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Nexperia USA Inc. PHKD13N03LT,518
- Part No.:
- PHKD13N03LT,518
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
PHKD13N03LT,518.pdf
- Description:
- MOSFET 2N-CH 30V 10.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,283
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Product details
Overview
PHKD13N03LT,518 from Nexperia is a dual N-channel logic-level TrenchMOS FET in SO8 (SOT96-1) package, designed for high-frequency switching in DC-DC converters and portable power systems. It delivers 30 V VDS, 17 mΩ RDS(on) @ VGS=10 V/ID=8 A/Tj=25°C, and 10.4 A continuous drain current at Tsp=25°C - enabling compact, efficient synchronous rectification in notebook and Li-ion battery applications.
For engineers reviewing the PHKD13N03LT,518 datasheet, PHKD13N03LT,518 pinout, PHKD13N03LT,518 application, or PHKD13N03LT,518 equivalent, key selection criteria include dual-channel logic-level gate drive compatibility (VGS(th) = 1–2 V), low QGD (3.9 nC) for fast switching, thermal resistance Rth(j-sp) = 35 K/W, and SO8 footprint suitability for space-constrained PCB layouts.
Technical Context
This dual N-channel MOSFET integrates two independent TrenchMOS cells in a single SO8 package, sharing no internal connection between channels - enabling fully independent control of each FET. Its logic-level threshold (VGS(th) = 1.0–2.0 V at Tj=25°C) ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs without level-shifting.
Dynamic performance is optimized for high-frequency operation: Ciss = 752 pF, Coss = 200 pF, and fast switching times (td(on) = 6 ns, tf = 11 ns) minimize conduction and switching losses in buck converters operating above 500 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports input rails up to 24 V in industrial and portable DC-DC designs without derating. |
| RDS(on) | 17 mΩ @ VGS=10 V, ID=8 A, Tj=25°C - enables <1.4 W conduction loss at 8 A, critical for thermally constrained notebooks. |
| QGD | 3.9 nC - low gate-drain charge reduces Miller-induced switching delay and improves hard-switching efficiency. |
| ID | 10.4 A @ Tsp=25°C - defines maximum continuous current under standard PCB mounting conditions. |
| Rth(j-sp) | 35 K/W - junction-to-solder-point thermal resistance enables direct thermal coupling to copper pour for passive cooling. |
| VGS(th) | 1.0–2.0 V @ Tj=25°C - guarantees turn-on with standard logic-level drivers, eliminating external gate boosters. |
| Ciss | 752 pF @ VDS=15 V - input capacitance determines gate drive strength requirement for 1 MHz-class switching. |
Pinout & Package
PHKD13N03LT,518 uses the SOT96-1 (SO8) plastic small-outline package, 8-lead, 3.9 mm body width, with exposed drain pads on pins 5–8 for enhanced thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of Channel 1 - connects to low-side return path; electrically isolated from S2. |
| 2 | G1 | Gate terminal of Channel 1 - accepts logic-level drive; requires no negative bias for safe turn-off. |
| 3 | S2 | Source terminal of Channel 2 - independent return node; enables dual synchronous rectifier or half-bridge topologies. |
| 4 | G2 | Gate terminal of Channel 2 - fully decoupled from G1; supports independent PWM control per channel. |
| 5,6 | D2 | Drain terminal of Channel 2 - internally paralleled pins (5 & 6) reduce package inductance and improve current sharing. |
| 7,8 | D1 | Drain terminal of Channel 1 - internally paralleled pins (7 & 8) provide low-inductance, high-current drain connection. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 2.2 V ensures full enhancement with 3.3 V MCU outputs - eliminates level shifters in portable designs. |
| Low RDS(on) × QG figure-of-merit | 17 mΩ × 10.7 nC = 182 mΩ·nC - balances conduction and switching loss for high-efficiency 500 kHz–1 MHz DC-DC stages. |
| Dual independent channels | No internal connection between S1/G1/D1 and S2/G2/D2 - supports asymmetric topologies like dual-output buck or active clamp forward. |
| Fast switching with low QGD | 3.9 nC gate-drain charge minimizes Miller plateau duration, reducing overlap loss in hard-switched converters. |
| Thermally optimized SO8 | Exposed drain pads (pins 5–8) enable direct thermal path to PCB copper - achieves 35 K/W Rth(j-sp) without heatsinks. |
Applications
| DC-DC Converters | Lithium-ion Battery Protection |
|---|---|
|
Use Scenario: Synchronous rectification in 12 V → 3.3 V/5 V buck converters for embedded computing modules. IC Role / Device Role / Timing Role: Dual-channel N-FET replaces diode pair in secondary side - one channel handles main output, the other supports auxiliary rail or power sequencing. Use Value: Reduces conduction loss by >60% vs. Schottky diodes, enabling >92% efficiency at 5 A load while maintaining SO8 footprint. |
Use Scenario: Dual-path protection in 2-cell Li-ion battery packs (8.4 V max) with independent charge/discharge control. IC Role / Device Role / Timing Role: Each channel acts as a back-to-back configured load switch - blocking reverse current during charging and discharge faults. Use Value: Enables true bidirectional blocking with <1.4 V total drop at 7 A, meeting JEITA EC-62133 thermal safety thresholds. |
| Notebook Computers | Portable Equipment Power Management |
|
Use Scenario: CPU core voltage regulation (Vcore) and GPU rail generation in ultra-thin notebooks with strict thermal envelope. IC Role / Device Role / Timing Role: Dual FET used in multiphase interleaved buck stage - one channel per phase for current balancing and ripple cancellation. Use Value: 17 mΩ RDS(on) and 35 K/W Rth(j-sp) allow 10.4 A/channel operation within 40°C board temperature rise limit. |
Use Scenario: Load switching and power path management in handheld medical monitors and ruggedized tablets. IC Role / Device Role / Timing Role: Independent channel control routes power from USB-C PD input or battery to system rails, supporting seamless source handover. Use Value: Logic-level gate compatibility enables direct MCU control; low QG (10.7 nC) ensures <1 µs turn-on for fast fault isolation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3028LSD-13 | Single SO8 dual-N device but with higher RDS(on) (28 mΩ @ 4.5 V) and no specified QGD. | Lower switching speed limits use in >1 MHz converters; better suited for cost-sensitive 300–500 kHz applications. | Select when gate drive voltage is limited to 4.5 V and thermal budget allows higher conduction loss. |
| SI7850DP-T1-GE3 | Higher VDS (40 V), lower RDS(on) (12.5 mΩ @ 10 V), but larger PowerPAK SO-8 package with different pinout. | Requires PCB redesign due to non-SO8 footprint; superior for 24 V input industrial converters needing margin. | Choose when system input exceeds 24 V or when sub-15 mΩ RDS(on) justifies layout change and sourcing complexity. |
Compared with DMN3028LSD-13 and SI7850DP-T1-GE3, PHKD13N03LT,518 uniquely balances 30 V rating, 17 mΩ RDS(on), SO8 compatibility, and 3.9 nC QGD - making it optimal for space- and thermally constrained 12–24 V portable DC-DC designs where pinout retention is mandatory.
Availability
PHKD13N03LT,518 is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and notebook computer power delivery requiring stable component supply across long-lifecycle consumer electronics programs.
Supply support for PHKD13N03LT,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.
The PHKD13N03LT,518 belongs to Nexperia's TrenchMOS logic-level dual-FET product line, engineered specifically for high-efficiency, high-density power conversion in computing and portable electronics - emphasizing low RDS(on), fast switching, and SO8 thermal performance.
FAQ
Is PHKD13N03LT,518 suitable for automotive applications?
No. PHKD13N03LT,518 is not AEC-Q101 qualified and is explicitly rated only for computing, communications, consumer, and industrial applications per its datasheet. It lacks automotive-grade screening, extended temperature validation beyond –55°C to +150°C, and failure-in-time (FIT) data required for automotive use.
What is the maximum continuous drain current at 100°C solder point temperature?
The maximum continuous drain current at Tsp = 100°C is 6.6 A, as defined in Table 4 (Limiting Values) under "ID drain current" with VGS = 10 V. This reflects thermal derating due to reduced heat dissipation capability at elevated board temperatures.
Can both channels be paralleled for higher current handling?
No. The datasheet specifies independent channel operation with no internal connection between channels. Paralleling would require precise matching of VGS(th), RDS(on), and layout symmetry - which is unsupported and risks thermal imbalance. Use per-channel ratings (10.4 A max each) as specified.
Does PHKD13N03LT,518 include integrated ESD protection?
Yes. The device features built-in ESD protection rated at >2 kV HBM (Human Body Model), as confirmed by Nexperia's standard qualification for logic-level MOSFETs. This protects gate oxide during PCB handling and assembly but does not replace system-level TVS protection for I/O lines.
PHKD13N03LT,518 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 10.4A
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.7nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 752pF @ 15V
- Power - Max:
- 3.57W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
PHKD13N03LT,518 FAQ
1.How can I place an order for PHKD13N03LT,518 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHKD13N03LT,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHKD13N03LT,518 reliable?
The price and inventory of PHKD13N03LT,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHKD13N03LT,518 is usually 5 days.
3.What payment methods are accepted for PHKD13N03LT,518?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHKD13N03LT,518 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHKD13N03LT,518?
PHKD13N03LT,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHKD13N03LT,518 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHKD13N03LT,518?
For technical support, including PHKD13N03LT,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHKD13N03LT,518 requirements.
6.How does Aetrix verify that PHKD13N03LT,518 is sourced from the original manufacturer or authorized distributors?
All PHKD13N03LT,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHKD13N03LT,518 meets industry standards.
7.What is the process for return or replacement of PHKD13N03LT,518?
All PHKD13N03LT,518 units undergo pre-shipment inspection (PSI). If there is an issue with PHKD13N03LT,518, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHKD13N03LT,518 part is unused and in its original packaging.
Return procedure for PHKD13N03LT,518:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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