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NXP Semiconductors PHK4NQ20T,518
- Part No.:
- PHK4NQ20T,518
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
PHK4NQ20T,518.pdf
- Description:
- MOSFET N-CH 200V 4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,649
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Product details
Overview
PHK4NQ20T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SO8 (SOT96-1) package, rated for 200 V VDS, 4 A continuous drain current at 25 °C, 130 mΩ max RDS(on) at VGS = 10 V and Tj = 25 °C, and 6.25 W total power dissipation - designed for DC-DC primary-side switching in industrial power supplies.
For engineers reviewing the PHK4NQ20T datasheet, PHK4NQ20T pinout, PHK4NQ20T application, or PHK4NQ20T equivalent, this discrete MOSFET supports high-efficiency hard-switched topologies where low conduction loss, fast switching (td(on) = 13 ns, tf = 14 ns), and robust 200 V blocking capability are required in compact surface-mount designs.
Technical Context
This standard-level MOSFET features a TrenchMOS™ silicon process optimized for low RDS(on) without requiring logic-level gate drive - it operates with VGS(th) of 2–4 V and requires ≥10 V for full enhancement. Its SO8 package provides dual-source pins (pins 1–3) and quad-drain pins (pins 5–8) to support high-current routing and thermal spreading.
The device integrates a source-drain diode with VSD = 0.81–1.2 V at IS = 4 A and exhibits reverse recovery characteristics (trr = 104 ns, Qr = 245 nC) suitable for non-synchronous flyback and forward converters - not intended for high-frequency synchronous rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Maximum DC drain-source voltage; enables use in 115/230 VAC offline primary-side switching with adequate safety margin. |
| RDS(on) max | 130 mΩ at VGS = 10 V, Tj = 25 °C - Defines conduction loss: ~2.08 W at 4 A, critical for thermal design in enclosed power modules. |
| ID continuous | 4 A at Tsp = 25 °C - Sustained current capability limited by package thermal resistance (Rth(j-sp) = 20 K/W); derates to 2.58 A at 100 °C solder point. |
| Qg(tot) | 26 nC - Total gate charge determines driver strength requirement; enables <100 kHz operation with moderate gate resistor values. |
| tr/tf | 10 ns / 14 ns - Fast switching transitions reduce overlap loss in hard-switched SMPS, but require careful PCB layout to suppress ringing. |
| VGS(th) | 2–4 V at Tj = 25 °C - Threshold voltage range ensures reliable turn-on with standard 5 V or 12 V controllers, with reduced sensitivity to temperature drift. |
Pinout & Package
PHK4NQ20T is housed in the SOT96-1 (SO8) plastic small-outline package - 8-lead, 3.9 mm body width, with exposed drain pad for enhanced thermal performance. Pin 1 is marked by notch or dot; leads are gull-wing, lead-free compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Common source connection; pins tied internally - used for low-impedance return path and gate-drive reference. |
| 4 | Gate (G) | Control terminal; requires clean, low-inductance gate drive due to 26 nC total charge and Miller effect (Qgd = 8.7 nC). |
| 5, 6, 7, 8 | Drain (D) | High-voltage power terminal; all four pins connected to internal drain metallization - improves current handling and thermal conduction to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 130 mΩ RDS(on) at 200 V rating - achieves higher cell density and lower specific on-resistance than planar MOSFETs of same voltage class. |
| Surface-mount SO8 package | SOT96-1 outline with quad-drain and triple-source terminals - supports automated assembly and improves thermal dissipation over TO-220 in space-constrained designs. |
| Low gate charge (26 nC) | Reduces driver power loss and enables efficient operation up to ~100 kHz without active gate driving complexity. |
| Integrated source-drain diode | VSD = 0.81 V typical at 4 A - allows use in non-synchronous flyback converters without external diode, though trr = 104 ns limits high-frequency operation. |
Applications
| Offline AC-DC Adapter Primary Switch | Industrial DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: 12 V/5 A output flyback converter powered from universal 85–265 VAC input. IC Role / Device Role / Timing Role: Primary-side power switch driven by UC3842 controller at 65 kHz; handles peak drain voltage ~380 V during startup and transient surges. Use Value: 200 V VDS rating with 130 mΩ RDS(on) delivers >85% efficiency at full load while maintaining safe SOA margins under line surge conditions. |
Use Scenario: 48 V input to 12 V/10 A isolated forward converter in programmable logic controller (PLC) power module. IC Role / Device Role / Timing Role: High-side main switch operating at 100 kHz; synchronized with transformer reset winding and freewheeling diode. Use Value: Quad-drain SO8 footprint reduces PCB trace inductance and improves thermal coupling to heatsink plane, enabling stable 4 A continuous operation at 70 °C ambient. |
| LED Driver Bulk Switch | Motor Control Protection FET |
Use Scenario: Constant-current LED string driver with PFC front-end and buck-derived secondary stage. IC Role / Device Role / Timing Role: Bulk switching FET controlling energy transfer into output capacitor bank; switched at 50–100 kHz with duty cycle modulation. Use Value: Low RDS(on) minimizes conduction loss in high-duty-cycle operation, while 26 nC Qg ensures minimal switching loss across dimming range. |
Use Scenario: Overcurrent protection switch in 24 V brushed DC motor H-bridge driver board. IC Role / Device Role / Timing Role: High-side current-limiting FET placed between supply rail and bridge half-H; activated only during fault detection. Use Value: 200 V rating accommodates inductive kickback up to 150 V; 16 A peak drain current (IDM) supports short-circuit withstand for >10 µs without failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK20Z | 200 V, 4 A, RDS(on) = 150 mΩ (typ), TO-220 package, Zener-protected gate. | Through-hole mounting; higher RDS(on) increases conduction loss by ~15% at 4 A; gate protection improves ESD robustness. | Preferred when board-level ESD immunity is critical and thermal mass from TO-220 is acceptable. |
| IRF640NPBF | 200 V, 18 A, RDS(on) = 180 mΩ (max), TO-220, higher current rating but larger die size. | Higher ID rating enables parallel use or future-proofing; larger gate charge (71 nC) demands stronger driver and increases switching loss. | Chosen when system requires headroom for load growth or when existing TO-220 footprint must be retained. |
Compared with STP4NK20Z and IRF640NPBF, PHK4NQ20T offers superior power density via SO8 packaging, lower gate charge for faster switching, and tighter RDS(on) tolerance - making it optimal for cost-sensitive, space-constrained industrial SMPS where surface-mount assembly and thermal management are prioritized.
Availability
PHK4NQ20T is available at Aetrix Electronics and suitable for industrial power supplies, LED drivers, and motor control circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for PHK4NQ20T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions, automotive systems, and industrial power management ICs and discrete devices.
PHK4NQ20T belongs to NXP's legacy TrenchMOS™ power MOSFET family - engineered for high-voltage, medium-current switching in industrial and consumer offline power conversion applications.
FAQ
What is the maximum continuous drain current rating for PHK4NQ20T at 100 °C solder point temperature?
The PHK4NQ20T supports 2.58 A continuous drain current at Tsp = 100 °C, as specified in Table 2 of its product data sheet. This derating reflects thermal limitations of the SOT96-1 package and must be validated against actual PCB copper area and airflow. The PHK4NQ20T datasheet provides normalized current curves (Figure 2) to guide layout-dependent thermal design.
Does PHK4NQ20T have built-in gate protection against ESD or overvoltage?
No - PHK4NQ20T does not integrate gate Zener protection or ESD clamps. Its absolute maximum VGS rating is ±20 V, and gate-source leakage is specified at 10–100 nA. External gate resistors and TVS diodes are recommended in noisy environments. The PHK4NQ20T design assumes controlled gate-drive circuitry per standard MOSFET practice.
Can PHK4NQ20T be used in synchronous rectification applications?
No - PHK4NQ20T is not optimized for synchronous rectification. Its source-drain diode has trr = 104 ns and Qr = 245 nC, which cause significant switching loss and voltage overshoot in high-frequency (<200 kHz) SR topologies. The PHK4NQ20T is intended for primary-side hard switching, not secondary-side rectification.
What is the thermal resistance from junction to solder point (Rth(j-sp)) for PHK4NQ20T?
The PHK4NQ20T has a maximum Rth(j-sp) of 20 K/W, as stated in Table 3. This value assumes proper soldering to a minimum footprint PCB with adequate copper pour. It enables direct thermal modeling from junction to board-level temperature measurement points - critical for predicting PHK4NQ20T reliability in sealed enclosures.
Is PHK4NQ20T pin-compatible with other SO8-packaged 200 V MOSFETs like the STP4NK20Z?
No - STP4NK20Z uses TO-220 packaging and is not pin-compatible with PHK4NQ20T. Among SO8 200 V MOSFETs, PHK4NQ20T shares the SOT96-1 outline with devices such as the NXP PSMN2R0-20PL, but pin function mapping (e.g., multi-source/multi-drain configuration) and thermal pad design differ. Always verify layout compatibility using the PHK4NQ20T mechanical drawing (Figure 14).
PHK4NQ20T,518 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1230 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
PHK4NQ20T,518 FAQ
1.How can I place an order for PHK4NQ20T,518 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHK4NQ20T,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHK4NQ20T,518 reliable?
The price and inventory of PHK4NQ20T,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHK4NQ20T,518 is usually 5 days.
3.What payment methods are accepted for PHK4NQ20T,518?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHK4NQ20T,518 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHK4NQ20T,518?
PHK4NQ20T,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHK4NQ20T,518 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHK4NQ20T,518?
For technical support, including PHK4NQ20T,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHK4NQ20T,518 requirements.
6.How does Aetrix verify that PHK4NQ20T,518 is sourced from the original manufacturer or authorized distributors?
All PHK4NQ20T,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHK4NQ20T,518 meets industry standards.
7.What is the process for return or replacement of PHK4NQ20T,518?
All PHK4NQ20T,518 units undergo pre-shipment inspection (PSI). If there is an issue with PHK4NQ20T,518, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHK4NQ20T,518 part is unused and in its original packaging.
Return procedure for PHK4NQ20T,518:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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