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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PHK12NQ03LT,518

Name: PHK12NQ03LT,518
Brand: Nexperia USA Inc.
SKU: PHK12NQ03LT,518
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHK12NQ03LT,518

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: PHK12NQ03LT,518.pdf

Description:: MOSFET N-CH 30V 11.8A 8SO

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Product details

Overview

PHK12NQ03LT from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ logic-level power MOSFET in SO8 (SOT96-1) package, rated for 30 V V_DS, 11.8 A continuous drain current, and 14 mΩ R_DS(on) at V_GS = 4.5 V. It delivers fast switching (t_r = 11.7 ns), low gate charge (Q_g(tot) = 17.6 nC), and avalanche ruggedness (440 mJ), targeting high-efficiency DC-DC converters in portable electronics.

For engineers reviewing the PHK12NQ03LT datasheet, PHK12NQ03LT pinout, PHK12NQ03LT application, or PHK12NQ03LT equivalent, this device is selected for logic-level gate drive compatibility (V_GS(th) = 1–2 V), thermally constrained PCB layouts (R_th(j-a) = 50 K/W), and synchronous rectification where low R_DS(on) and fast body diode recovery (t_rr = 70 ns) are critical.

Technical Context

This MOSFET uses TrenchMOS™ technology to achieve enhanced channel density and reduced specific on-resistance. Its logic-level threshold (V_GS(th) = 1–2 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The SO8 package integrates three parallel source pins and four parallel drain pins to minimize parasitic inductance and improve current sharing. The device exhibits stable R_DS(on) over temperature (a = 1.0 at 150 °C) and supports unclamped inductive switching with E_DS(AL)S = 440 mJ at I_D = 7.7 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient surges up to ±20 %.
I_D (continuous)	11.8 A at T_amb = 25 °C - Supports compact buck converter designs delivering >20 W output with minimal heatsinking.
R_DS(on)	11 mΩ typical at V_GS = 4.5 V - Enables <150 mW conduction loss at 10 A, reducing thermal load in space-constrained portable systems.
Q_g(tot)	17.6 nC - Low gate charge allows efficient 1–2 MHz switching with standard gate drivers, minimizing driver power loss.
t_rr	70 ns - Fast reverse recovery of integrated body diode reduces shoot-through risk and improves efficiency in synchronous rectification.
E_DS(AL)S	440 mJ - Avalanche energy rating supports robust operation under inductive load transients without external snubbers.
R_th(j-a)	50 K/W - Thermal resistance measured on minimum footprint PCB; defines maximum power dissipation before junction overheating.

Pinout & Package

PHK12NQ03LT is housed in an SO8 plastic small outline package (SOT96-1), 4.8 mm × 6.2 mm × 1.75 mm, with gull-wing leads and 1.27 mm pitch. The package provides dual-side thermal relief via exposed drain pads and supports automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input optimized for logic-level drive; gate-source leakage ≤100 nA ensures low standby current.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals maximize current capacity and minimize package inductance for switching node integrity.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1–2 V enables direct interface with 3.3 V/5 V MCUs and avoids external level shifters.
Low R_DS(on) at 4.5 V	11 mΩ typical ensures <120 mW conduction loss at 10 A, critical for battery-powered thermal budgets.
Fast switching performance	t_r = 11.7 ns and t_f = 19 ns support high-frequency (>1 MHz) DC-DC topologies with minimal switching loss.
Avalanche-rated operation	440 mJ non-repetitive energy rating allows safe handling of inductive turn-off transients without clamping circuits.
Thermally enhanced SO8	Multi-pin drain/source configuration improves heat spreading and reduces thermal resistance by ~15 % vs. standard SO8.

Applications

Portable DC-DC Converters

USB Power Delivery Modules

Use Scenario: Step-down conversion in smartphones and tablets with 3.3 V/5 V rail generation from single-cell Li-ion (2.7–4.2 V).

IC Role / Device Role / Timing Role: Synchronous rectifier switch in buck converter, operating at 1–2 MHz with logic-level gate control.

Use Value: 11 mΩ R_DS(on) at 4.5 V reduces conduction loss by 35 % vs. comparable 20 mΩ devices, extending battery runtime.

Use Scenario: Secondary-side synchronous rectification in USB PD 3.0 compliant 20 V/3 A adapters.

IC Role / Device Role / Timing Role: High-side switch in isolated flyback secondary, driven by dedicated gate driver IC.

Use Value: 70 ns t_rr minimizes body diode conduction time, reducing reverse recovery loss by >40 % versus standard MOSFETs.

LED Backlight Drivers

Power Bank Load Switches

Use Scenario: PWM-controlled current sink for multi-string LCD backlighting in automotive infotainment displays.

IC Role / Device Role / Timing Role: Low-side current control switch, modulated at 200–500 kHz with precise duty cycle.

Use Value: Stable R_DS(on) across −40 to +125 °C ensures consistent LED current regulation without thermal drift compensation.

Use Scenario: Input protection and load switching in 20,000 mAh portable power banks with dual USB-A/C outputs.

IC Role / Device Role / Timing Role: Main power path switch enabling/disabling output rails during charging or discharge cycles.

Use Value: 11.8 A continuous rating supports 3 A per port at 5 V with 20 % margin, while SO8 footprint simplifies layout routing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 22 mΩ @ 4.5 V; smaller SOT-23 package; lower I_D = 4.3 A	Suitable only for sub-5 W loads; limited thermal mass for sustained 3 A operation	Select when board space is critical and peak current ≤4 A; avoid for >10 W DC-DC stages.
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 4.5 V; SO-8 package; higher Q_g = 25 nC; V_GS(th) = 1.2–2.2 V	Better conduction loss but slower switching; requires stronger gate driver for 1 MHz+ operation	Prefer for high-current, lower-frequency (<500 kHz) applications where R_DS(on) dominates efficiency.

Compared with IRLML6344TRPBF and DMN3025LSD-13, PHK12NQ03LT offers optimal balance: mid-range R_DS(on) (11 mΩ), low Q_g (17.6 nC), and proven avalanche ruggedness-making it ideal for 10–25 W portable DC-DC converters requiring reliability at moderate cost.

Availability

PHK12NQ03LT is available at Aetrix Electronics and suitable for portable DC-DC converters, USB power delivery modules, and LED backlight drivers requiring stable component supply and long-term industrial availability.

Supply support for PHK12NQ03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and consumer applications, with roots in Philips Semiconductors' power management legacy.

PHK12NQ03LT belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion in battery-powered electronics.

FAQ

Is PHK12NQ03LT suitable for 3.3 V microcontroller gate drive?

Yes. With a gate threshold voltage of 1–2 V and guaranteed turn-on at V_GS = 4.5 V, PHK12NQ03LT fully enhances using standard 3.3 V GPIO outputs. Its low gate charge (17.6 nC) ensures fast switching even with weak MCU drivers, and the SO8 package provides sufficient gate drive loop area for noise immunity.

What is the maximum continuous drain current at 70 °C ambient?

At T_amb = 70 °C, the normalized derating curve (Figure 2) shows ~75 % of rated I_D. Thus, maximum continuous drain current is approximately 8.8 A (11.8 A × 0.75), assuming standard PCB mounting with minimum copper footprint and no forced airflow.

Does PHK12NQ03LT include an integrated body diode? What are its characteristics?

Yes, it features an integrated source-drain body diode with forward voltage V_SD = 0.7–1.0 V at I_S = 1 A and reverse recovery time t_rr = 70 ns. This enables synchronous rectification without external diodes, and the fast recovery minimizes switching losses in high-frequency buck converters.

Can PHK12NQ03LT replace older Philips MOSFETs like BUK9215-55B?

No. BUK9215-55B is a 55 V, TO-220 packaged MOSFET with different voltage rating, package, and thermal profile. PHK12NQ03LT is a 30 V, SO8 logic-level device intended for low-voltage, high-density applications-not a drop-in replacement. Voltage, package, and R_DS(on) profiles are not interchangeable.

PHK12NQ03LT,518 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11.8A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17.6 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1335 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

PHK12NQ03LT,518 FAQ

1.How can I place an order for PHK12NQ03LT,518 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHK12NQ03LT,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHK12NQ03LT,518 reliable?

The price and inventory of PHK12NQ03LT,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHK12NQ03LT,518 is usually 5 days.

3.What payment methods are accepted for PHK12NQ03LT,518?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHK12NQ03LT,518 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHK12NQ03LT,518?

PHK12NQ03LT,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHK12NQ03LT,518 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHK12NQ03LT,518?

For technical support, including PHK12NQ03LT,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHK12NQ03LT,518 requirements.

6.How does Aetrix verify that PHK12NQ03LT,518 is sourced from the original manufacturer or authorized distributors?

All PHK12NQ03LT,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHK12NQ03LT,518 meets industry standards.

7.What is the process for return or replacement of PHK12NQ03LT,518?

All PHK12NQ03LT,518 units undergo pre-shipment inspection (PSI). If there is an issue with PHK12NQ03LT,518, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHK12NQ03LT,518 part is unused and in its original packaging.

Return procedure for PHK12NQ03LT,518:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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