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Nexperia USA Inc. PHD9NQ20T,118
- Part No.:
- PHD9NQ20T,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
PHD9NQ20T,118.pdf
- Description:
- MOSFET N-CH 200V 8.7A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,630
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Product details
Overview
PHD9NQ20T,118 from Nexperia is a standard-level N-channel TrenchMOS FET in DPAK (SOT428) package, rated for 200 V drain-source voltage, 8.7 A continuous drain current at Tmb = 25 °C, and 300–400 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-efficiency power switch in off-line SMPS and DC-DC converters where thermal resistance to mounting base (1.7 K/W) and fast switching (tr = 19 ns, QGD = 12 nC) are critical.
For engineers reviewing the PHD9NQ20T,118 datasheet, PHD9NQ20T,118 pinout, PHD9NQ20T,118 application, or PHD9NQ20T,118 equivalent, key selection criteria include verified avalanche ruggedness (93 mJ unclamped), gate threshold voltage range (2–4 V at 25 °C), source-drain diode forward voltage (0.85–1.2 V), and thermal derating behavior above 25 °C mounting base temperature.
Technical Context
This device uses TrenchMOS technology to achieve low RDS(on) and high power density in a surface-mount DPAK package with drain-connected mounting base. Its static characteristics include V(BR)DSS ≥ 200 V at 25 °C and VGS(th) = 2–4 V, enabling robust gate drive compatibility with 5 V and 10 V logic systems.
Dynamic performance is optimized for high-frequency switching: Ciss = 959 pF, Coss = 93 pF, and Crss = 54 pF at VDS = 25 V; turn-on delay td(on) = 8 ns and fall time tf = 15 ns under standard test conditions (VDS = 100 V, RG(ext) = 5.6 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Maximum blocking voltage before breakdown; supports 170 V AC line-derived off-line topologies with safety margin. |
| ID (continuous) | 8.7 A at Tmb = 25 °C - Continuous current capability when mounted on heatsink or copper plane; derates to 6.2 A at Tmb = 100 °C. |
| RDS(on) | 300–400 mΩ at VGS = 10 V, ID = 4.5 A, Tj = 25 °C - Directly determines conduction loss (Pcond ≈ I² × RDS(on)) in hard-switched applications. |
| QGD | 12 nC - Gate-drain charge governs Miller plateau duration and switching loss during voltage transition; enables <100 kHz operation with low gate drive power. |
| Rth(j-mb) | 1.7 K/W - Thermal resistance from junction to mounting base; defines minimum heatsink requirement for 88 W Ptot dissipation at Tmb = 25 °C. |
| VSD | 0.85–1.2 V at IS = 9 A, Tj = 25 °C - Forward voltage of integrated body diode; impacts reverse recovery loss and freewheeling efficiency in synchronous rectification. |
Pinout & Package
PHD9NQ20T,118 is housed in a plastic DPAK (SOT428) package with three leads and an exposed mounting base electrically connected to the drain terminal. The package features a single cropped lead and is designed for surface-mount assembly with thermal via support on PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control electrode; requires 2–4 V threshold to initiate conduction; driven by 10 V for full enhancement and minimal RDS(on). |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for direct thermal path; not externally accessible per datasheet note [1]. |
| 3 (S) | Source | Power return node and reference for gate drive; forms common node with gate driver ground in low-side configurations. |
| Mounting base (mb) | Drain (electrically tied) | Primary thermal interface; must be soldered to large copper area or heatsink; contributes >90% of total heat removal in typical layout. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 300–400 mΩ at 10 V gate drive enables <0.32 W conduction loss at 3.3 A RMS in 12 V output DC-DC stages. |
| TrenchMOS architecture | Delivers higher cell density and lower gate charge than planar MOSFETs, reducing switching losses in 50–200 kHz SMPS designs. |
| Avalanche ruggedness | 93 mJ non-repetitive energy rating allows safe operation under inductive switching stress without external snubbers in motor control and flyback circuits. |
| Fast switching | 19 ns rise time and 15 ns fall time minimize overlap loss in hard-switched topologies, supporting efficient operation up to 200 kHz. |
Applications
| Off-line Switched-Mode Power Supplies | DC-DC Converters |
|---|---|
|
Use Scenario: Primary-side switch in 20–100 W universal-input (85–265 V AC) flyback or forward converters for consumer adapters and industrial power modules. IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–130 kHz; handles peak drain voltage up to 1.4× input + reflected output voltage. Use Value: 200 V rating and 93 mJ avalanche energy ensure reliable operation during line surges and transformer leakage spikes without clamping circuitry. |
Use Scenario: Synchronous rectifier or high-side switch in isolated or non-isolated buck/boost converters for telecom and computing power rails (3.3 V, 5 V, 12 V). IC Role / Device Role / Timing Role: Low-loss power stage element; conducts during PWM on-time (buck high-side) or freewheels via body diode (low-side synchronous rectifier). Use Value: 300–400 mΩ RDS(on) reduces conduction loss below 0.5 W at 3.5 A load, while 0.85–1.2 V VSD limits reverse recovery charge (Qr = 0.5 µC) in discontinuous conduction mode. |
| Motor Control Circuits | General Purpose Switching |
|
Use Scenario: Half-bridge leg in 24–48 V brushed DC motor drivers for industrial actuators and HVAC blowers. IC Role / Device Role / Timing Role: Low-side switching element commutating motor current; subjected to inductive kickback and bidirectional current flow during PWM decay. Use Value: Integrated body diode with 92 ns trr and 0.5 µC Qr enables efficient freewheeling; avalanche rating absorbs stored inductive energy without failure. |
Use Scenario: Solid-state relay replacement or load switch in programmable logic controllers (PLCs), lighting ballasts, and appliance control boards. IC Role / Device Role / Timing Role: On/off power controller interfacing microcontroller GPIO; switched at ≤10 Hz with minimal thermal cycling stress. Use Value: 8.7 A continuous rating and 35 A pulsed current (IDM) support resistive loads up to 1 kW at 200 V; low gate charge simplifies drive with 5 V logic buffers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK20ZFP | Zener-protected superjunction MOSFET; 200 V, 9 A, RDS(on) = 320 mΩ, but higher QGD = 18 nC and no specified avalanche energy. | Lacks documented avalanche ruggedness; requires external clamping in inductive switching; better suited for low-noise linear regulation than high-dI/dt motor drives. | Select when ESD robustness and Zener gate protection are prioritized over unclamped inductive switching reliability. |
| IRF640NPBF | Planar MOSFET; 200 V, 18 A, RDS(on) = 180 mΩ, but Rth(j-mb) = 2.5 K/W and no avalanche rating published. | Higher conduction loss at same current due to larger die size and inferior thermal path; unsuitable for compact layouts requiring <2 K/W thermal resistance. | Choose only if higher current headroom is needed and board space allows larger heatsinking; avoid in thermally constrained or avalanche-prone designs. |
Compared with STP9NK20ZFP and IRF640NPBF, PHD9NQ20T,118 offers superior thermal performance (1.7 K/W vs. ≥2.5 K/W), verified 93 mJ avalanche energy for inductive reliability, and lower QGD for reduced switching loss-making it optimal for compact, high-reliability 200 V SMPS and motor control.
Availability
PHD9NQ20T,118 is available at Aetrix Electronics and suitable for off-line switched-mode power supplies, DC-DC converters, and motor control circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for PHD9NQ20T,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.
PHD9NQ20T,118 belongs to Nexperia's standard-level TrenchMOS power MOSFET product line, engineered for cost-sensitive yet thermally demanding computing, communications, and industrial power conversion applications-not automotive or safety-critical use.
FAQ
Is PHD9NQ20T,118 suitable for automotive applications?
No. PHD9NQ20T,118 is explicitly qualified only for computing, communications, consumer, and industrial applications. It is not AEC-Q101 qualified, lacks automotive-grade screening, and carries no warranty for use in safety-critical or life-support systems per Nexperia's legal disclaimers.
What is the maximum gate-source voltage rating?
The absolute maximum VGS is ±30 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement; gate drive circuits must include clamping (e.g., Zener diode) to prevent overshoot exceeding 30 V during switching transients.
How is thermal performance affected by PCB layout?
Thermal resistance Rth(j-mb) = 1.7 K/W assumes full-solder coverage of the mounting base to ≥10 cm² of 2 oz copper with ≥6 thermal vias. Reducing copper area or omitting vias increases effective Rth, causing junction temperature to exceed 175 °C at lower power levels-derating is mandatory per Figure 1 in the datasheet.
Does PHD9NQ20T,118 have a built-in body diode?
Yes. As an N-channel MOSFET, it includes an intrinsic parasitic body diode between source and drain. This diode has VSD = 0.85–1.2 V at 9 A and trr = 92 ns, enabling freewheeling in inductive loads-but its recovery characteristics require careful layout to minimize ringing and EMI in high-dI/dt applications.
PHD9NQ20T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 959 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
PHD9NQ20T,118 FAQ
1.How can I place an order for PHD9NQ20T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHD9NQ20T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHD9NQ20T,118 reliable?
The price and inventory of PHD9NQ20T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHD9NQ20T,118 is usually 5 days.
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Once your PHD9NQ20T,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHD9NQ20T,118?
For technical support, including PHD9NQ20T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHD9NQ20T,118 requirements.
6.How does Aetrix verify that PHD9NQ20T,118 is sourced from the original manufacturer or authorized distributors?
All PHD9NQ20T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHD9NQ20T,118 meets industry standards.
7.What is the process for return or replacement of PHD9NQ20T,118?
All PHD9NQ20T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHD9NQ20T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHD9NQ20T,118 part is unused and in its original packaging.
Return procedure for PHD9NQ20T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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