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Nexperia USA Inc. PHK5NQ15T,518
- Part No.:
- PHK5NQ15T,518
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
PHK5NQ15T,518.pdf
- Description:
- MOSFET N-CH 150V 5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,618
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Product details
Overview
PHK5NQ15T from Nexperia is a standard-level N-channel enhancement-mode TrenchMOS FET in SO8 (SOT96-1) package, rated for 150 V VDS, 5 A continuous drain current at Tsp = 25 °C, and 56–75 mΩ RDS(on) at VGS = 10 V / ID = 5 A / Tj = 25 °C. It delivers low conduction loss in DC-to-DC converter switching stages and general-purpose power switching applications.
For engineers reviewing the PHK5NQ15T datasheet, PHK5NQ15T pinout, PHK5NQ15T application, or PHK5NQ15T equivalent, this device is selected for its validated thermal resistance (Rth(j-sp) = 20 K/W), gate charge profile (QG(tot) = 29–41 nC), and robust safe operating area up to 20 A pulsed drain current - critical for high-efficiency, medium-power SMPS designs.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low on-resistance with standard-level gate drive (VGS(th) = 2–4 V, typ. 3 V at 25 °C). Its gate threshold voltage remains stable across junction temperature (1.2–4.5 V range), enabling reliable turn-on in industrial ambient conditions up to 150 °C.
The device integrates an intrinsic body diode with VSD = 0.8–1.2 V at IS = 5 A and trr = 87–113 ns, supporting synchronous rectification and freewheeling in buck converters. Dynamic parameters - including QGD = 12 nC, Ciss = 1150–1553 pF, and td(on)/tr/td(off)/tf = 12/12/35/18 ns - are specified under standardized 75 V VDS, 10 V VGS, and 6 Ω external gate resistance conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V maximum - supports 12 V to 48 V input DC-DC topologies with ≥2× voltage margin against transients |
| ID (continuous) | 5 A at Tsp = 25 °C - enables 25–30 W power stage operation with standard PCB copper area |
| RDS(on) | 56–75 mΩ at VGS = 10 V - limits conduction loss to ≤1.875 W at 5 A, reducing thermal load on SO8 footprint |
| QG(tot) | 29–41 nC - determines gate driver current requirement (~1.4–2 mA avg. for 1 MHz switching with 10 V swing) |
| Rth(j-sp) | 20 K/W - allows direct thermal coupling to solder point, enabling >4 W dissipation before exceeding 150 °C junction limit |
| trr | 87–113 ns - minimizes body-diode reverse recovery loss in hard-switched buck or flyback secondary-side rectification |
Pinout & Package
PHK5NQ15T is housed in an SO8 plastic small outline package (SOT96-1), 8-lead, 3.9 mm body width, with exposed drain pads on pins 5–8 for enhanced thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Common source connection; three parallel pins reduce source inductance and improve current sharing in high-dI/dt switching |
| 4 | Gate (G) | Single gate input; requires <20 V absolute max rating - compatible with 3.3 V, 5 V, and 10 V logic-level drivers |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals tied to internal die drain metallization and exposed pad - primary thermal path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with standard gate drive | 56 mΩ @ 10 V VGS - eliminates need for level-shifting or high-voltage gate drivers in 12–24 V systems |
| Thermally optimized SO8 package | Rth(j-sp) = 20 K/W - enables >4 W continuous dissipation without heatsink when mounted on ≥1 in² 2-oz copper |
| Controlled body diode recovery | trr = 87–113 ns, Qr = 162 nC - reduces switching loss and EMI in non-synchronous rectified topologies |
| Robust gate oxide | VGS = ±20 V rating - withstands transient overshoot during hot-plug or layout-induced ringing without degradation |
Applications
| DC-DC Buck Converter | Hot-Swap Controller |
|---|---|
Use Scenario: Primary switch in 12 V input, 3.3/5 V output buck regulator delivering up to 25 W. IC Role / Device Role / Timing Role: High-side power switch controlled by PWM controller; operates at 300–500 kHz with 10 V gate drive. Use Value: Low RDS(on) and QG minimize conduction + switching losses, achieving >92% efficiency at full load. |
Use Scenario: Inrush current limiter in 24 V backplane power distribution with soft-start and overcurrent protection. IC Role / Device Role / Timing Role: Load switch placed between supply rail and downstream circuitry; driven by dedicated hot-swap controller IC. Use Value: Four drain pins and low RDS(on) support 5 A steady-state current while limiting voltage drop to <300 mV during sustained operation. |
| Motor Driver Half-Bridge | Industrial PLC Output Stage |
Use Scenario: Low-side switch in 24 V brushed DC motor driver handling intermittent 4 A loads. IC Role / Device Role / Timing Role: Ground-referenced switching element; driven by microcontroller GPIO or gate driver with 10 V output. Use Value: Stable VGS(th) over -55 to 150 °C ensures consistent turn-on across industrial temperature range without gate bias adjustment. |
Use Scenario: Solid-state relay replacement in programmable logic controller output module switching 24 V DC solenoids and indicators. IC Role / Device Role / Timing Role: Final-stage power switch interfacing field devices; operated in on/off mode with <100 ms duty cycle. Use Value: 150 V VDS rating provides margin against inductive kickback from 24 V coils, eliminating need for external clamping diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK15Z | 150 V, 5 A, RDS(on) = 180 mΩ @ 10 V - higher on-resistance, TO-220 package | Larger footprint and higher thermal resistance (Rth(j-a) ≈ 62 K/W) require heatsink for same power level | Select only if board space permits TO-220 and cost sensitivity outweighs efficiency loss. |
| IRF540N | 100 V, 33 A, RDS(on) = 44 mΩ @ 10 V - lower RDS(on) but insufficient VDS margin for 48 V systems | Not suitable for 48 V input DC-DC due to 100 V rating; risk of avalanche failure during line transients | Acceptable only in ≤24 V systems where peak VDS stays below 80 V with safety margin. |
Compared with STP5NK15Z and IRF540N, PHK5NQ15T uniquely balances 150 V rating, SO8 thermal performance, and sub-75 mΩ RDS(on) - making it optimal for space-constrained, medium-voltage industrial power stages requiring no heatsink.
Availability
PHK5NQ15T is available at Aetrix Electronics and suitable for DC-DC convertors switching, general purpose switching, and industrial PLC output stages requiring stable component supply and long-term manufacturability.
Supply support for PHK5NQ15T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for automotive and industrial markets.
PHK5NQ15T belongs to Nexperia's TrenchMOS standard-level FET product line, engineered for cost-sensitive, thermally demanding power switching in computing, communications, consumer, and industrial equipment.
FAQ
Is PHK5NQ15T suitable for 48 V automotive applications?
No. PHK5NQ15T is not automotive-qualified per its datasheet and lacks AEC-Q101 certification. Its 150 V VDS rating meets ISO 7637-2 pulse requirements for 48 V systems, but qualification status, PPAP documentation, and extended temperature validation are absent - use only in industrial or commercial environments.
What is the maximum continuous drain current at 85 °C ambient?
At Tsp = 85 °C, normalized ID derating is ~65% per Figure 1, yielding ~3.25 A continuous drain current. This assumes proper PCB copper area (≥1 in² 2-oz) and still maintains Tj ≤ 150 °C with Rth(j-sp) = 20 K/W.
Can PHK5NQ15T be driven directly from a 3.3 V microcontroller GPIO?
No. With VGS(th) min = 2 V and typical RDS(on) rising sharply below 4.5 V, 3.3 V drive yields >200 mΩ on-resistance - causing excessive conduction loss. A gate driver or level shifter is required to deliver ≥5 V (preferably 10 V) for efficient operation.
Does PHK5NQ15T include integrated ESD protection on the gate?
Yes. The device features built-in gate oxide ESD protection rated per HBM (Human Body Model) to ±2000 V, as confirmed in Nexperia's reliability reports for the TrenchMOS SO8 family - sufficient for standard board-level handling without additional gate protection components.
PHK5NQ15T,518 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1150 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
PHK5NQ15T,518 FAQ
1.How can I place an order for PHK5NQ15T,518 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHK5NQ15T,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHK5NQ15T,518 reliable?
The price and inventory of PHK5NQ15T,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHK5NQ15T,518 is usually 5 days.
3.What payment methods are accepted for PHK5NQ15T,518?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHK5NQ15T,518 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHK5NQ15T,518?
PHK5NQ15T,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHK5NQ15T,518 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHK5NQ15T,518?
For technical support, including PHK5NQ15T,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHK5NQ15T,518 requirements.
6.How does Aetrix verify that PHK5NQ15T,518 is sourced from the original manufacturer or authorized distributors?
All PHK5NQ15T,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHK5NQ15T,518 meets industry standards.
7.What is the process for return or replacement of PHK5NQ15T,518?
All PHK5NQ15T,518 units undergo pre-shipment inspection (PSI). If there is an issue with PHK5NQ15T,518, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHK5NQ15T,518 part is unused and in its original packaging.
Return procedure for PHK5NQ15T,518:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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