NXP Semiconductors PHK12NQ10T,518

Overview

PHK12NQ10T,518 from NXP Semiconductors is a standard-level N-channel TrenchMOS FET in SO8 (SOT96-1) package, designed for primary-side switching in DC-to-DC converters and portable equipment power stages. It delivers 11.6 A continuous drain current at V_GS = 10 V and 25 °C, features 23.7 mΩ typical R_DS(on), supports 100 V V_DS, and operates up to 150 °C junction temperature.

For engineers reviewing the PHK12NQ10T,518 datasheet, PHK12NQ10T,518 pinout, PHK12NQ10T,518 application, or PHK12NQ10T,518 equivalent, key selection criteria include its low on-resistance for reduced conduction loss, avalanche ruggedness (65 mJ), gate charge profile (35 nC total), and SO8 thermal performance (R_th(j-sp) = 15 K/W).

Technical Context

This N-channel enhancement-mode MOSFET uses TrenchMOS technology to achieve low R_DS(on) and fast switching with 23 ns turn-on delay and 11 ns fall time. Its gate threshold voltage ranges from 2.0–4.0 V at 25 °C, enabling reliable drive from standard logic-level controllers.

The device integrates an intrinsic source-drain diode with 0.83 V forward voltage at 12 A and 86 ns reverse recovery time, supporting synchronous rectification and flyback topologies. Avalanche energy rating of 65 mJ ensures robustness under unclamped inductive switching conditions.

Key Specifications

Pinout & Package

PHK12NQ10T,518 is housed in an SO8 plastic small outline package (SOT96-1), 3.9 mm body width, with exposed drain pads for enhanced thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IPB120N10N3 G and IRF540NPBF, PHK12NQ10T,518 offers optimal balance of SO8 compactness, 23.7 mΩ R_DS(on), and 15 K/W thermal resistance-enabling high-density, thermally efficient designs where board space and thermal management are constrained.

Availability

PHK12NQ10T,518 is available at Aetrix Electronics and suitable for DC-DC primary switching, portable equipment power stages, and industrial SMPS requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PHK12NQ10T,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

The PHK12NQ10T,518 belongs to NXP's TrenchMOS standard-level power MOSFET family, engineered for high-efficiency, space-constrained switching applications in computing, communications, and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for PHK12NQ10T,518 at 25 °C?

The PHK12NQ10T,518 supports 11.6 A continuous drain current at T_sp = 25 °C and V_GS = 10 V, as specified in Table 1 and Table 4 of the NXP datasheet. This rating assumes adequate PCB copper area for thermal dissipation and decreases linearly with rising solder point temperature per Figure 1.

Does PHK12NQ10T,518 have avalanche capability, and what is its rated energy?

Yes, PHK12NQ10T,518 is rated for non-repetitive drain-source avalanche energy of 65 mJ under defined test conditions (V_GS = 10 V, T_j(init) = 25 °C, I_D = 11.5 A, V_sup ≤ 100 V, unclamped, t_p = 0.1 ms). This specification confirms its suitability for inductive switching applications where voltage overshoot may occur.

What is the gate threshold voltage range for PHK12NQ10T,518 across temperature?

The PHK12NQ10T,518 exhibits a gate-source threshold voltage (V_GS(th)) of 2.0–4.0 V at 25 °C, narrowing to 1.2–4.4 V across the full junction temperature range (−55 °C to 150 °C), per Table 6. This ensures predictable turn-on behavior with standard 3.3 V or 5 V gate drivers across operating conditions.

How many drain and source pins does PHK12NQ10T,518 have, and why is this configuration used?

The PHK12NQ10T,518 has four drain pins (5–8) and three source pins (1–3), as confirmed in Table 2. This multi-pin configuration reduces current density per bond wire and lowers package inductance-critical for minimizing switching losses and voltage ringing in high-frequency DC-DC converters.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PHK12NQ10T,518?

The PHK12NQ10T,518 has a maximum thermal resistance of 15 K/W from junction to solder point (R_th(j-sp)), per Table 5. This value reflects direct heat transfer through the package bottom to PCB copper, enabling efficient thermal management without external heatsinks in most medium-power applications.