Nexperia USA Inc. PHK13N03LT,518
- Part No.:
- PHK13N03LT,518
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
PHK13N03LT,518.pdf
- Description:
- MOSFET N-CH 30V 13.8A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:8,447
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Product details
Overview
PHK13N03LT from Nexperia is a logic-level N-channel TrenchMOS FET in SO8 (SOT96-1) package, rated for 30 V VDS, 13.8 A continuous drain current at Tsp = 25 °C, and 17–20 mΩ RDS(on) at VGS = 10 V / ID = 8 A / Tj = 25 °C. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and lithium-ion battery protection circuits.
For engineers reviewing the PHK13N03LT datasheet, PHK13N03LT pinout, PHK13N03LT application, or PHK13N03LT equivalent, this device is selected for low gate charge (10.7 nC), fast switching (td(off) = 23 ns), and logic-compatible 4.5 V gate drive-critical for compact portable power designs requiring minimal drive complexity and thermal margin.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low RDS(on) and reduced gate charge versus planar alternatives. Its 30 V VDS rating and 55 A peak drain current support robust operation in 12–24 V input DC-DC stages with transient overloads.
The device features an integrated body diode with 0.86–1.1 V forward voltage at 7 A and 25 ns reverse recovery time, enabling efficient freewheeling in synchronous buck topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; supports 24 V nominal bus systems with 25 % safety margin. |
| ID (continuous) | 13.8 A at Tsp = 25 °C - Sustains full-load current in notebook CPU VRMs or USB PD sink switches without forced airflow. |
| RDS(on) | 17–20 mΩ at VGS = 10 V / ID = 8 A / Tj = 25 °C - Enables ≤1.3 W conduction loss at 8 A, reducing thermal design burden. |
| QG(tot) | 10.7 nC - Low gate charge allows direct drive from 3.3 V/5 V microcontrollers without buffer stages. |
| td(off) | 23 ns - Supports >1 MHz switching in high-frequency DC-DC converters while maintaining dead-time control integrity. |
| VGS(th) | 1.0–2.2 V - Guaranteed turn-on with 2.5 V logic; compatible with Li-ion battery voltage range (2.5–4.2 V). |
| Rth(j-sp) | 20 K/W - Junction-to-solder-point thermal resistance enables 3.1 W dissipation at 62.5 °C ΔT above PCB solder point. |
Pinout & Package
PHK13N03LT is housed in an SO8 plastic small outline package (SOT96-1), 3.9 mm body width, with exposed drain pad for enhanced thermal performance. The package supports standard reflow profiles and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Common source connection; internally bonded to all three pins for low-inductance return path in high-di/dt applications. |
| 4 | Gate (G) | Control terminal; accepts logic-level drive (≥2.5 V); gate capacitance optimized for fast edge rates with minimal ringing. |
| 5, 6, 7, 8 | Drain (D) | High-current output node; pins 5–8 are internally paralleled and connected to exposed copper pad for thermal and current sharing. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate threshold | VGS(th) = 1.0–2.2 V ensures reliable turn-on from 3.3 V microcontrollers and battery-powered gate drivers. |
| Low RDS(on) at 4.5 V | 21–26 mΩ at VGS = 4.5 V / ID = 7 A enables use in 5 V-input buck converters without gate boosting. |
| Fast switching with low QGD | QGD = 3.9 nC minimizes Miller plateau duration, improving efficiency and EMI in hard-switched topologies. |
| Integrated body diode | VSD = 0.86–1.1 V at 7 A / Tj = 25 °C provides low-loss freewheeling in synchronous rectification. |
Applications
| DC-DC Converters | Lithium-ion Battery Protection |
|---|---|
Use Scenario: Synchronous rectifier in 12 V input → 1.2 V/20 A CPU VRM for notebook platforms. IC Role / Device Role / Timing Role: Low-side switch operating at 500 kHz–1 MHz with precise dead-time control. Use Value: 17 mΩ RDS(on) reduces conduction loss by 40 % vs. comparable 25 mΩ devices, lowering junction temperature rise by ~12 °C at full load. |
Use Scenario: Charge/discharge path switch in single-cell Li-ion pack with overcurrent cutoff. IC Role / Device Role / Timing Role: Bidirectional load switch controlled by battery management IC (e.g., BQ297xx). Use Value: 2.2 V max VGS(th) guarantees turn-off during deep discharge (≤2.5 V cell voltage), preventing uncontrolled discharge. |
| Notebook Computers | Portable Equipment |
Use Scenario: Main system power switch enabling instant-on functionality and deep sleep state isolation. IC Role / Device Role / Timing Role: High-side or low-side power OR-ing switch controlled by EC firmware. Use Value: 13.8 A continuous rating supports 65 W adapter input; low QG enables <10 µs turn-on for rapid wake-up response. |
Use Scenario: Load switch for USB-C port power delivery negotiation and VBUS enable. IC Role / Device Role / Timing Role: Controlled power gate between USB PD controller and downstream power rail. Use Value: 30 V VDS withstands 20 V PPS bursts; 55 A peak current handles 5 A @ 20 V short-circuit events per USB PD 3.1 spec. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(on) = 22 mΩ @ 4.5 V; SO-8 package; higher QG = 12.5 nC; lower ID = 4.3 A | Lower current capability limits use to sub-10 W loads; unsuitable for 13.8 A DC-DC outputs. | Select only for space-constrained <5 W applications where gate drive margin exceeds 10.7 nC requirement. |
| DMN3025LFG-7 | RDS(on) = 25 mΩ @ 4.5 V; same SO-8 footprint; higher VGS(th) = 1.2–2.4 V; QG = 11.5 nC | Slightly higher threshold increases risk of partial turn-on near battery end-of-discharge (2.8 V). | Acceptable for industrial portable gear with regulated 3.3 V gate supply; avoid in direct Li-ion gate drive. |
Compared with IRLML6344TRPBF and DMN3025LFG-7, PHK13N03LT delivers superior current handling (13.8 A vs. ≤4.3 A), tighter VGS(th) distribution (0.5–2.2 V), and lower RDS(on) at 4.5 V-making it uniquely suited for high-power portable DC-DC and battery-switching roles where thermal headroom and gate drive simplicity are critical.
Availability
PHK13N03LT is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and notebook computer power management requiring stable component supply across multi-year production cycles.
Supply support for PHK13N03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, high-reliability discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and automotive-grade robustness.
PHK13N03LT belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered for high-frequency, low-voltage power conversion in computing and portable consumer electronics where gate drive simplicity and thermal efficiency are paramount.
FAQ
Is PHK13N03LT suitable for 3.3 V gate drive?
Yes-its VGS(th) ranges from 0.5 V to 2.2 V, and RDS(on) is specified down to 21 mΩ at VGS = 4.5 V. At 3.3 V, typical RDS(on) is ~35 mΩ (per Figure 9 extrapolation), supporting moderate-current applications like 2–3 A load switches where conduction loss remains acceptable.
What is the maximum safe operating temperature for continuous operation?
The absolute maximum junction temperature is 150 °C, but continuous operation should be limited to Tj ≤ 125 °C for reliability. With Rth(j-sp) = 20 K/W and a 60 °C PCB solder point, maximum allowable power dissipation is 3.25 W-corresponding to ~5.7 A at 17 mΩ RDS(on).
Does PHK13N03LT have avalanche ruggedness rating?
No avalanche rating is specified in the datasheet. The device is not characterized for repetitive or single-pulse avalanche energy (EAS). Designers must ensure voltage transients remain within the 30 V VDS limit using snubbers or clamping circuits in inductive switching applications.
Can PHK13N03LT replace older PHK13N03L in existing designs?
Yes-PHK13N03LT is the direct successor to PHK13N03L (Rev. 01), with identical pinout, electrical specs, and package. The Rev. 02 datasheet reflects updated formatting and legal text; no parametric or reliability changes were introduced.
PHK13N03LT,518 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.7 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 752 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
PHK13N03LT,518 FAQ
1.How can I place an order for PHK13N03LT,518 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHK13N03LT,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHK13N03LT,518 reliable?
The price and inventory of PHK13N03LT,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHK13N03LT,518 is usually 5 days.
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Once your PHK13N03LT,518 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHK13N03LT,518?
For technical support, including PHK13N03LT,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHK13N03LT,518 requirements.
6.How does Aetrix verify that PHK13N03LT,518 is sourced from the original manufacturer or authorized distributors?
All PHK13N03LT,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHK13N03LT,518 meets industry standards.
7.What is the process for return or replacement of PHK13N03LT,518?
All PHK13N03LT,518 units undergo pre-shipment inspection (PSI). If there is an issue with PHK13N03LT,518, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHK13N03LT,518 part is unused and in its original packaging.
Return procedure for PHK13N03LT,518:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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