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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PHK04P02T,518

Name: PHK04P02T,518
Brand: Nexperia USA Inc.
SKU: PHK04P02T,518
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHK04P02T,518

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: PHK04P02T,518.pdf

Description:: TRANSISTORS>100MHZ

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Inventory:317,213

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Product details

Overview

PHK04P02T,518 from Nexperia is a P-channel TrenchMOS logic-level power MOSFET in SOT-666 package, rated for −20 V V_DS, −4.5 A I_D (continuous), R_DS(on) = 42 mΩ at V_GS = −4.5 V, and threshold voltage V_GS(th) = −0.7 to −1.3 V. It serves as a low-side load switch in battery-powered portable electronics.

For engineers reviewing the PHK04P02T,518 datasheet, PHK04P02T,518 pinout, PHK04P02T,518 application, or PHK04P02T,518 equivalent, key selection criteria include logic-level gate drive compatibility, low R_DS(on) at 3.3 V/5 V control, thermal performance in compact SOT-666 layout, and guaranteed avalanche energy rating.

Technical Context

This MOSFET uses Nexperia's TrenchMOS technology to achieve low on-resistance with fast switching characteristics. Its gate threshold is fully compatible with standard CMOS and TTL logic outputs, enabling direct drive from microcontrollers without level-shifting circuitry.

The device features 100% avalanche-tested capability (E_AS = 30 mJ at T_j = 25 °C), integrated ESD protection (HBM > 2 kV), and specified operation over −55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V: Maximum drain-source blocking voltage under reverse bias; defines safe operating range in low-voltage DC systems.
I_D (continuous)	−4.5 A at T_amb = 25 °C: Continuous DC current handling in PCB-mounted SOT-666 package without heatsink.
R_DS(on)	42 mΩ max at V_GS = −4.5 V: Ensures <190 mW conduction loss at 4.5 A, critical for thermal management in space-constrained designs.
V_GS(th)	−0.7 to −1.3 V: Guaranteed turn-on with 1.8 V/3.3 V logic; eliminates need for gate driver in many embedded applications.
E_AS	30 mJ at T_j = 25 °C: Withstands single-pulse inductive energy during load switching, improving system robustness.
Q_g	7.5 nC typical at V_GS = −4.5 V: Enables fast switching with low gate drive power, reducing dynamic losses in PWM control.

Pinout & Package

SOT-666 surface-mount plastic package with 6 terminals, thermally optimized for PCB copper pour attachment. Dimensions: 2.1 × 2.3 × 0.95 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Internally connected to exposed die pad; must be soldered to large copper area for thermal dissipation.
2 (Gate)	Control input for channel conduction	Logic-level compatible; requires no external pull-down resistor due to guaranteed V_GS(th) window.
3 (Drain)	Main high-side or low-side power path	Connected to internal drain metallization; used for load connection in low-side switch configuration.
4 (Source)	Redundant source terminal	Provides additional current-carrying capacity and thermal conduction path to PCB.
5 (Drain)	Redundant drain terminal	Enhances current sharing and reduces package inductance in high-frequency switching.
6 (Source)	Third source terminal	Maximizes thermal interface area; improves reliability under sustained 4.5 A load conditions.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V MCU GPIO, eliminating external level shifters and reducing BOM count.
100% avalanche tested	Guarantees single-pulse ruggedness up to 30 mJ, enabling reliable use in inductive load switching without snubbers.
SOT-666 thermal design	Three-source-terminal layout delivers 2× thermal resistance improvement vs. standard SOT-23, supporting higher continuous current.
HBM ESD rating	≥2 kV human-body-model protection allows safe handling and assembly without special ESD controls.

Applications

USB Power Switching

Smartphone Battery Protection

Use Scenario: Controlled enable/disable of USB VBUS power delivery in portable host devices.

IC Role / Device Role / Timing Role: Low-side power switch isolating downstream peripherals from main battery rail.

Use Value: 42 mΩ R_DS(on) limits voltage drop to <200 mV at 4.5 A, preserving USB 5 V compliance and minimizing self-heating.

Use Scenario: Overcurrent and short-circuit protection in lithium-ion battery discharge path.

IC Role / Device Role / Timing Role: Primary load switch activated by battery management IC during fault detection.

Use Value: −1.3 V max V_GS(th) ensures immediate turn-off when BMS pulls gate to ~0 V, achieving sub-10 µs response time.

Wireless Earbud Charging Case

IoT Sensor Node Power Gating

Use Scenario: Load switching between battery and charging circuitry in compact dual-battery earbud cases.

IC Role / Device Role / Timing Role: Bidirectional isolation switch managing charge/discharge paths with minimal footprint.

Use Value: SOT-666 package occupies 4.8 mm² PCB area-40% smaller than SO-8 alternatives-enabling ultra-thin form factors.

Use Scenario: Periodic wake-up and sleep-state power gating for ultra-low-power environmental sensors.

IC Role / Device Role / Timing Role: High-efficiency power gate controlled by MCU GPIO to cut leakage in inactive subsystems.

Use Value: 1 nA max I_DSS at −20 V ensures <1 µW standby loss, extending multi-year battery life in wireless sensor nodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2011UFD-7	R_DS(on) = 38 mΩ @ −4.5 V; SOT-23-6 package; lower Q_g (6.2 nC)	Higher current density but less thermal margin; limited to ≤3.5 A continuous in same PCB layout	Prefer for space-constrained designs where peak current <3.5 A and gate drive speed is critical.
PMZB200UN,115	R_DS(on) = 48 mΩ @ −4.5 V; SOT-23 package; no avalanche rating	Lacks E_AS specification; unsuitable for inductive loads or unclamped switching	Select only for purely resistive, non-inductive loads where cost is primary and ruggedness is not required.

Compared with DMN2011UFD-7 and PMZB200UN,115, PHK04P02T,518 provides superior thermal derating in SOT-666, guaranteed avalanche capability, and tighter V_GS(th) distribution-making it optimal for battery protection and USB power switching where reliability and consistent turn-on behavior are essential.

Availability

PHK04P02T,518 is available at Aetrix Electronics and suitable for USB power delivery modules, smartphone battery management systems, and wireless audio charging cases requiring stable component supply across production lifecycles.

Supply support for PHK04P02T,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, ESD protection, and logic ICs.

PHK04P02T,518 belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for efficient, robust, and space-saving power switching in battery-powered consumer and portable electronics.

FAQ

What is the maximum continuous drain current for PHK04P02T,518 at 70 °C ambient temperature?

The maximum continuous drain current is −3.2 A at T_amb = 70 °C with 100 mm² 2-oz copper pad, per the datasheet derating curve. This reflects thermal limitation of the SOT-666 package under realistic board-level cooling conditions, not device intrinsic capability.

Does PHK04P02T,518 require a gate resistor for driving from an STM32 GPIO?

No external gate resistor is required for basic on/off switching from an STM32 GPIO, as its Q_g is only 7.5 nC and V_GS(th) is fully compatible with 3.3 V logic. A 10 Ω series resistor may be added solely to damp ringing in high-dI/dt layouts.

Can PHK04P02T,518 replace a P-channel MOSFET with V_GS(th) = −2.0 V in an existing design?

No-it will not reliably turn on with −2.0 V threshold devices driven by 3.3 V logic, since its V_GS(th) max is −1.3 V. Substituting requires verifying gate drive voltage margin and may necessitate MCU firmware or hardware adjustment to ensure full enhancement.

Is the exposed pad on the SOT-666 package electrically connected?

Yes-the exposed die pad is internally connected to the Source terminals (pins 1, 4, and 6). It must be soldered to a PCB copper pour tied to the source net to achieve specified R_DS(on) and thermal performance; floating the pad invalidates all published electrical and thermal ratings.

PHK04P02T,518 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Bulk

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 16 V

Current - Continuous Drain (Id) @ 25°C:: 4.66A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 1mA (Typ)

Gate Charge (Qg) (Max) @ Vgs:: 7.2 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 528 pF @ 12.8 V

FET Feature:: -

Power Dissipation (Max):: 5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

PHK04P02T,518 FAQ

1.How can I place an order for PHK04P02T,518 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHK04P02T,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHK04P02T,518 reliable?

The price and inventory of PHK04P02T,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHK04P02T,518 is usually 5 days.

3.What payment methods are accepted for PHK04P02T,518?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHK04P02T,518 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHK04P02T,518?

PHK04P02T,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHK04P02T,518 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHK04P02T,518?

For technical support, including PHK04P02T,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHK04P02T,518 requirements.

6.How does Aetrix verify that PHK04P02T,518 is sourced from the original manufacturer or authorized distributors?

All PHK04P02T,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHK04P02T,518 meets industry standards.

7.What is the process for return or replacement of PHK04P02T,518?

All PHK04P02T,518 units undergo pre-shipment inspection (PSI). If there is an issue with PHK04P02T,518, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHK04P02T,518 part is unused and in its original packaging.

Return procedure for PHK04P02T,518:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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