NXP Semiconductors PHK4NQ10T,518

Overview

PHK4NQ10T from Philips Semiconductors is an N-channel enhancement-mode TrenchMOS™ power transistor in SOT96-1 (SO8) package, rated for 100 V drain-source voltage, 4 A continuous drain current at 25 °C, and R_DS(ON) ≤ 70 mΩ at V_GS = 10 V. It serves as a low-loss switching element in motor drivers and DC–DC converters.

For engineers reviewing the PHK4NQ10T datasheet, PHK4NQ10T pinout, PHK4NQ10T application, or PHK4NQ10T equivalent, key selection criteria include its trench MOSFET architecture, SO8 thermal performance (R_{th j-a} = 50 K/W), body diode recovery (t_rr = 60 ns), and gate charge profile (Q_g(tot) = 22 nC).

Technical Context

This device uses Philips' TrenchMOS™ technology to achieve low on-resistance and fast switching with minimal Miller effect-evidenced by Q_gd = 8 nC and C_rss = 84 pF at V_DS = 25 V. Its SO8 package enables dual-side cooling and supports high-current routing via pins 5–8 (drain) and pins 1–3 (source).

The integrated body diode exhibits V_SD = 0.82 V at I_F = 4 A and t_rr = 60 ns under specified dI/dt conditions, making it suitable for synchronous rectification and freewheeling in non-isolated topologies.

Key Specifications

Pinout & Package

SOT96-1 (SO8) surface-mount plastic package with exposed drain paddle (pins 5–8) for thermal and electrical connection; 3.9 mm body width; compliant with JEDEC MS-012AA outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with STP4NK10Z and IRF7404, the PHK4NQ10T uniquely balances 100 V rating, SO8 form factor, and 70 mΩ on-resistance-enabling compact, self-cooled designs in mid-voltage industrial power stages where both voltage headroom and thermal density matter.

Availability

PHK4NQ10T is available at Aetrix Electronics and suitable for motor control, DC–DC conversion, relay driving, and power supply protection requiring stable component supply across industrial OEM production cycles.

Supply support for PHK4NQ10T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Philips Semiconductors (now NXP Semiconductors) is a Dutch semiconductor pioneer known for power management, RF, and automotive ICs, with legacy leadership in discrete MOSFET innovation.

The PHK4NQ10T belongs to Philips' TrenchMOS™ family, engineered specifically for high-efficiency, medium-voltage switching in industrial power supplies and motion control systems where SO8 integration and thermal reliability are critical.

FAQ

What is the maximum continuous drain current for PHK4NQ10T at 70 °C ambient temperature?

The PHK4NQ10T supports 3 A continuous drain current at T_a = 70 °C, per its limiting values table. This derating reflects thermal constraints of the SOT96-1 package, where R_{th j-a} = 50 K/W limits junction temperature rise. At higher currents, forced airflow or PCB copper area expansion is required to maintain T_j ≤ 150 °C. The PHK4NQ10T datasheet confirms this value under "ID Drain current (tp ≤ 10 s)" conditions.

Does PHK4NQ10T include an integrated body diode, and what are its key parameters?

Yes, the PHK4NQ10T integrates a parasitic body diode between source and drain. Key parameters include V_SD = 0.82 V at I_F = 4 A, t_rr = 60 ns, and Q_rr = 120 nC, measured with -dI_F/dt = 100 A/µs and V_R = 25 V. These values enable reliable freewheeling in non-synchronous topologies and reduce need for external diodes in many PHK4NQ10T-based designs.

What gate drive voltage is required to fully enhance PHK4NQ10T?

The PHK4NQ10T achieves full enhancement at V_GS = 10 V, where R_DS(ON) ≤ 70 mΩ is guaranteed. Its gate threshold voltage V_GS(TO) ranges from 2 V to 4 V (typical 3 V) at I_D = 1 mA, but operation below 8 V results in significantly higher on-resistance and increased conduction loss. For robust switching, PHK4NQ10T should be driven with ≥10 V logic or dedicated gate drivers.

Can PHK4NQ10T be used in synchronous rectification applications?

Yes, the PHK4NQ10T is suitable for synchronous rectification due to its fast body diode (t_rr = 60 ns) and low R_DS(ON). When actively driven, it replaces Schottky diodes in secondary-side regulation of forward or LLC converters, reducing forward voltage drop from ~0.4 V to <0.3 V at 4 A. PHK4NQ10T's Q_g(tot) = 22 nC also supports efficient gate drive at typical SMPS frequencies up to 500 kHz.

What is the thermal resistance junction-to-ambient for PHK4NQ10T on a standard FR4 PCB?

The PHK4NQ10T has R_{th j-a} = 50 K/W when surface-mounted on a standard FR4 board with t ≤ 10 s pulse duration, per its Thermal Resistances table. Under steady-state conditions, R_{th j-a} rises to 150 K/W-highlighting the importance of copper pour and thermal vias beneath the drain paddle. This dual-value specification means PHK4NQ10T's thermal performance depends strongly on layout, especially for continuous >1.5 A operation.