NXP Semiconductors PHP110NQ08T,127

Overview

PHP110NQ08T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in TO-220AB (SOT78) package, rated for 75 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 9 mΩ typical R_DS(on) at V_GS = 10 V - used in high-current DC-to-DC converters and motor drive stages.

For engineers reviewing the PHP110NQ08T datasheet, PHP110NQ08T pinout, PHP110NQ08T application, or PHP110NQ08T equivalent, key selection criteria include verified R_DS(on) ≤9 mΩ at 25 °C, avalanche energy rating of 560 mJ, thermal resistance R_th(j-mb) ≤0.65 K/W, and compatibility with standard-level gate drive (V_GS(th) = 2–4 V).

Technical Context

This device employs TrenchMOS™ technology to achieve low on-resistance and high current capability in a through-hole TO-220AB package. Its standard-level gate threshold (V_GS(th) = 2–4 V) enables direct drive from 5 V logic without level-shifting, while its 75 V breakdown voltage supports 48 V industrial bus systems.

The integrated source-drain diode exhibits V_SD = 0.82–1.2 V at I_S = 25 A and t_rr = 75 ns, supporting synchronous rectification and freewheeling in hard-switched topologies. Avalanche ruggedness (E_DS(AL)S = 560 mJ) ensures robustness under inductive switching stress.

Key Specifications

Pinout & Package

PHP110NQ08T uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and three leads. The mounting base is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IRF1404, PHP110NQ08T offers optimal balance of 75 V rating, 9 mΩ R_DS(on), and 113 nC gate charge - making it uniquely suited for 48 V industrial power conversion where both voltage margin and efficiency matter.

Availability

PHP110NQ08T is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and DC-to-DC converters requiring stable component supply across long-lifecycle industrial programs.

Supply support for PHP110NQ08T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions for industrial, automotive, and communications markets.

The PHP110NQ08T belongs to the TrenchMOS™ standard-level power MOSFET product line, designed specifically for high-current, medium-voltage switching in cost-sensitive industrial power systems.

FAQ

What is the maximum continuous drain current rating for PHP110NQ08T?

The PHP110NQ08T is rated for 75 A continuous drain current at mounting base temperature (T_mb) = 25 °C and V_GS = 10 V. Derating applies above 25 °C - e.g., ~50 A at T_mb = 100 °C. This rating assumes proper heatsinking with R_th(j-mb) ≤0.65 K/W, as specified in the original Philips product data sheet Rev. 01 (2004).

Does PHP110NQ08T support gate drive from a 5 V microcontroller?

Yes, PHP110NQ08T has a standard-level gate threshold voltage (V_GS(th)) of 2–4 V at T_j = 25 °C, enabling full enhancement with 5 V logic-level signals. It does not require gate boosting or level-shifting circuitry, making it directly compatible with most 5 V MCUs and PWM controllers - a key design advantage confirmed in the Philips datasheet Section 6 (Characteristics).

What is the thermal resistance from junction to mounting base for PHP110NQ08T?

The maximum thermal resistance from junction to mounting base (R_th(j-mb)) for PHP110NQ08T is 0.65 K/W, per Table 4 in the Philips product data sheet. This value enables >200 W power dissipation with a 150 K temperature rise - critical for high-current applications like motor drives and UPS inverters where heatsink space is constrained.

Is PHP110NQ08T avalanche-rated, and what is its energy rating?

Yes, PHP110NQ08T is fully avalanche-rated with a non-repetitive drain-source avalanche energy (E_DS(AL)S) of 560 mJ under specified test conditions (I_D = 75 A, t_p = 0.15 ms, V_DD ≤75 V). This rating is documented in Table 3 (Limiting Values) and supports robust operation in inductive load switching without external snubbers.

What package type is used for PHP110NQ08T, and how is the mounting base connected?

PHP110NQ08T uses the TO-220AB package (SOT78), a plastic single-ended through-hole package with heatsink mounting. The mounting base is electrically connected to the drain terminal (Pin 2), as shown in Figure 14 and confirmed in the Pinning Information section - requiring electrical isolation from PCB ground unless the circuit topology explicitly references the drain as system common.