Nexperia USA Inc. PHKD6N02LT,518

Overview

PHKD6N02LT from Nexperia is a dual N-channel TrenchMOS logic-level power FET in SO8 (SOT96-1) package, designed for high-efficiency DC-DC conversion and battery management. It delivers 10.9 A continuous drain current at 25 °C, 20 V drain-source rating, and 16–20 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, enabling compact synchronous buck stages in portable computing power rails.

For engineers reviewing the PHKD6N02LT datasheet, PHKD6N02LT pinout, PHKD6N02LT application, or PHKD6N02LT equivalent, this device is selected for dual-channel logic-level switching where low gate-threshold compatibility (V_GS(th) = 0.5–1.5 V), tight thermal resistance (R_th(j-sp) = 30 K/W), and integrated source-drain diode recovery (t_rr = 40 ns) are critical to system efficiency and layout density.

Technical Context

This dual N-channel FET integrates two independent trench-based MOSFETs in a single SO8 package, sharing no internal connection between channels - each has dedicated gate, source, and drain terminals. Its logic-level drive capability (V_GS(th) ≤ 1.5 V, fully enhanced at V_GS = 2.5 V) allows direct interface with 3.3 V or 5 V microcontrollers without level-shifting circuitry.

The device employs TrenchMOS technology to achieve low R_DS(on) while maintaining robust safe operating area (SOA) up to 44 A peak pulsed current and 20 V V_DS. Thermal design is supported by a defined junction-to-solder-point path (R_th(j-sp) = 30 K/W), enabling accurate PCB thermal modeling for high-power-density applications.

Key Specifications

Pinout & Package

PHKD6N02LT uses the SOT96-1 (SO8) plastic small-outline package, 8-lead, 3.9 mm body width, with exposed drain pads for thermal performance. Pin numbering follows standard SO8 orientation (pin 1 index corner).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level FET applications.

Compared with DMN6016LSD-13 and SI7850DP-T1-GE3, PHKD6N02LT uniquely balances logic-level drive (≤1.5 V V_GS(th)), verified 40 ns t_rr, and SO8 dual-channel integration - making it optimal for compact, high-frequency, low-voltage synchronous converters where gate drive simplicity and body-diode performance are jointly constrained.

Availability

PHKD6N02LT is available at Aetrix Electronics and suitable for battery chargers, DC-to-DC convertors, and notebook computers requiring stable component supply and long-term industrial lifecycle support.

Supply support for PHKD6N02LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power semiconductors.

PHKD6N02LT belongs to Nexperia's TrenchMOS logic-level FET product line, engineered specifically for space-constrained, high-efficiency power conversion in computing and portable consumer electronics - emphasizing low gate-threshold, low R_DS(on), and robust thermal performance in standard surface-mount packages.

FAQ

Is PHKD6N02LT qualified for automotive applications?

No. PHKD6N02LT is explicitly designated for computing, communications, consumer, and industrial applications only. It is not AEC-Q101 qualified, lacks automotive-grade screening, and is not tested to automotive temperature or reliability standards. Use in automotive systems requires formal qualification by the customer and carries full liability risk per Nexperia's legal disclaimers.

What is the maximum continuous drain current per channel at 100 °C solder point temperature?

At T_sp = 100 °C, the maximum continuous drain current per channel is 6.8 A, as specified in Table 4 (Limiting values). This derating reflects thermal constraints of the SO8 package and must be applied in thermal design - not the 10.9 A value rated at 25 °C.

Can the two channels share a common source connection?

No. Pins 1 (S1) and 3 (S2) are physically and electrically isolated source terminals. They are not internally connected and must be routed separately. Shared-source operation would require external PCB wiring and introduces cross-talk risk - the device is designed for independent channel control.

Does PHKD6N02LT include ESD protection on gate terminals?

Yes. The device incorporates built-in gate protection diodes, evidenced by the ±12 V absolute maximum V_GS rating and IGSS leakage specification (≤100 nA at ±12 V). However, it is not rated to HBM or CDM ESD standards - external gate resistors and TVS clamping are recommended in noisy environments.