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NXP Semiconductors PHP110NQ06LT,127
- Part No.:
- PHP110NQ06LT,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP110NQ06LT,127.pdf
- Description:
- MOSFET N-CH 55V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:6,154
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Product details
Overview
PHP110NQ06LT,127 from NXP Semiconductors is a logic-level N-channel TrenchMOS power MOSFET in D2PAK (SOT404) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 6.2 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-current switching element in DC-DC converters, motor drives, and UPS systems.
For engineers reviewing the PHP110NQ06LT,127 datasheet, PHP110NQ06LT,127 pinout, PHP110NQ06LT,127 application, or PHP110NQ06LT,127 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1–2 V), low RDS(on) at 4.5 V, avalanche ruggedness (280 mJ), thermal resistance (Rth(j-mb) = 0.75 K/W), and mounting-base thermal management in high-power industrial designs.
Technical Context
This device uses NXP's TrenchMOS technology to achieve low on-resistance and fast switching with logic-level gate drive capability. Its gate threshold voltage (VGS(th)) ranges from 0.5 V to 2.2 V across temperature, enabling reliable turn-on with standard 3.3 V or 5 V microcontroller outputs.
The MOSFET features an integrated source-drain diode with 0.85–1.2 V forward voltage and 69 ns reverse recovery time, supporting synchronous rectification and freewheeling in hard-switched topologies. Its 240 A peak drain current and unclamped avalanche rating of 280 mJ support robust operation under transient overloads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage compatible with 48 V nominal bus systems and transient clamping up to 55 V. |
| RDS(on) | 6.2 mΩ (typ) at VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 40 A, critical for thermal efficiency in high-current switches. |
| ID (continuous) | 75 A at Tmb = 25 °C - Supports high-power loads when mounted on thermally optimized PCBs or heatsinks. |
| QG(tot) | 45 nC (typ) - Determines gate driver power requirement and switching speed in PWM applications. |
| Rth(j-mb) | 0.75 K/W - Enables direct thermal coupling to heatsink via mounting base, essential for >100 W power dissipation. |
| VGS(th) | 1.0–2.0 V (typ) at Tj = 25 °C - Ensures full enhancement with 3.3 V or 5 V logic-level drivers without level-shifting circuitry. |
| EAS | 280 mJ (unclamped) - Provides single-pulse avalanche energy handling for inductive load switching reliability. |
Pinout & Package
Package: D2PAK (SOT404), plastic single-ended surface-mounted package with 3 leads (one lead cropped); mounting base electrically connected to drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input requiring ≤10 V for full enhancement; low QGS/QGD ratio supports fast, low-loss switching. |
| 2 (D) | Drain | Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current path and thermal conduction. |
| 3 (S) | Source | Power return and reference node for gate drive; forms common-source configuration with low parasitic inductance. |
| Mounting Base (mb) | Drain (connected) | Electrically and thermally tied to drain; must be soldered to copper pour or heatsink for Rth(j-mb) = 0.75 K/W performance. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 2.2 V ensures full turn-on with 3.3 V/5 V MCUs, eliminating need for gate driver ICs in many embedded power stages. |
| Low RDS(on) at 4.5 V | 9.3 mΩ (max) enables efficient operation directly from 5 V logic rails, reducing system BOM and layout complexity. |
| TrenchMOS architecture | Delivers superior RDS(on) × QG figure-of-merit for high-frequency switching with minimal conduction and switching losses. |
| Unclamped avalanche rating | 280 mJ EAS provides design margin against inductive kickback in motor and solenoid drive applications. |
| Thermal mounting base | Direct drain-to-heatsink interface achieves 0.75 K/W junction-to-mounting-base resistance, enabling compact high-power designs. |
Applications
| DC-DC Converters | Motor & Solenoid Control |
|---|---|
Use Scenario: High-current synchronous buck converter in telecom power supplies delivering 12 V/30 A output. IC Role / Device Role / Timing Role: Primary high-side switch operating at 200–500 kHz with 4.5–10 V gate drive. Use Value: 6.2 mΩ RDS(on) minimizes conduction loss; 45 nC QG enables efficient gate driving at target frequency. |
Use Scenario: H-bridge driver for 24 V brushed DC motors in industrial automation actuators. IC Role / Device Role / Timing Role: Low-side or high-side switching element controlled by MCU GPIO with logic-level compatibility. Use Value: 240 A peak current and 280 mJ avalanche energy withstand motor stall and inductive flyback transients. |
| Uninterruptible Power Supplies | Industrial Load Switching |
Use Scenario: Bidirectional battery switch and inverter half-bridge in 48 V UPS systems. IC Role / Device Role / Timing Role: Power FET in battery disconnect and AC inversion paths, subject to frequent switching and surge currents. Use Value: Mounting base thermal path sustains 200 W Ptot at Tmb = 25 °C; source-drain diode supports freewheeling with 69 ns trr. |
Use Scenario: Solid-state relay replacement for 24–48 V lamp and solenoid control in PLC I/O modules. IC Role / Device Role / Timing Role: High-reliability, low-drop load switch driven directly from 5 V digital outputs. Use Value: 1.0–2.0 V VGS(th) guarantees turn-on margin; 75 A rating accommodates inrush currents of incandescent lamps and inductive coils. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N6L-12 | RDS(on) = 7.2 mΩ @ 10 V; VDS = 60 V; TO-220 package; no mounting base thermal path. | Lacks integrated thermal base; requires separate heatsink mounting and isolation; higher RDS(on) increases conduction loss. | Choose when TO-220 mechanical fit is required and board-level thermal design allows discrete heatsinking. |
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V; VDS = 40 V; TO-220; VGS(th) = 2–4 V - not logic-level at 3.3 V. | Lower voltage rating limits use to ≤36 V systems; higher VGS(th) risks incomplete turn-on with 3.3 V drivers. | Prefer only in 24 V systems where gate drive ≥4.5 V is guaranteed and lower RDS(on) justifies reduced voltage margin. |
Compared with STP110N6L-12 and IRF1404ZPBF, PHP110NQ06LT,127 uniquely combines logic-level drive (≤2 V threshold), 55 V rating, D2PAK thermal base, and 6.2 mΩ RDS(on) - making it optimal for space-constrained, high-current industrial power stages requiring direct MCU control and efficient thermal management.
Availability
PHP110NQ06LT,127 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and uninterruptible power supplies requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.
Supply support for PHP110NQ06LT,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
PHP110NQ06LT,127 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in computing, communications, consumer, and industrial power systems - with emphasis on thermal performance and logic-compatible gate drive.
FAQ
What is the maximum continuous drain current rating for PHP110NQ06LT,127?
The PHP110NQ06LT,127 is rated for 75 A continuous drain current at mounting base temperature (Tmb) = 25 °C with VGS = 10 V. Derating applies above 25 °C per Figure 1 in the datasheet, and actual current capability depends on PCB copper area, heatsinking, and ambient conditions.
Does PHP110NQ06LT,127 support 3.3 V logic-level gate drive?
Yes - PHP110NQ06LT,127 has a gate threshold voltage (VGS(th)) of 1.0–2.0 V at Tj = 25 °C, and RDS(on) remains 9.3 mΩ (max) at VGS = 4.5 V, confirming reliable enhancement with 3.3 V microcontroller outputs in typical industrial operating conditions.
What is the thermal resistance from junction to mounting base for PHP110NQ06LT,127?
The PHP110NQ06LT,127 has a maximum thermal resistance of Rth(j-mb) = 0.75 K/W from junction to mounting base, measured under specified test conditions. This value assumes proper soldering of the mounting base to a thermally conductive plane or heatsink.
Is PHP110NQ06LT,127 suitable for avalanche-prone applications like motor drive?
Yes - PHP110NQ06LT,127 is characterized for unclamped inductive switching with EAS = 280 mJ at Tj(init) = 25 °C, ID = 75 A, and Vsup ≤ 55 V. This rating validates its use in motor, solenoid, and lamp switching where inductive energy must be safely absorbed.
What package type does PHP110NQ06LT,127 use, and how is pin 2 configured?
PHP110NQ06LT,127 uses the D2PAK (SOT404) package. Pin 2 is the drain terminal and is internally connected to the mounting base; per datasheet note [1], no external connection is made to pin 2 - it is inaccessible and electrically tied to the base.
PHP110NQ06LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3960 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP110NQ06LT,127 FAQ
1.How can I place an order for PHP110NQ06LT,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP110NQ06LT,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP110NQ06LT,127 reliable?
The price and inventory of PHP110NQ06LT,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP110NQ06LT,127 is usually 5 days.
3.What payment methods are accepted for PHP110NQ06LT,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP110NQ06LT,127 transactions.
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4.How is shipping managed for PHP110NQ06LT,127?
PHP110NQ06LT,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHP110NQ06LT,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP110NQ06LT,127?
For technical support, including PHP110NQ06LT,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP110NQ06LT,127 requirements.
6.How does Aetrix verify that PHP110NQ06LT,127 is sourced from the original manufacturer or authorized distributors?
All PHP110NQ06LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP110NQ06LT,127 meets industry standards.
7.What is the process for return or replacement of PHP110NQ06LT,127?
All PHP110NQ06LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP110NQ06LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP110NQ06LT,127 part is unused and in its original packaging.
Return procedure for PHP110NQ06LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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