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NXP Semiconductors PHM15NQ20T,518
- Part No.:
- PHM15NQ20T,518
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
PHM15NQ20T,518.pdf
- Description:
- MOSFET N-CH 200V 17.5A 8HVSON
- Quantity:
- Payment:
- Shipping:
Inventory:5,021
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Product details
Overview
PHM15NQ20T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in QLPAK (SOT685-1) package, rated for 200 V VDS, 17.5 A continuous drain current at Tmb = 25 °C, and 62.5 W total power dissipation. It delivers RDS(on) ≤ 85 mΩ at VGS = 10 V and Tj = 25 °C, and is designed for primary-side switching in DC-to-DC converters.
For engineers reviewing the PHM15NQ20T datasheet, PHM15NQ20T pinout, PHM15NQ20T application, or PHM15NQ20T equivalent, key selection criteria include its 200 V blocking capability, low thermal resistance (Rth(j-mb) = 2 K/W), avalanche ruggedness (210 mJ non-repetitive), gate charge profile (Qg(tot) = 40 nC), and surface-mount QLPAK footprint compatibility with SO-8 layouts.
Technical Context
This device employs TrenchMOS™ technology to achieve low RDS(on) and high avalanche energy tolerance. Its gate threshold voltage (VGS(th)) ranges from 2.0–4.0 V at 25 °C, enabling standard 10 V gate drive compatibility while maintaining robust noise immunity across −55 to +150 °C junction temperature range.
The integrated source-drain diode supports synchronous rectification and flyback recovery, with VSD = 0.86–1.2 V at IS = 10 A and reverse recovery time trr = 190 ns. Thermal performance is optimized via a thermally enhanced mounting base directly connected to the drain terminals, delivering 2 K/W junction-to-mounting-base resistance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Maximum DC drain-source voltage; enables use in 100–170 VAC input offline or 48–96 V DC bus applications. |
| ID (DC) | 17.5 A at Tmb = 25 °C - Continuous current rating under ideal heatsinking; derates to 11 A at Tmb = 100 °C. |
| RDS(on) | 71–85 mΩ at VGS = 10 V, Tj = 25 °C - Low on-resistance minimizes conduction loss in high-current switching nodes. |
| Qg(tot) | 40 nC - Total gate charge determines driver strength requirement and switching loss trade-off in hard-switched topologies. |
| EDS(AL)S | 210 mJ - Non-repetitive unclamped inductive avalanche energy; supports robust operation during transient overloads. |
| Rth(j-mb) | 2 K/W - Junction-to-mounting-base thermal resistance enables direct PCB copper pour cooling without external heatsink. |
| trr | 190 ns - Source-drain diode reverse recovery time; impacts efficiency and EMI in freewheeling paths. |
Pinout & Package
PHM15NQ20T uses the QLPAK (SOT685-1) package: plastic thermal-enhanced very thin small outline package, 6 × 5 × 0.85 mm body, no leads, 8 terminals, with exposed mounting base electrically tied to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce package inductance and improve current sharing in high-frequency switching. |
| 4 | Gate (G) | Single gate input with ±20 V maximum rating; requires stable 10 V drive for full RDS(on) specification. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals plus mounting base provide low-inductance, high-current drain path and thermal conduction. |
| MB (Mounting Base) | Drain (D) | Exposed copper pad electrically and thermally connected to drain; must be soldered to large PCB copper area for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables lower RDS(on) and higher cell density vs planar MOSFETs, improving power density in space-constrained converters. |
| QLPAK thermal package | 2 K/W Rth(j-mb) allows >60 W dissipation with minimal PCB copper area-no external heatsink required in many 25–50 W designs. |
| Non-repetitive avalanche rating | 210 mJ energy withstand enables reliable operation during short-circuit or overload events without immediate failure. |
| Low gate charge | 40 nC Qg(tot) reduces gate driver power consumption and enables efficient operation up to 500 kHz switching frequencies. |
| Integrated source-drain diode | VSD = 0.86 V typical at 10 A supports cost-effective synchronous rectification or freewheeling without discrete diode. |
Applications
| DC-DC Primary-Side Switch | Portable Power Adapter |
|---|---|
|
Use Scenario: High-efficiency 24–48 V input buck or flyback converter powering industrial sensors or IoT edge nodes. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into transformer or inductor; operates in hard-switched PWM mode. Use Value: 200 V rating accommodates 48 V nominal input with surge margin; 85 mΩ RDS(on) limits conduction loss below 1.5 W at 15 A peak. |
Use Scenario: Compact 12 V/2 A wall adapter for medical handheld devices requiring low EMI and high reliability. IC Role / Device Role / Timing Role: Main switching FET in quasi-resonant flyback topology; handles 100 kHz–250 kHz switching with low Qg. Use Value: 190 ns trr and 70 pF Crss minimize switching loss and ringing; QLPAK package ensures thermal stability in sealed enclosures. |
| DC Bus Protection Switch | Motor Drive Half-Bridge |
|
Use Scenario: 24–48 V DC distribution board with electronic circuit breaker functionality for robotics control modules. IC Role / Device Role / Timing Role: High-side load switch providing overcurrent and short-circuit protection via current-sense feedback loop. Use Value: 210 mJ avalanche energy withstand allows safe clamping of inductive kickback during fault shutdown without destruction. |
Use Scenario: Low-voltage BLDC motor driver stage in cordless power tools operating from 18–36 V battery packs. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving phase winding; commutated at 10–20 kHz. Use Value: Parallel source pins (1–3) and drain pins (5–8) reduce parasitic inductance, minimizing voltage spikes during fast turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF20 | TO-220 package, 200 V/16 A, RDS(on) = 120 mΩ, higher Rth(j-case) = 3.5 K/W | Requires mechanical heatsink; unsuitable for ultra-thin or surface-mount-only designs | Preferred where through-hole assembly and higher thermal mass are acceptable |
| IRF640NPBF | TO-220 package, 200 V/18 A, RDS(on) = 180 mΩ, Qg = 67 nC, no avalanche rating specified | Lacks documented avalanche ruggedness; higher switching losses due to larger Qg | Acceptable only in non-critical, low-stress linear or low-frequency switching roles |
Compared with STP16NF20 and IRF640NPBF, PHM15NQ20T offers superior thermal performance (2 K/W vs ≥3.5 K/W), lower conduction loss (85 mΩ vs ≥120 mΩ), and verified 210 mJ avalanche capability-making it uniquely suitable for compact, high-reliability DC-DC and motor drive applications where board space and transient robustness are critical.
Availability
PHM15NQ20T is available at Aetrix Electronics and suitable for DC-DC converters, portable power adapters, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHM15NQ20T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips Semiconductors' power electronics heritage.
The PHM15NQ20T belongs to NXP's TrenchMOS™ standard-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in space-constrained industrial and consumer power supplies.
FAQ
What is the maximum continuous drain current rating for PHM15NQ20T?
The PHM15NQ20T has a maximum continuous drain current (ID) of 17.5 A at mounting base temperature Tmb = 25 °C and VGS = 10 V. This rating decreases to 11 A at Tmb = 100 °C per the normalized derating curve in Figure 2 of the datasheet. The device's 2 K/W thermal resistance enables this performance with appropriate PCB copper area.
Does PHM15NQ20T support avalanche operation, and what is its rated energy?
Yes, PHM15NQ20T is rated for non-repetitive drain-source avalanche energy (EDS(AL)S) of 210 mJ under specified conditions: unclamped inductive load, ID = 11 A, pulse width tp = 0.14 ms, VDD ≤ 200 V, RGS = 50 Ω, VGS = 10 V, and starting Tj = 25 °C. Repetitive avalanche energy is limited to 2.1 mJ.
What is the gate-source threshold voltage range for PHM15NQ20T?
The gate-source threshold voltage (VGS(th)) for PHM15NQ20T is specified as 2.0–4.0 V at Tj = 25 °C, 1.2–4.4 V at Tj = −55 to +150 °C. This range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity across the full operating temperature range.
How is thermal management implemented in the PHM15NQ20T QLPAK package?
Thermal management in PHM15NQ20T relies on its QLPAK (SOT685-1) package, which features an exposed mounting base (MB) electrically and thermally connected to the drain. With Rth(j-mb) = 2 K/W, heat flows directly from the silicon die to the PCB copper pour. Effective cooling requires soldering MB to ≥2 cm² of 2-oz copper with multiple thermal vias to inner layers.
What are the key dynamic parameters that affect PHM15NQ20T switching performance?
Key dynamic parameters for PHM15NQ20T include total gate charge Qg(tot) = 40 nC, gate-drain (Miller) charge Qgd = 12.7 nC, input capacitance Ciss = 2170 pF, and turn-off delay time td(off) = 58 ns. These values determine gate driver sizing, switching loss, and EMI behavior-especially critical in high-frequency DC-DC converters above 200 kHz.
PHM15NQ20T,518 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 17.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 85mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2170 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-HVSON (5x6)
PHM15NQ20T,518 FAQ
1.How can I place an order for PHM15NQ20T,518 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHM15NQ20T,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHM15NQ20T,518 reliable?
The price and inventory of PHM15NQ20T,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHM15NQ20T,518 is usually 5 days.
3.What payment methods are accepted for PHM15NQ20T,518?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHM15NQ20T,518 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHM15NQ20T,518?
PHM15NQ20T,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHM15NQ20T,518 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHM15NQ20T,518?
For technical support, including PHM15NQ20T,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHM15NQ20T,518 requirements.
6.How does Aetrix verify that PHM15NQ20T,518 is sourced from the original manufacturer or authorized distributors?
All PHM15NQ20T,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHM15NQ20T,518 meets industry standards.
7.What is the process for return or replacement of PHM15NQ20T,518?
All PHM15NQ20T,518 units undergo pre-shipment inspection (PSI). If there is an issue with PHM15NQ20T,518, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHM15NQ20T,518 part is unused and in its original packaging.
Return procedure for PHM15NQ20T,518:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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