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NXP Semiconductors PHK28NQ03LT,518
- Part No.:
- PHK28NQ03LT,518
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
PHK28NQ03LT,518.pdf
- Description:
- MOSFET N-CH 30V 23.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,305
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Product details
Overview
PHK28NQ03LT,518 from NXP Semiconductors is a logic-level N-channel TrenchMOS power MOSFET in SO8 (SOT96-1) package, rated for 30 V VDS, 23.7 A continuous drain current at 25 °C, and 5.5 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-efficiency synchronous rectifier or primary-side switch in compact DC-DC converters and industrial SMPS.
For engineers reviewing the PHK28NQ03LT,518 datasheet, PHK28NQ03LT,518 pinout, PHK28NQ03LT,518 application, or PHK28NQ03LT,518 equivalent, key selection criteria include its low gate charge (30.3 nC), logic-compatible 4.5 V turn-on threshold, 11.4 nC gate-drain charge for fast switching, and thermal resistance of 20 K/W from junction to solder point - all critical for high-frequency, thermally constrained power stages.
Technical Context
This device employs TrenchMOS technology to achieve low RDS(on) and optimized gate charge trade-offs. Its gate-source threshold voltage ranges from 1.0 V (typ.) to 2.0 V (max.) at 25 °C, enabling reliable turn-on with 3.3 V or 5 V logic controllers without level-shifting circuitry.
The SO8 package integrates four parallel drain terminals and three source terminals to reduce package inductance and improve current sharing. Dynamic parameters - including 11 ns turn-on delay, 40 ns fall time, and 2800 pF input capacitance - support operation up to several hundred kHz in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial DC-DC designs |
| RDS(on) @ VGS = 10 V | 5.5 mΩ (typ.) - Enables <1 W conduction loss at 14 A, reducing heatsink requirements in 50–100 W supplies |
| QG(tot) | 30.3 nC - Low total gate charge allows efficient drive from standard microcontroller GPIOs or low-power gate drivers |
| ID (continuous) | 23.7 A @ Tsp = 25 °C - Supports high-current output stages when mounted on adequate copper area |
| Rth(j-sp) | 20 K/W - Thermal resistance enables ~3.1 W dissipation before reaching 150 °C junction limit under 25 °C solder point conditions |
| VGS(th) | 1.0–2.0 V @ 25 °C - Ensures robust enhancement-mode turn-on with 3.3 V logic, eliminating need for external gate biasing |
| Ciss | 2800 pF - Input capacitance impacts gate drive energy and EMI filtering design in high-frequency switching applications |
Pinout & Package
PHK28NQ03LT,518 is housed in an SO8 plastic small outline package (SOT96-1), 3.9 mm body width, with exposed drain paddle for enhanced thermal performance. The package supports surface-mount reflow assembly and provides mechanical stability for high-current PCB traces.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce source inductance and improve current distribution in high-di/dt switching |
| 4 | Gate (G) | Single gate input requiring <30 nC charge for full enhancement; compatible with 3.3 V/5 V logic-level drive |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connect to internal die drain metallization, minimizing package resistance and improving thermal path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Turns fully on with 4.5 V VGS, enabling direct interface with MCU GPIOs or low-voltage PWM controllers without level shifters |
| Low RDS(on) at 10 V | 5.5 mΩ typical resistance minimizes I²R losses in high-current paths, improving efficiency in 12–24 V input converters |
| Optimized gate charge profile | QGD/QG ratio of ~38% ensures fast, controllable switching with reduced Miller-induced shoot-through risk |
| TrenchMOS process technology | Enables higher cell density and lower specific on-resistance than planar MOSFETs, delivering superior power density in SO8 footprint |
| Qualified for industrial use | Specified over -55 °C to +150 °C junction temperature range and validated for computing, communications, and industrial environments |
Applications
| Point-of-Load DC-DC Converter | Industrial Switched-Mode Power Supply |
|---|---|
Use Scenario: High-efficiency 12 V to 3.3 V/5 V conversion feeding FPGA or ASIC core rails in programmable logic systems. IC Role / Device Role: Synchronous rectifier in buck converter secondary side, replacing Schottky diode to reduce conduction loss. Use Value: 5.5 mΩ RDS(on) cuts rectifier loss by >60% vs. 40 V/3 A Schottky, improving full-load efficiency by 2–3% at 10–20 A output. |
Use Scenario: Primary-side high-side switch in 24 V input, 48 V output flyback or forward converter for factory automation controllers. IC Role / Device Role: Main power switch operating at 100–200 kHz with 30 V blocking margin and low gate drive demand. Use Value: 30.3 nC QG allows clean switching with low-power gate driver ICs like NCP3420, reducing driver BOM cost and layout complexity. |
| Server Voltage Regulator Module (VRM) | Telecom DC-DC Brick |
Use Scenario: Multiphase buck converter phase leg in server CPU VRM delivering >100 A at sub-1 V, where low RDS(on) and thermal robustness are critical. IC Role / Device Role: High-current, low-inductance power FET with parallel source/drain terminals to minimize parasitic loop inductance. Use Value: Three-source/four-drain pinout reduces package inductance below 1 nH, suppressing voltage spikes and improving phase current balance. |
Use Scenario: Secondary-side synchronous rectifier in isolated 48 V telecom brick supplying 12 V/5 V to base station subsystems. IC Role / Device Role: Logic-level FET driven directly from transformer-coupled gate signal, eliminating auxiliary bias winding. Use Value: 1.0–2.0 V VGS(th) ensures reliable turn-on even with gate drive amplitude reduction due to transformer leakage or duty cycle limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 6.0 mΩ @ 10 V; QG = 32 nC; TO-252 package; higher Rth(j-a) (60 K/W) | Requires larger PCB copper area for thermal management; less suitable for dense SO8 layouts | Preferred when board space permits DPAK and higher single-pulse surge tolerance (IDM = 80 A) is needed |
| DMN3025LSD-13 | RDS(on) = 2.5 mΩ @ 10 V; QG = 24 nC; SO8 package; tighter VGS(th) range (0.5–1.2 V) | Lower threshold increases risk of spurious turn-on in noisy environments; requires stricter gate drive control | Selected when ultra-low RDS(on) is prioritized and system-level noise immunity is guaranteed |
Compared with IRF7470PBF and DMN3025LSD-13, PHK28NQ03LT,518 delivers balanced performance: moderate RDS(on) and gate charge in a thermally optimized SO8, with a VGS(th) window that ensures noise-immune logic-level operation while maintaining drive simplicity - ideal for cost-sensitive, space-constrained industrial power stages.
Availability
PHK28NQ03LT,518 is available at Aetrix Electronics and suitable for DC-DC convertors, switched-mode power supplies, and industrial motor control interfaces requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for PHK28NQ03LT,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
PHK28NQ03LT,518 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered for high-efficiency, low-voltage switching in space-constrained power conversion systems where gate drive simplicity and thermal reliability are essential.
FAQ
What is the maximum continuous drain current rating for PHK28NQ03LT,518 at 100 °C solder point temperature?
The PHK28NQ03LT,518 has a limiting drain current of 15 A at Tsp = 100 °C per Table 4 of the datasheet. This derated value reflects thermal constraints at elevated board temperatures and must be used for thermal design validation instead of the 23.7 A rating specified at 25 °C.
Does PHK28NQ03LT,518 support 3.3 V logic-level gate drive across its full operating temperature range?
Yes - PHK28NQ03LT,518 has a gate-source threshold voltage (VGS(th)) of 0.6 V minimum at Tj = 150 °C and 1.0–2.0 V typical at 25 °C. This ensures reliable turn-on with 3.3 V gate drive across the full -55 °C to +150 °C junction range, as confirmed in Table 6.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PHK28NQ03LT,518, and how is it measured?
The PHK28NQ03LT,518 has a maximum Rth(j-sp) of 20 K/W, defined as thermal resistance from the silicon junction to the PCB solder point under steady-state conditions. This value is derived from transient thermal impedance curves (Figure 4) and validated per JEDEC JESD51-14 standards using calibrated test boards.
Can PHK28NQ03LT,518 be used as a replacement for a standard 30 V N-channel MOSFET in existing SO8 footprints?
Yes - PHK28NQ03LT,518 uses the standard SOT96-1 (SO8) package with identical mechanical dimensions and pinout (1–3 = S, 4 = G, 5–8 = D) as defined in Figure 14 and Table 2. No PCB layout changes are required for drop-in replacement where logic-level drive and RDS(on) specifications align.
What is the peak drain current (IDM) rating for PHK28NQ03LT,518, and under what conditions is it valid?
The PHK28NQ03LT,518 supports a peak drain current of 60 A for pulse widths ≤10 µs, as stated in Table 4. This rating applies under Tsp = 25 °C, with no thermal limitation - it reflects short-duration avalanche-safe capability, not continuous operation, and must be verified against safe operating area (SOA) curves in Figure 3.
PHK28NQ03LT,518 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 23.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 30.3 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2800 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
PHK28NQ03LT,518 FAQ
1.How can I place an order for PHK28NQ03LT,518 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHK28NQ03LT,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHK28NQ03LT,518 reliable?
The price and inventory of PHK28NQ03LT,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHK28NQ03LT,518 is usually 5 days.
3.What payment methods are accepted for PHK28NQ03LT,518?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHK28NQ03LT,518 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHK28NQ03LT,518?
PHK28NQ03LT,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHK28NQ03LT,518 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHK28NQ03LT,518?
For technical support, including PHK28NQ03LT,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHK28NQ03LT,518 requirements.
6.How does Aetrix verify that PHK28NQ03LT,518 is sourced from the original manufacturer or authorized distributors?
All PHK28NQ03LT,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHK28NQ03LT,518 meets industry standards.
7.What is the process for return or replacement of PHK28NQ03LT,518?
All PHK28NQ03LT,518 units undergo pre-shipment inspection (PSI). If there is an issue with PHK28NQ03LT,518, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHK28NQ03LT,518 part is unused and in its original packaging.
Return procedure for PHK28NQ03LT,518:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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