NXP Semiconductors PHP112N06T,127

Overview

PHP112N06T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT78 (TO-220AB) package, rated for 55 V drain-source voltage, 75 A continuous drain current at T_mb = 25 °C, and 8 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 25 A - optimized for high-efficiency switching in DC-DC converters and motor drive half-bridges.

For engineers reviewing the PHP112N06T datasheet, PHP112N06T pinout, PHP112N06T application, or PHP112N06T equivalent, key selection criteria include its low on-resistance, avalanche ruggedness (360 mJ), thermal resistance (0.75 K/W junction-to-mounting-base), fast switching performance (t_d(off) ≤ 140 ns), and compatibility with standard gate drivers in 12–48 V industrial power systems.

Technical Context

This device uses TrenchMOS™ technology to achieve low R_DS(on) and high current density in a through-hole TO-220AB package with electrically isolated mounting base connected to drain. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V at 25 °C, enabling reliable turn-on with 5 V or 10 V logic-level gate drive.

The integrated body diode supports synchronous rectification and freewheeling in buck converters and H-bridge motor drives, with reverse recovery time (t_rr) of 65 ns and recovered charge (Q_r) of 0.17 µC under specified conditions - critical for minimizing switching losses in hard-commutated topologies.

Key Specifications

Pinout & Package

PHP112N06T is housed in SOT78 (TO-220AB) plastic package with electrically isolated mounting base tied to drain. Pin 1 is gate (G), pin 2 is drain (D), and pin 3 is source (S); the mounting base (MB) is internally connected to pin 2 (drain) and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IRF1404, PHP112N06T delivers optimal balance of 55 V rating, 7.2 mΩ on-resistance, and proven avalanche ruggedness for 48 V industrial power conversion - avoiding over-specification in voltage or unnecessary complexity in paralleling.

Availability

PHP112N06T is available at Aetrix Electronics and suitable for switched-mode power supplies, motor drive inverters, and industrial PLC output stages requiring stable component supply and long-term manufacturability.

Supply support for PHP112N06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' pioneering semiconductor division.

The PHP112N06T belongs to NXP's legacy TrenchMOS™ power MOSFET family, engineered for high-current, medium-voltage switching in industrial power conversion and motor control systems where reliability and thermal performance are critical.

FAQ

What is the maximum continuous drain current for PHP112N06T at 100 °C mounting base temperature?

The PHP112N06T supports 52.5 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, per the limiting values table. This derating reflects thermal constraints of the TO-220AB package and must be verified against actual heatsink performance and ambient conditions in the final design. The PHP112N06T datasheet Figure 2 provides normalized current curves for precise thermal design.

Does PHP112N06T have a gate-source Zener diode for ESD protection?

No, PHP112N06T does not integrate a gate-source Zener diode. Its gate-source leakage current (I_GSS) is specified at ±20 V, indicating the absolute maximum V_GS rating, but no internal clamping is provided. External gate protection - such as a 12–15 V Zener between gate and source - is recommended in noisy industrial environments to prevent gate oxide damage. This applies specifically to the PHP112N06T device.

Can PHP112N06T be used in synchronous rectification configurations?

Yes, PHP112N06T can be used for synchronous rectification due to its low R_DS(on) (7.2 mΩ) and fast body diode (t_rr = 65 ns, Q_r = 0.17 µC). However, its body diode forward voltage (V_SD = 0.85 V typ at 25 A) is higher than dedicated SR controllers, so optimal performance requires precise gate timing to avoid cross-conduction. This capability is confirmed in the PHP112N06T characteristics table and Figure 14.

What is the thermal resistance from junction to ambient for PHP112N06T in free-air conditions?

The PHP112N06T has a junction-to-ambient thermal resistance (R_th(j-a)) of 60 K/W when mounted vertically in still air, per Table 4. This value assumes no heatsink - practical use requires mounting the TO-220AB package to a heatsink via the isolated mounting base to achieve the much lower R_th(j-mb) of 0.75 K/W. This thermal specification is explicitly defined for the PHP112N06T in its official product specification.

Is PHP112N06T RoHS compliant and lead-free?

PHP112N06T was released in 2001 prior to RoHS Directive 2002/95/EC implementation. While the original datasheet does not declare RoHS compliance, NXP's legacy product change notifications confirm that PHP112N06T is available in both leaded (SnPb) and lead-free (Pb-free) versions - the latter meeting JEDEC J-STD-609A Class 1 marking requirements. Confirm version suffix with Aetrix Electronics before ordering PHP112N06T.