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Nexperia USA Inc. PHN210T,118
- Part No.:
- PHN210T,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
PHN210T,118.pdf
- Description:
- MOSFET 2N-CH 30V 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,120
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Product details
Overview
PHN210T from NXP Semiconductors is a dual N-channel enhancement-mode TrenchMOS FET in SO8 (SOT96-1) package, designed for intermediate-level switching in compact power stages. It delivers 3.4 A continuous drain current per channel at 25 °C, 30 V VDS, and RDS(on) of 80 mΩ (typ.) at VGS = 10 V, enabling efficient logic-level gate drive in DC-DC converters and motor drivers.
For engineers reviewing the PHN210T datasheet, PHN210T pinout, PHN210T application, or PHN210T equivalent, this device supports high-frequency switching with 6 ns turn-on delay, 0.7 nC QGD, and low 250 pF Ciss - critical for synchronous buck topologies, relay control, and level translation where dual-channel integration reduces board space and gate-drive complexity.
Technical Context
The PHN210T integrates two independent N-channel MOSFETs sharing a common drain configuration (pins 5/6 = D2, pins 7/8 = D1), optimized for half-bridge or dual-switch topologies. Its TrenchMOS process enables low RDS(on) across temperature and fast dynamic performance: td(on) = 6 ns, tr = 8 ns, and QG(tot) = 6 nC at VGS = 10 V.
It operates with gate threshold voltage VGS(th) ranging from 0.4 V (150 °C) to 2.8 V (25 °C), supporting direct microcontroller drive without level-shifting. Avalanche ruggedness is rated at 13 mJ (unclamped, 3.4 A), and thermal resistance Rth(j-a) is 150 K/W on FR4, confirming suitability for thermally constrained industrial PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 24 V rail systems with margin against transients |
| ID (per channel) | 3.4 A continuous at Tsp = 25 °C - enables 5–10 W discrete switching stages |
| RDS(on) | 80 mΩ typ. at VGS = 10 V, 25 °C - ensures <100 mW conduction loss at 1.25 A |
| QGD | 0.7 nC - minimizes Miller-induced switching delay in high-dV/dt environments |
| Ciss | 250 pF - balances gate drive strength and EMI control in 1–2 MHz converters |
| td(on) | 6 ns - allows precise timing control in synchronous rectification and PWM dimming |
| VGS(th) | 1.0–2.8 V at 25 °C - compatible with 3.3 V and 5 V logic outputs without external bias |
Pinout & Package
Package: SO8 plastic small outline package (SOT96-1), 8-lead, body width 3.9 mm, surface-mountable on FR4 with standard reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal for Channel 1 - connects to low-side return path or bootstrap capacitor ground |
| 2 | G1 | Gate terminal for Channel 1 - requires ≤20 V drive; low QG enables fast edge rates |
| 3 | S2 | Source terminal for Channel 2 - electrically isolated from S1; supports dual independent loads |
| 4 | G2 | Gate terminal for Channel 2 - independently controllable; no internal cross-coupling |
| 5, 6 | D2 | Drain terminals for Channel 2 - internally paralleled; handles full channel current (3.4 A) |
| 7, 8 | D1 | Drain terminals for Channel 1 - internally paralleled; enables high-current routing with low inductance |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Operates fully enhanced at VGS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V MCU designs |
| Dual-channel integration in single SO8 | Reduces footprint by ~40% vs. two discrete SO8 FETs - saves PCB area and interconnect inverter legs |
| TrenchMOS technology | Delivers 20% lower RDS(on) and 30% lower QG than planar equivalents - improves efficiency in 500 kHz–2 MHz converters |
| Avalanche-rated structure | Withstands 13 mJ unclamped energy - protects against inductive kickback in relay/motor drive without snubbers |
| Low internal source inductance | LS = 5 nH - suppresses gate oscillation and improves stability in high-speed switching |
Applications
| DC-DC Converters | Logic Level Translators |
|---|---|
Use Scenario: Synchronous buck converter in point-of-load (POL) supplies for FPGA I/O banks. IC Role / Device Role / Timing Role: Dual-channel FET functions as integrated high-side and low-side switch; D1/S1 and D2/S2 form complementary pair with shared gate timing control. Use Value: 80 mΩ RDS(on) and 6 ns td(on) reduce conduction and switching losses, enabling >92% efficiency at 1.2 V/3 A output. |
Use Scenario: Bidirectional voltage-level shifting between 3.3 V microcontroller GPIO and 5 V peripheral bus. IC Role / Device Role / Timing Role: One channel acts as pass transistor with gate tied to reference voltage; second channel provides enable control or direction select. Use Value: Low VGS(th) dispersion (1.0–2.8 V) ensures reliable turn-on across temperature, eliminating false triggering during hot/cold operation. |
| Motor Drivers | Relay Drivers |
Use Scenario: H-bridge driver for 12 V brushed DC fan or small actuator in HVAC control module. IC Role / Device Role / Timing Role: Two channels implement one half-bridge leg (D1/G1/S1 + D2/G2/S2); paired with another PHN210T for full bridge. Use Value: 14 A peak drain current and 13 mJ avalanche energy tolerate stall currents and inductive flyback without external protection diodes. |
Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Single channel switches 24 V DC coil load; second channel reserved for status feedback or redundancy. Use Value: 30 V VDS rating and 2.2 A source current capability support 24 V industrial control rails with 200% surge margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | Single SO8 dual-N FET, 30 V, 4.2 A, RDS(on) = 25 mΩ @ 10 V - lower on-resistance but higher QG (12 nC) | Better for high-current, low-frequency switching; less suitable for >1 MHz due to higher gate charge | Select when minimizing conduction loss dominates over switching speed; verify gate drive strength for 12 nC load |
| SI3456DV-T1-GE3 | SO8 dual-N, 30 V, 3.8 A, RDS(on) = 55 mΩ @ 10 V, QGD = 0.9 nC - tighter RDS(on) tolerance but no avalanche rating | Higher efficiency in steady-state loads; unsuitable for inductive switching without external clamping | Prefer for battery-powered logic-level translators where avalanche stress is absent; avoid in relay/motor drive |
Compared with DMN3025LSD-13 and SI3456DV-T1-GE3, the PHN210T offers balanced trade-offs: moderate RDS(on) and ultra-low QGD for high-frequency operation, plus certified avalanche ruggedness - making it uniquely suited for cost-sensitive, thermally constrained industrial DC-DC and relay control where reliability under transient stress is non-negotiable.
Availability
PHN210T is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and relay control circuits requiring stable component supply across computing, communications, consumer, and industrial product lifecycles.
Supply support for PHN210T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PHN210T belongs to NXP's TrenchMOS discrete power portfolio, engineered specifically for space-constrained, medium-power switching applications where dual-channel integration, logic-level drive, and robust transient handling are essential design requirements.
FAQ
Is the PHN210T suitable for automotive applications?
No. The PHN210T is explicitly qualified only for computing, communications, consumer, and industrial applications per its product profile. It is not AEC-Q101 qualified, lacks automotive-grade screening, and carries no warranty for use in safety-critical or life-support systems. Automotive designs require verified alternatives such as NXP's BUK9Y8R5-40E or Infineon's BSC010N04LS.
What is the maximum allowable gate-source voltage for continuous operation?
The absolute maximum VGS is ±20 V, but the recommended operating range is –12 V to +12 V for long-term reliability. Exceeding ±12 V risks gate oxide degradation, especially at elevated junction temperatures. The device achieves full enhancement at VGS ≥ 4.5 V, making 5 V logic drive safe and effective.
How are the drain pins configured internally?
Pins 5 and 6 are bonded together internally as D2 (Channel 2 drain); pins 7 and 8 are bonded together as D1 (Channel 1 drain). This dual-drain layout reduces package inductance and improves current sharing - confirmed in the official pinning diagram and package outline (SOT96-1).
Does the PHN210T include integrated body diodes, and what are their characteristics?
Yes - each channel has an inherent source-drain diode. At Tj = 25 °C and IS = 1.25 A, VSD is 0.82–1.2 V, with reverse recovery time trr = 69 ns and recovered charge Qr = 55 nC. These parameters support moderate-frequency freewheeling in DC-DC and motor drive, though external Schottky diodes are recommended for >500 kHz operation.
PHN210T,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- -
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 250pF @ 20V
- Power - Max:
- 2W
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
PHN210T,118 FAQ
1.How can I place an order for PHN210T,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHN210T,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHN210T,118 reliable?
The price and inventory of PHN210T,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHN210T,118 is usually 5 days.
3.What payment methods are accepted for PHN210T,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHN210T,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHN210T,118?
PHN210T,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHN210T,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHN210T,118?
For technical support, including PHN210T,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHN210T,118 requirements.
6.How does Aetrix verify that PHN210T,118 is sourced from the original manufacturer or authorized distributors?
All PHN210T,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHN210T,118 meets industry standards.
7.What is the process for return or replacement of PHN210T,118?
All PHN210T,118 units undergo pre-shipment inspection (PSI). If there is an issue with PHN210T,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHN210T,118 part is unused and in its original packaging.
Return procedure for PHN210T,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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