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Nexperia USA Inc. PHKD13N03LT,118
- Part No.:
- PHKD13N03LT,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
PHKD13N03LT,118.pdf
- Description:
- MOSFET 2N-CH 30V 10.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,435
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Product details
Overview
PHKD13N03LT,118 from Nexperia is a dual N-channel logic-level TrenchMOS FET in SO8 (SOT96-1) package, designed for high-frequency switching in DC-DC converters and portable power systems. It delivers 30 V VDS, 17 mΩ RDS(on) @ VGS = 10 V / ID = 8 A / Tj = 25 °C, and 10.4 A continuous drain current at Tsp = 25 °C - enabling compact, efficient synchronous rectification in notebook and Li-ion battery applications.
For engineers reviewing the PHKD13N03LT,118 datasheet, PHKD13N03LT,118 pinout, PHKD13N03LT,118 application, or PHKD13N03LT,118 equivalent, key selection criteria include dual-channel logic-level gate drive compatibility (VGS(th) = 1–2 V), low QGD (3.9 nC) for fast switching, thermal resistance Rth(j-sp) = 35 K/W, and SO8 footprint suitability for space-constrained PCB layouts.
Technical Context
This dual N-channel MOSFET integrates two independent TrenchMOS cells in a single SO8 package, sharing no internal connection between channels - each channel operates with fully isolated source, gate, and drain terminals. Its logic-level threshold (VGS(th) = 1.0–2.0 V typ. at 25 °C) enables direct drive from 3.3 V or 5 V controllers without level-shifting circuitry.
Dynamic performance is optimized for high-frequency operation: total gate charge QG(tot) = 10.7 nC, rise/fall times of 7 ns / 11 ns, and low output capacitance Coss = 200 pF at VDS = 15 V. The device supports bidirectional current handling via integrated body diodes with VSD = 0.86 V @ IS = 7 A and trr = 25 ns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum drain-source blocking voltage; suitable for 24 V input rails and 12 V bus systems with margin. |
| RDS(on) | 17 mΩ @ VGS = 10 V, ID = 8 A, Tj = 25 °C - enables <1.4 W conduction loss at 8 A, critical for thermally constrained DC-DC stages. |
| ID (cont) | 10.4 A @ Tsp = 25 °C - defines maximum steady-state current per channel under standard PCB mounting conditions. |
| QGD | 3.9 nC - gate-drain charge directly impacts switching loss and dV/dt immunity; low value supports >1 MHz operation. |
| Rth(j-sp) | 35 K/W - junction-to-solder-point thermal resistance enables accurate thermal modeling for solder-joint temperature estimation. |
| Ciss | 752 pF @ VDS = 15 V - input capacitance determines gate driver current demand during turn-on transitions. |
| VGS(th) | 1.0–2.0 V @ ID = 250 µA - logic-level threshold ensures reliable turn-on with 3.3 V microcontrollers and PWM ICs. |
Pinout & Package
PHKD13N03LT,118 uses the SOT96-1 (SO8) plastic small-outline package with 3.9 mm body width and standard 1.27 mm lead pitch. Thermal performance is optimized for solder-point cooling, with exposed drain pads (pins 5,6,7,8) tied to internal drain connections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal for Channel 1 - must be connected to local ground or low-side return path for independent control. |
| 2 | G1 | Gate terminal for Channel 1 - requires low-impedance drive; gate resistor selection affects switching speed and ringing. |
| 3 | S2 | Source terminal for Channel 2 - electrically isolated from S1; enables dual independent half-bridge or load-switch configurations. |
| 4 | G2 | Gate terminal for Channel 2 - driven separately from G1; supports asymmetrical timing or fault-isolated control schemes. |
| 5,6 | D2 | Drain terminals for Channel 2 - internally paralleled; connects to high-side node or power rail in buck/boost topologies. |
| 7,8 | D1 | Drain terminals for Channel 1 - internally paralleled; provides low-inductance drain connection for high-current paths. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.0–2.0 V enables direct interface with 3.3 V/5 V controllers - eliminates level-shifters and reduces BOM count. |
| Low RDS(on) × QG figure-of-merit | 17 mΩ × 10.7 nC = 182 mΩ·nC - balances conduction and switching losses for high-efficiency mid-power SMPS designs. |
| TrenchMOS technology | Enables uniform cell layout and reduced specific on-resistance vs planar MOSFETs - improves current sharing and thermal stability. |
| Fast switching with low QGD | QGD = 3.9 nC minimizes Miller plateau duration - reduces turn-off delay and enhances hard-switching robustness. |
| Integrated body diode | VSD = 0.86 V @ 7 A supports synchronous rectification and freewheeling without external diodes in buck converters. |
Applications
| Lithium-ion Battery Protection | Notebook Computer Power Management |
|---|---|
|
Use Scenario: Dual-channel reverse-polarity and overcurrent protection in 2-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Each channel acts as an independent back-to-back switch controlling charge/discharge paths with precise VGS(th)-based enable timing. Use Value: Low 17 mΩ RDS(on) minimizes voltage drop across protection FETs, preserving battery runtime and reducing thermal stress in sealed enclosures. |
Use Scenario: Dual-phase synchronous buck converter for CPU core voltage regulation in ultrabooks. IC Role / Device Role / Timing Role: One channel serves as high-side switch, the other as low-side switch - both driven by dedicated gate drivers with matched timing. Use Value: Fast 7 ns rise time and 11 ns fall time support >500 kHz switching, reducing output filter size while maintaining <1% output ripple. |
| Portable Equipment DC-DC Conversion | Industrial DC Power Distribution |
|
Use Scenario: Step-down conversion from 12 V to 3.3 V/5 V rails in handheld test instruments and medical monitors. IC Role / Device Role / Timing Role: Configured as primary switching element in non-isolated buck topology, leveraging logic-level drive for MCU-integrated PWM control. Use Value: 3.9 nC QGD and 752 pF Ciss allow clean 1 MHz operation with minimal gate driver power consumption (<5 mW per channel). |
Use Scenario: Redundant 24 V load switching in programmable logic controller (PLC) I/O modules. IC Role / Device Role / Timing Role: Dual independent channels provide hot-swap capability and channel-level fault isolation in distributed power architectures. Use Value: 30 V VDS rating with 150 °C max junction temperature ensures reliable operation in industrial ambient conditions up to 85 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Single SO8 dual-N device but with higher RDS(on) (26 mΩ @ 4.5 V) and no specified QGD. | Lower gate charge not guaranteed; less suitable for >1 MHz designs requiring tight dV/dt control. | Select when cost sensitivity outweighs switching efficiency and thermal margin requirements. |
| SI6926DQ-T1-GE3 | Higher VDS (40 V), higher RDS(on) (22 mΩ @ 4.5 V), and larger QG(tot) (16 nC). | Better voltage margin but increased switching loss; requires stronger gate drivers for same frequency. | Prefer when system input voltage exceeds 28 V or long-term automotive qualification is required. |
Compared with DMN3026LSD-13 and SI6926DQ-T1-GE3, PHKD13N03LT,118 offers the lowest RDS(on) × QGD product and verified 35 K/W Rth(j-sp), making it optimal for thermally dense, high-frequency DC-DC stages where efficiency and thermal predictability are prioritized.
Availability
PHKD13N03LT,118 is available at Aetrix Electronics and suitable for notebook computers, lithium-ion battery protection circuits, and portable equipment DC-DC conversion requiring stable component supply and consistent parametric performance across production lots.
Supply support for PHKD13N03LT,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and robustness for high-volume applications.
PHKD13N03LT,118 belongs to Nexperia's TrenchMOS logic-level dual-FET product line, engineered specifically for space-constrained, high-efficiency power conversion in computing and portable electronics - emphasizing low RDS(on), fast switching, and SO8 manufacturability.
FAQ
Is PHKD13N03LT,118 suitable for automotive applications?
No. PHKD13N03LT,118 is not AEC-Q101 qualified and lacks automotive-grade screening, temperature cycling validation, or PPAP documentation. Nexperia explicitly states it is designed only for computing, communications, consumer, and industrial use - not for safety-critical or life-support systems.
What is the maximum safe operating frequency for PHKD13N03LT,118?
Based on its 7 ns rise time, 11 ns fall time, and 3.9 nC QGD, PHKD13N03LT,118 supports reliable hard-switching up to 1.5 MHz in well-designed layouts with optimized gate drive and PCB thermal management. Above this, switching losses increase significantly due to overlap conduction.
How are the drain pins (5,6,7,8) internally connected?
Pins 5 and 6 are internally bonded to D2 (Channel 2 drain); pins 7 and 8 are internally bonded to D1 (Channel 1 drain). This dual-drain configuration per channel lowers package inductance and improves current sharing - confirmed in Nexperia's pinning diagram and package outline SOT96-1.
Can PHKD13N03LT,118 replace a single-channel SO8 MOSFET in existing designs?
Yes, but only if the design accommodates two independent gate and source connections. Its dual-channel architecture requires separate gate drive signals and source routing - it cannot function as a drop-in replacement for single-channel devices without PCB and schematic modifications.
PHKD13N03LT,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 10.4A
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 752pF @ 15V
- Power - Max:
- 3.57W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
PHKD13N03LT,118 FAQ
1.How can I place an order for PHKD13N03LT,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHKD13N03LT,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHKD13N03LT,118 reliable?
The price and inventory of PHKD13N03LT,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHKD13N03LT,118 is usually 5 days.
3.What payment methods are accepted for PHKD13N03LT,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHKD13N03LT,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHKD13N03LT,118?
PHKD13N03LT,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHKD13N03LT,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHKD13N03LT,118?
For technical support, including PHKD13N03LT,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHKD13N03LT,118 requirements.
6.How does Aetrix verify that PHKD13N03LT,118 is sourced from the original manufacturer or authorized distributors?
All PHKD13N03LT,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHKD13N03LT,118 meets industry standards.
7.What is the process for return or replacement of PHKD13N03LT,118?
All PHKD13N03LT,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHKD13N03LT,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHKD13N03LT,118 part is unused and in its original packaging.
Return procedure for PHKD13N03LT,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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