 from standard-threshold MOSFETs requiring ≥10 V drive.
Can PHD98N03LT,118 be used as a synchronous rectifier in a buck converter?
Yes, PHD98N03LT,118 is suitable as a synchronous rectifier due to its fast body diode (trr = 37 ns, Qr = 20 nC) and low VSD (0.9–1.2 V at 25 A). Its logic-level gate drive allows direct control by standard PWM ICs, and its RDS(on) of 5.9 mΩ minimizes conduction loss. PHD98N03LT,118 is commonly deployed in this role in high-frequency motherboard VRMs.
What is the thermal resistance from junction to mounting base for PHD98N03LT,118?
The thermal resistance from junction to mounting base (Rth(j-mb)) for PHD98N03LT,118 is 1.35 K/W maximum, as stated in Table 4 of the NXP datasheet. This value assumes proper soldering of the mounting base to a thermally optimized PCB pad and forms the basis for calculating junction temperature rise in PHD98N03LT,118-based designs.
PHD98N03LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3000 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 111W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
PHD98N03LT,118 FAQ
1.How can I place an order for PHD98N03LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHD98N03LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHD98N03LT,118 reliable?
The price and inventory of PHD98N03LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD98N03LT,118 is usually 5 days.
3.What payment methods are accepted for PHD98N03LT,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHD98N03LT,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHD98N03LT,118?
PHD98N03LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHD98N03LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHD98N03LT,118?
For technical support, including PHD98N03LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD98N03LT,118 requirements.
6.How does Aetrix verify that PHD98N03LT,118 is sourced from the original manufacturer or authorized distributors?
All PHD98N03LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD98N03LT,118 meets industry standards.
7.What is the process for return or replacement of PHD98N03LT,118?
All PHD98N03LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD98N03LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHD98N03LT,118 part is unused and in its original packaging.
Return procedure for PHD98N03LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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