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NXP Semiconductors PHP110NQ08LT,127
- Part No.:
- PHP110NQ08LT,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP110NQ08LT,127.pdf
- Description:
- MOSFET N-CH 75V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,412
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Product details
Overview
PHP110NQ08LT from NXP Semiconductors (formerly Philips) is a logic-level N-channel TrenchMOS™ power MOSFET in TO-220AB (SOT78) package, rated for 75 V VDS, 75 A ID, and 230 W Ptot, with RDS(on) ≤ 8.5 mΩ at VGS = 10 V. It serves as a high-current switching element in DC-to-DC converters, motor drives, and uninterruptible power supplies.
For engineers reviewing the PHP110NQ08LT datasheet, PHP110NQ08LT pinout, PHP110NQ08LT application, or PHP110NQ08LT equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1–2 V), low on-resistance under thermal stress, avalanche ruggedness (560 mJ), and mounting-base thermal resistance (0.65 K/W).
Technical Context
This device uses TrenchMOS™ technology to achieve enhanced conduction efficiency and fast switching dynamics. Its gate threshold voltage (1–2 V at Tj = 25 °C) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.
The MOSFET features integrated source-drain diode with 75 A continuous forward current capability and 70 ns reverse recovery time. Its safe operating area supports pulsed drain currents up to 240 A, and unclamped inductive avalanche energy is rated at 560 mJ under defined test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum drain-source blocking voltage; defines maximum system bus voltage it can switch safely. |
| ID (DC) | 75 A at Tmb = 25 °C - Continuous current handling capacity with heatsink; derates to 75 A even at Tmb = 100 °C. |
| RDS(on) | 7.2–8.5 mΩ at VGS = 10 V, Tj = 25 °C - Low conduction loss enabling <1 W dissipation at 40 A; rises to ≤17.9 mΩ at 175 °C. |
| VGS(th) | 1–2 V at ID = 1 mA - Logic-level threshold ensures full enhancement with standard digital I/O voltages. |
| EAS | 560 mJ - Non-repetitive avalanche energy rating; supports robust operation during inductive load turn-off transients. |
| Qg(tot) | 127.3 nC - Total gate charge determines driver strength requirement; impacts switching speed and gate drive losses. |
| Rth(j-mb) | 0.65 K/W - Junction-to-mounting-base thermal resistance; enables high-power dissipation with properly heatsinked TO-220AB mounting. |
Pinout & Package
PHP110NQ08LT is housed in a TO-220AB plastic single-ended package (SOT78) with heatsink mounting and one mounting hole. The metal mounting base is electrically connected to the drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control electrode; requires ≤±20 V gate-source voltage; logic-compatible threshold enables direct MCU interface. |
| 2 | Drain (D) | High-side power terminal; internally bonded to mounting base; must be isolated from heatsink unless drain-referenced design. |
| 3 | Source (S) | Power return path and reference for gate drive; connects to system ground or low-side switching node. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1–2 V enables direct interface with 3.3 V/5 V controllers-no external level shifter required. |
| TrenchMOS™ technology | Delivers 7.2 mΩ RDS(on) at 10 V drive while maintaining rugged SOA and avalanche capability. |
| Integrated source-drain diode | Supports 75 A continuous forward current and 240 A pulsed current; trr = 70 ns enables efficient freewheeling in buck/bridge topologies. |
| Avalanche-rated | 560 mJ unclamped inductive avalanche energy allows reliable operation during inductive turn-off without external snubbers. |
| Thermally optimized package | Rth(j-mb) = 0.65 K/W permits high continuous power dissipation when mounted to an adequately sized heatsink. |
Applications
| Motor Drive Control | DC-DC Converter Switch |
|---|---|
|
Use Scenario: High-current H-bridge or half-bridge driving brushed DC motors in industrial automation systems. IC Role / Device Role / Timing Role: Main power switch in low-side or high-side configuration; handles bidirectional current up to 75 A. Use Value: Low RDS(on) minimizes conduction loss and heat generation; logic-level gate simplifies gate driver design. |
Use Scenario: Primary synchronous rectifier or high-side switch in 48 V input telecom DC-DC modules. IC Role / Device Role / Timing Role: Power switching element in buck, boost, or LLC resonant converter stages operating at ≤100 kHz. Use Value: Fast switching (tf = 226 ns) and low Qg reduce dynamic losses; avalanche rating protects against inductive spikes. |
| Uninterruptible Power Supply | Industrial Load Switching |
|
Use Scenario: Battery isolation and inverter output stage in line-interactive UPS systems with 24–48 V battery banks. IC Role / Device Role / Timing Role: Bidirectional power switch managing battery charge/discharge paths and AC output inversion. Use Value: Integrated source-drain diode supports reverse conduction during battery backup mode; 75 V rating covers 48 V nominal + surge margin. |
Use Scenario: Solid-state replacement for electromechanical relays controlling solenoids, lamps, and heating elements in PLC I/O modules. IC Role / Device Role / Timing Role: High-reliability load switch with overcurrent and thermal protection interface. Use Value: 230 W total power dissipation and 175 °C max junction temperature support sustained operation in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N8F6 | RDS(on) = 7.5 mΩ @ 10 V, but VGS(th) = 2–4 V (higher threshold); TO-220FP package lacks mounting base. | Less suitable for 3.3 V logic drive; requires higher gate voltage for full enhancement. | Prefer PHP110NQ08LT where 3.3 V microcontroller control or heatsink-integrated drain is required. |
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V, but VGS(th) = 2–4 V; no specified avalanche energy rating; TO-220AB package with drain-connected tab. | Better conduction loss at high VGS, but lacks logic-level compatibility and documented avalanche ruggedness. | Choose PHP110NQ08LT when logic-level drive, guaranteed avalanche performance, or precise VGS(th) control is critical. |
Compared with STP110N8F6 and IRF1404ZPBF, PHP110NQ08LT provides tighter gate-threshold control for low-voltage drive, verified avalanche energy (560 mJ), and a thermally optimized TO-220AB package with drain-connected mounting base-making it preferred for space-constrained, high-reliability industrial switching.
Availability
PHP110NQ08LT is available at Aetrix Electronics and suitable for motor drives, DC-to-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHP110NQ08LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, headquartered in Eindhoven, Netherlands.
PHP110NQ08LT belongs to the TrenchMOS™ logic-level power MOSFET product line, engineered for high-efficiency, high-current switching in industrial power conversion, motor control, and energy infrastructure applications.
FAQ
What is the gate threshold voltage range for PHP110NQ08LT?
The gate-source threshold voltage (VGS(th)) of PHP110NQ08LT is specified as 1–2 V at Tj = 25 °C and ID = 1 mA. It decreases to 0.5 V minimum at 175 °C and increases to 2.2 V maximum at −55 °C. This tight logic-level range ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs across its full operating temperature range.
Is PHP110NQ08LT suitable for 3.3 V microcontroller gate drive?
Yes, PHP110NQ08LT is explicitly designed for logic-level drive: its VGS(th) starts at 1 V and guarantees full enhancement at VGS = 4.5 V (RDS(on) ≤ 9.95 mΩ at 25 A). With typical RDS(on) of 7.6 mΩ at VGS = 5 V and 7.2 mΩ at VGS = 10 V, it delivers low conduction loss directly from 3.3 V or 5 V GPIOs without level-shifting circuitry.
What is the thermal resistance from junction to mounting base for PHP110NQ08LT?
The maximum thermal resistance from junction to mounting base (Rth(j-mb)) for PHP110NQ08LT is 0.65 K/W, measured under specified test conditions. This value enables high-power operation-e.g., dissipating 100 W with only ~65 °C temperature rise across the junction-to-heatsink interface-when mounted to a properly designed heatsink using the TO-220AB package's integral drain-connected mounting base.
Does PHP110NQ08LT have avalanche energy rating?
Yes, PHP110NQ08LT is rated for 560 mJ of non-repetitive drain-source avalanche energy (EAS) under defined test conditions: unclamped inductive load, ID = 75 A, tp = 0.15 ms, VDD ≤ 75 V, RGS = 50 Ω, VGS = 10 V, and starting Tj = 25 °C. This rating confirms ruggedness against inductive switching transients in motor and converter applications.
What package type is PHP110NQ08LT supplied in?
PHP110NQ08LT is supplied in the TO-220AB plastic single-ended package (JEDEC SC-46, Philips SOT78), featuring three leads and a metal mounting base electrically connected to the drain. The package includes one mounting hole and is designed for heatsink attachment with thermal interface material, supporting high-power dissipation up to 230 W at Tmb = 25 °C.
PHP110NQ08LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 127.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6631 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP110NQ08LT,127 FAQ
1.How can I place an order for PHP110NQ08LT,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP110NQ08LT,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP110NQ08LT,127 reliable?
The price and inventory of PHP110NQ08LT,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP110NQ08LT,127 is usually 5 days.
3.What payment methods are accepted for PHP110NQ08LT,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP110NQ08LT,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHP110NQ08LT,127?
PHP110NQ08LT,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHP110NQ08LT,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP110NQ08LT,127?
For technical support, including PHP110NQ08LT,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP110NQ08LT,127 requirements.
6.How does Aetrix verify that PHP110NQ08LT,127 is sourced from the original manufacturer or authorized distributors?
All PHP110NQ08LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP110NQ08LT,127 meets industry standards.
7.What is the process for return or replacement of PHP110NQ08LT,127?
All PHP110NQ08LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP110NQ08LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP110NQ08LT,127 part is unused and in its original packaging.
Return procedure for PHP110NQ08LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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