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NXP Semiconductors PHP119NQ06T,127
- Part No.:
- PHP119NQ06T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP119NQ06T,127.pdf
- Description:
- MOSFET N-CH 55V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,482
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Product details
Overview
PHP119NQ06T from NXP Semiconductors is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 200 W total power dissipation. It delivers 5.8 mΩ typical RDS(on) at VGS = 10 V and ID = 25 A, Tj = 25 °C, and is optimized for DC-to-DC converters and industrial motor/solenoid switching.
For engineers reviewing the PHP119NQ06T datasheet, PHP119NQ06T pinout, PHP119NQ06T application, or PHP119NQ06T equivalent, key selection criteria include its standard-level gate drive compatibility (VGS(th) = 2–4.4 V), low thermal resistance (Rth(j-mb) = 0.75 K/W), avalanche ruggedness (280 mJ), and mounting-base-connected drain configuration.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low conduction losses and stable switching performance across -55 °C to +175 °C junction temperature range. Its gate threshold voltage varies from 1 V at Tj = 175 °C to 4.4 V at Tj = -55 °C, enabling robust turn-on control under thermal stress.
The device features an integrated source-drain diode with 0.85–1.2 V forward voltage at IS = 25 A and exhibits 62 ns reverse recovery time (trr) and 60 nC recovered charge (Qr) - critical parameters for synchronous rectification and flyback snubber design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum drain-source voltage - defines safe blocking capability in 48 V bus and UPS applications. |
| RDS(on) | 5.8 mΩ typical at VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1.5 W conduction loss at 25 A, reducing heatsink requirements. |
| QGD | 17 nC gate-drain charge - directly impacts switching loss and Miller plateau duration in hard-switched topologies. |
| td(on)/tr | 24 ns / 52 ns - fast turn-on delay and rise time support high-frequency PWM up to 500 kHz in DC-DC stages. |
| Rth(j-mb) | 0.75 K/W - allows direct heatsink mounting for efficient thermal management without isolation pads. |
| EDS(AL)S | 280 mJ non-repetitive avalanche energy - provides single-pulse fault tolerance during inductive load switching. |
| VGS(th) | 2–4.4 V range over temperature - ensures reliable gate drive margin with standard 5 V or 10 V controllers. |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base electrically connected to the drain terminal. Dimensions per IEC/JEDEC SC-46 outline; 3-lead, 1 mounting hole.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control electrode; requires ≤20 V gate-source voltage; 100 nA max leakage at ±20 V. |
| 2 (D) / mb | Drain / Mounting Base | Main high-side current path; electrically tied to heatsink - mandates isolation if heatsink is grounded. |
| 3 (S) | Source | Power return node; referenced for gate drive; supports 75 A continuous and 240 A pulsed current. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 5.8 mΩ typical enables <1.5 W conduction loss at 25 A, reducing thermal design burden in high-current switches. |
| Standard-level gate drive | Operates fully enhanced with 10 V gate drive - compatible with legacy 5 V/10 V logic and gate drivers without level-shifting. |
| Avalanche-rated | 280 mJ unclamped avalanche energy supports robust operation during inductive turn-off transients in motor drives. |
| Thermally optimized package | 0.75 K/W junction-to-mounting-base thermal resistance enables direct heatsink attachment for high-power density layouts. |
| Integrated body diode | 62 ns trr and 60 nC Qr allow use in freewheeling paths of buck, flyback, and half-bridge topologies without external diodes. |
Applications
| DC-to-DC Converters | Industrial Motor Control |
|---|---|
Use Scenario: High-current synchronous rectification in 12–48 V input isolated DC-DC modules for telecom and server PSUs. IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side low-side synchronous rectifier in forward/flyback topologies. Use Value: 5.8 mΩ RDS(on) and 24 ns td(on) reduce conduction and switching losses, improving efficiency above 94% at full load. |
Use Scenario: H-bridge or half-bridge driving of 24–48 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element controlling motor direction and PWM speed regulation. Use Value: 240 A peak drain current and 280 mJ avalanche energy tolerate stall currents and inductive kickback without failure. |
| Uninterruptible Power Supplies | Lamp & Solenoid Drivers |
Use Scenario: Battery backup switching and inverter output stage in line-interactive and online UPS systems. IC Role / Device Role / Timing Role: Bidirectional power switch managing battery charging/discharging and AC output inversion. Use Value: 175 °C max junction temperature and 0.75 K/W Rth(j-mb) sustain continuous 75 A operation under sustained overload conditions. |
Use Scenario: Solid-state replacement of mechanical relays for 12–24 V incandescent lamp dimming and 24 V solenoid actuation. IC Role / Device Role / Timing Role: On/off power switch interfacing microcontroller GPIOs to high-current loads. Use Value: Standard-level gate drive (2–4.4 V VGS(th)) ensures clean turn-on with 3.3 V or 5 V logic, eliminating external driver ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V VDS, 75 A ID, 12.5 mΩ RDS(on) - higher voltage rating but ~2× higher on-resistance. | Better suited for 60 V bus systems; less efficient at 48 V due to higher conduction loss. | Choose STP75NF75 only when 75 V blocking is required; PHP119NQ06T offers superior efficiency in 48 V and below designs. |
| IRF1404 | 40 V VDS, 162 A ID, 4.9 mΩ RDS(on) - lower voltage rating, higher current, slightly lower RDS(on). | Not suitable for 55 V surge conditions; limited to ≤40 V nominal systems like 24 V industrial controls. | Select IRF1404 for cost-sensitive 24 V applications needing ultra-low RDS(on); PHP119NQ06T provides necessary 55 V margin for 48 V telecom/UPS use. |
Compared with STP75NF75 and IRF1404, PHP119NQ06T uniquely balances 55 V blocking, 5.8 mΩ conduction loss, and 0.75 K/W thermal resistance - making it optimal for thermally constrained 48 V industrial and computing power stages where voltage margin and thermal efficiency are both critical.
Availability
PHP119NQ06T is available at Aetrix Electronics and suitable for DC-to-DC converters, uninterruptible power supplies, and industrial motor control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHP119NQ06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
The PHP119NQ06T belongs to NXP's TrenchMOS power MOSFET product line, engineered for high-efficiency, thermally robust switching in computing, communications, and industrial power conversion systems.
FAQ
What is the maximum drain-source voltage rating for PHP119NQ06T?
The PHP119NQ06T has a maximum drain-source voltage (VDS) rating of 55 V, verified per IEC 60134 absolute maximum ratings. This rating applies across the full operating junction temperature range of -55 °C to +175 °C and defines the device's safe blocking capability in 48 V bus applications with transient margin.
Does PHP119NQ06T require a gate driver IC for standard microcontroller interfacing?
No - PHP119NQ06T is a standard-level MOSFET with a gate threshold voltage (VGS(th)) of 2–4.4 V, enabling direct drive from 3.3 V or 5 V microcontroller GPIOs when sufficient gate charge (53 nC total) can be delivered. For high-frequency or high-current switching, a dedicated gate driver improves rise/fall times and reduces switching losses in the PHP119NQ06T.
What is the thermal resistance from junction to mounting base for PHP119NQ06T?
The PHP119NQ06T has a maximum thermal resistance from junction to mounting base (Rth(j-mb)) of 0.75 K/W, measured under specified test conditions. This low value reflects the TO-220AB package's direct metal mounting base connection to the drain, enabling efficient heat transfer to an external heatsink without thermal interface materials in many cases.
Can PHP119NQ06T be used in avalanche mode, and what is its rated energy?
Yes - PHP119NQ06T is rated for non-repetitive drain-source avalanche energy (EDS(AL)S) of 280 mJ under defined test conditions (VGS = 10 V, ID = 75 A, Vsup ≤55 V, unclamped, tp = 0.1 ms). This specification validates its robustness during inductive turn-off events in motor and solenoid drive circuits.
What is the source-drain diode forward voltage of PHP119NQ06T at 25 A?
The source-drain diode forward voltage (VSD) of PHP119NQ06T is 0.85–1.2 V at IS = 25 A, VGS = 0 V, and Tj = 25 °C. This parameter is critical for freewheeling path losses in half-bridge and synchronous rectifier configurations using the PHP119NQ06T.
PHP119NQ06T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 53 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2820 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP119NQ06T,127 FAQ
1.How can I place an order for PHP119NQ06T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP119NQ06T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP119NQ06T,127 reliable?
The price and inventory of PHP119NQ06T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP119NQ06T,127 is usually 5 days.
3.What payment methods are accepted for PHP119NQ06T,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP119NQ06T,127 transactions.
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4.How is shipping managed for PHP119NQ06T,127?
PHP119NQ06T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHP119NQ06T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP119NQ06T,127?
For technical support, including PHP119NQ06T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP119NQ06T,127 requirements.
6.How does Aetrix verify that PHP119NQ06T,127 is sourced from the original manufacturer or authorized distributors?
All PHP119NQ06T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP119NQ06T,127 meets industry standards.
7.What is the process for return or replacement of PHP119NQ06T,127?
All PHP119NQ06T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP119NQ06T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP119NQ06T,127 part is unused and in its original packaging.
Return procedure for PHP119NQ06T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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