NXP Semiconductors PHP129NQ04LT,127
- Part No.:
- PHP129NQ04LT,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP129NQ04LT,127.pdf
- Description:
- MOSFET N-CH 40V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:8,646
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Product details
Overview
PHP129NQ04LT from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS™ power MOSFET in TO-220AB (SOT78) package, rated for 40 V VDS, 75 A ID, and 200 W Ptot, with RDS(on) ≤ 5 mΩ at VGS = 10 V - designed for high-current DC switching in motor drives and industrial power supplies.
For engineers reviewing the PHP129NQ04LT datasheet, PHP129NQ04LT pinout, PHP129NQ04LT application, or PHP129NQ04LT equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1–2 V), low on-resistance under thermal stress, avalanche ruggedness (475 mJ), and mounting-base thermal resistance (0.75 K/W).
Technical Context
This device uses TrenchMOS™ technology to achieve enhanced conduction efficiency and fast switching dynamics. Its gate threshold voltage (1–2 V at Tj = 25 °C) enables direct interface with 3.3 V/5 V logic controllers without level-shifting circuitry.
The SOT78 (TO-220AB) package features an electrically connected mounting base tied to the drain, supporting heatsink-integrated thermal management. It delivers 240 A peak drain current (IDM) and exhibits robust unclamped inductive avalanche capability (EDS(AL)S = 475 mJ) under defined test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V maximum drain-source voltage - supports 36 V nominal bus systems with 10 % margin. |
| ID | 75 A continuous drain current at Tmb = 25 °C - enables high-power load switching without forced air cooling. |
| RDS(on) | 4.1–5 mΩ at VGS = 10 V, Tj = 25 °C - reduces conduction loss to <1.2 W at 25 A, improving thermal headroom. |
| VGS(th) | 1–2 V threshold voltage - ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIOs. |
| EDS(AL)S | 475 mJ non-repetitive avalanche energy - withstands inductive kickback in relay/motor control without external snubbers. |
| Rth(j-mb) | 0.75 K/W junction-to-mounting-base thermal resistance - allows efficient heat transfer to external heatsinks. |
| Qg(tot) | 44.2 nC total gate charge - determines driver strength requirement for <100 ns switching transitions at 25 A. |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base and 3 leads. Mounting base is electrically connected to drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; requires ≤±15 V gate-source voltage; low input capacitance (Ciss = 3965 pF) eases driver design. |
| 2 | Drain (D) | High-side power output node; internally bonded to mounting base - must be isolated from heatsink unless referenced to same potential. |
| 3 | Source (S) | Power return path and reference for gate drive; forms common node with load ground in low-side switch configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1–2 V enables direct interfacing with 3.3 V/5 V MCUs, eliminating level-shifters and reducing BOM count. |
| Ultra-low RDS(on) | 4.1 mΩ typical at 10 V gate drive minimizes I²R losses in high-current paths, critical for thermal stability in enclosed enclosures. |
| Avalanche-rated | 475 mJ unclamped inductive avalanche energy provides inherent protection against inductive transients in motor/solenoid loads. |
| TrenchMOS™ technology | Enables higher cell density and lower specific on-resistance versus planar MOSFETs, improving power density in space-constrained designs. |
| Mounting-base thermal path | 0.75 K/W Rth(j-mb) enables >150 W dissipation with modest heatsinking - suitable for industrial-grade continuous operation. |
Applications
| Motor Control Systems | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: High-current H-bridge or half-bridge driver for 24–36 V DC brushed motors in automated machinery. IC Role / Device Role / Timing Role: Low-side or high-side power switch controlling motor direction and speed via PWM. Use Value: Logic-level VGS(th) and 75 A ID allow direct MCU PWM control with minimal gate drive overhead and high current handling. |
Use Scenario: Battery charging/discharge switching and inverter output stage in line-interactive UPS units. IC Role / Device Role / Timing Role: Main DC bus switch and bidirectional power path controller in battery backup circuits. Use Value: Avalanche ruggedness (475 mJ) and low RDS(on) ensure reliable operation during grid dropouts and load transients. |
| DC-to-DC Converters | Industrial Load Switching |
|
Use Scenario: Primary-side synchronous rectifier or secondary-side switch in 40 V input isolated DC-DC modules for telecom and industrial rails. IC Role / Device Role / Timing Role: High-efficiency power switch in buck, boost, or LLC topologies operating up to 100 kHz. Use Value: Low Qg(tot) (44.2 nC) and fast switching (tr = 145 ns) reduce switching losses while maintaining ZVS/ZCS feasibility. |
Use Scenario: Solid-state replacement for electromechanical relays controlling lamps, solenoids, and heating elements in PLC I/O modules. IC Role / Device Role / Timing Role: Robust load switch with integrated body diode for freewheeling in inductive loads. Use Value: Integrated source-drain diode (VSD = 0.85–1.2 V) and 240 A peak current rating support high surge loads without external flyback diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V VDS, 75 A ID, RDS(on) = 12.5 mΩ @ 10 V - higher voltage rating but double the on-resistance. | Better suited for 48 V systems; less efficient at 24–36 V due to higher conduction loss. | Select when system bus voltage exceeds 40 V or when higher avalanche margin is required despite efficiency trade-off. |
| IRF1404ZPBF | 40 V VDS, 130 A ID, RDS(on) = 4.7 mΩ @ 10 V - higher current rating and similar on-resistance, but VGS(th) = 2–4 V. | Requires stronger gate drive for full enhancement; not guaranteed logic-level compatible at 3.3 V. | Prefer when peak current > 75 A is needed and gate drive can supply ≥4.5 V; verify VGS(th) distribution across temperature. |
Compared with STP75NF75 and IRF1404ZPBF, PHP129NQ04LT uniquely balances logic-level drivability (1–2 V threshold), ultra-low RDS(on) (≤5 mΩ), and proven 475 mJ avalanche energy - making it optimal for thermally constrained 24–36 V industrial switching where gate drive simplicity and transient robustness are prioritized.
Availability
PHP129NQ04LT is available at Aetrix Electronics and suitable for motor control systems, uninterruptible power supplies, and DC-to-DC converters requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.
Supply support for PHP129NQ04LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications.
The PHP129NQ04LT belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor drive systems.
FAQ
What is the gate-source threshold voltage range for PHP129NQ04LT?
The PHP129NQ04LT has a gate-source threshold voltage (VGS(th)) of 1–2 V at Tj = 25 °C, dropping to 0.5 V minimum at 175 °C and rising to 2.2 V maximum at −55 °C. This logic-level range ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs across its full operating temperature range.
Is PHP129NQ04LT suitable for high-frequency switching applications?
Yes - PHP129NQ04LT supports high-frequency operation with td(on) = 43 ns, tr = 145 ns, td(off) = 132 ns, and tf = 92 ns under standard test conditions. Its 44.2 nC total gate charge and 3965 pF input capacitance enable efficient switching up to ~200 kHz in hard-switched topologies when paired with appropriately sized gate drivers.
Does PHP129NQ04LT have an integrated body diode, and what are its characteristics?
Yes - PHP129NQ04LT includes an integrated source-drain body diode rated for 75 A DC forward current (IS) and 240 A peak (ISM). Its forward voltage is 0.85–1.2 V at IS = 25 A and VGS = 0 V, with reverse recovery time (trr) = 61 ns and recovered charge (Qr) = 57 nC - suitable for freewheeling in inductive loads without external diodes.
What is the thermal resistance from junction to mounting base for PHP129NQ04LT?
The PHP129NQ04LT has a maximum thermal resistance of Rth(j-mb) = 0.75 K/W from junction to mounting base. This value is measured under specified test conditions and enables effective heat transfer to externally mounted heatsinks - critical for sustaining 200 W total power dissipation in industrial environments.
Can PHP129NQ04LT be used in avalanche mode, and what is its rated energy?
Yes - PHP129NQ04LT is rated for non-repetitive unclamped inductive avalanche with EDS(AL)S = 475 mJ under defined conditions (ID = 69 A, tp = 0.27 ms, VDD ≤ 40 V, RGS = 50 Ω, VGS = 10 V, starting Tj = 25 °C). This specification validates its robustness in motor commutation and relay driving where inductive spikes occur.
PHP129NQ04LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 44.2 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3965 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP129NQ04LT,127 FAQ
1.How can I place an order for PHP129NQ04LT,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP129NQ04LT,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP129NQ04LT,127 reliable?
The price and inventory of PHP129NQ04LT,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP129NQ04LT,127 is usually 5 days.
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Once your PHP129NQ04LT,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP129NQ04LT,127?
For technical support, including PHP129NQ04LT,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP129NQ04LT,127 requirements.
6.How does Aetrix verify that PHP129NQ04LT,127 is sourced from the original manufacturer or authorized distributors?
All PHP129NQ04LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP129NQ04LT,127 meets industry standards.
7.What is the process for return or replacement of PHP129NQ04LT,127?
All PHP129NQ04LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP129NQ04LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP129NQ04LT,127 part is unused and in its original packaging.
Return procedure for PHP129NQ04LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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