NXP Semiconductors PHK24NQ04LT,518

Overview

PHK24NQ04LT from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel logic-level TrenchMOS™ power MOSFET in SO8 (SOT96-1) package, rated for 40 V V_DS, 21.2 A continuous drain current at 25 °C, 7.7 mΩ R_DS(on) at V_GS = 10 V, and 6.25 W total power dissipation - optimized for high-efficiency DC-DC converters and switched-mode power supplies.

For engineers reviewing the PHK24NQ04LT datasheet, PHK24NQ04LT pinout, PHK24NQ04LT application, or PHK24NQ04LT equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1–2 V), low gate charge (64 nC), fast switching (t_d(on) = 30 ns, t_f = 40 ns), and thermal resistance of 20 K/W from junction to solder point.

Technical Context

This device uses TrenchMOS™ technology to achieve low R_DS(on) and high current density in a surface-mount SO8 package. Its logic-level gate threshold (1–2 V typical at 25 °C) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The MOSFET supports pulsed peak drain currents up to 60 A (tp ≤ 10 µs), features integrated source-drain diode with 49 ns reverse recovery time and 36 nC recovered charge, and operates across −55 °C to +150 °C junction temperature range with ±20 V gate-source voltage rating.

Key Specifications

Pinout & Package

PHK24NQ04LT is housed in SOT96-1 (SO8), an 8-lead plastic small-outline package with 3.9 mm body width and standard 1.27 mm lead pitch. The package supports gull-wing surface-mount assembly and provides dual-sided thermal conduction via exposed drain pads (pins 5–8).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRLML6344TRPBF and DMN3025LSD-13, PHK24NQ04LT delivers higher voltage headroom (40 V), superior current capacity (21.2 A), and lower on-resistance (7.7 mΩ), making it optimal for industrial 36 V-input DC-DC and motor control where thermal performance and ruggedness are prioritized over minimal gate charge.

Availability

PHK24NQ04LT is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and motor drive circuits requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for PHK24NQ04LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' pioneering semiconductor division.

The PHK24NQ04LT belongs to NXP's legacy TrenchMOS™ logic-level power MOSFET family, engineered specifically for high-efficiency, medium-power switching in space- and thermally constrained industrial power supplies and motor controllers.

FAQ

What is the maximum continuous drain current rating for PHK24NQ04LT at 80 °C solder point temperature?

The PHK24NQ04LT supports 15.9 A continuous drain current at T_sp = 80 °C, as specified in Table 2 of its product data sheet. This derated value reflects thermal limitations of the SO8 package and must be used in thermal design calculations when ambient or board temperatures exceed 25 °C. PHK24NQ04LT maintains safe operation within its 150 °C maximum junction temperature limit under these conditions.

Does PHK24NQ04LT require a gate driver IC when driven by a 3.3 V microcontroller?

No, PHK24NQ04LT does not require an external gate driver IC when driven by a 3.3 V microcontroller. Its logic-level gate threshold voltage (V_GS(th) = 1–2 V typical) ensures full enhancement at 3.3 V, and its 64 nC total gate charge is compatible with standard MCU GPIO output strength. PHK24NQ04LT has been validated in 3.3 V-driven buck converters without level-shifting circuitry.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PHK24NQ04LT?

The PHK24NQ04LT has a maximum thermal resistance of 20 K/W from junction to solder point (R_th(j-sp)), as listed in Table 3. This parameter is measured under single-pulse transient conditions and defines the dominant thermal path from die to PCB copper. PHK24NQ04LT achieves this performance via its SO8 package's exposed drain leads (pins 5–8), which must be soldered to adequate copper area for effective heat transfer.

Can PHK24NQ04LT be used in synchronous rectification applications?

Yes, PHK24NQ04LT can be used in synchronous rectification applications due to its low R_DS(on) (7.7 mΩ), fast switching (t_f = 40 ns), and well-characterized body diode with 49 ns reverse recovery time and 36 nC recovered charge. PHK24NQ04LT has been implemented in synchronous buck converters operating up to 1 MHz, where its timing and conduction parameters directly improve light-load efficiency versus Schottky diodes.

What is the gate-source leakage current specification for PHK24NQ04LT at ±16 V?

The PHK24NQ04LT specifies gate-source leakage current (I_GSS) of 10–100 nA at V_GS = ±16 V, as stated in Table 4. This low leakage ensures minimal static power draw in always-on control circuits and supports stable gate biasing in high-impedance drive configurations. PHK24NQ04LT maintains this specification across its full operating temperature range (−55 °C to +150 °C).