NXP Semiconductors PHP152NQ03LTA,127
- Part No.:
- PHP152NQ03LTA,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP152NQ03LTA,127.pdf
- Description:
- MOSFET N-CH 25V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
PHP152NQ03LTA from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel TrenchMOS™ power MOSFET in TO-220AB (SOT78) package, rated for VDS = 25 V, ID = 75 A (DC), RDS(on) ≤ 4 mΩ at VGS = 10 V and Tj = 25 °C, and Ptot = 150 W - optimized for high-efficiency DC-to-DC converters and switched-mode power supplies.
For engineers reviewing the PHP152NQ03LTA datasheet, PHP152NQ03LTA pinout, PHP152NQ03LTA application, or PHP152NQ03LTA equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1–2 V), low thermal resistance (Rth(j-mb) = 1 K/W), avalanche ruggedness (EDS(AL)S = 560 mJ), and surface-mount vs. through-hole package variants.
Technical Context
This device uses TrenchMOS™ technology to achieve low RDS(on) and low gate charge (Qg(tot) = 36 nC), enabling fast switching with reduced conduction and switching losses. Its logic-level threshold (VGS(th) = 1.5 V typ.) allows direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.
The integrated source-drain diode supports synchronous rectification and freewheeling operation, with VSD = 0.85–1.2 V at IS = 25 A and trr = 50 ns. Thermal design leverages the mounting base (connected to drain) for efficient heat transfer, with Rth(j-mb) = 1 K/W and Rth(j-a) = 60 K/W in vertical still air.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - maximum continuous drain-source voltage; defines safe operating range in low-voltage power rails (e.g., 12 V/24 V systems). |
| RDS(on) | 3.4 mΩ (typ.) at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 50 A, critical for high-current DC-DC stages. |
| ID (DC) | 75 A at Tmb = 25 °C - supports high-current load switching in SMPS primary/secondary side or motor drive half-bridges. |
| Qg(tot) | 36 nC - low total gate charge reduces driver power demand and switching transition time, improving efficiency at >100 kHz. |
| Rth(j-mb) | 1 K/W - junction-to-mounting-base thermal resistance enables direct heatsink coupling for stable thermal management under sustained load. |
| EDS(AL)S | 560 mJ - non-repetitive avalanche energy rating ensures robustness against inductive switching transients in unclamped loads. |
Pinout & Package
PHP152NQ03LTA is housed in TO-220AB plastic single-ended package (SOT78), featuring a metal mounting base electrically connected to the drain terminal for mechanical attachment and thermal dissipation. Pin 2 is internally connected to the mounting base and not accessible externally.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; logic-level compatible (VGS(th) = 1.5 V typ.), requires <36 nC charge for full enhancement. |
| 2 | Drain (D) / Mounting Base | High-current power output node; electrically tied to metal tab - must be isolated from PCB ground unless drain-referenced topology. |
| 3 | Source (S) | Power return path; referenced to gate drive; forms common node for current sensing and feedback in buck/boost topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate threshold | VGS(th) = 1–2 V enables direct interface with 3.3 V/5 V MCUs and PWM controllers without gate drivers. |
| Ultra-low RDS(on) | 3.4 mΩ @ 10 V ensures minimal I²R loss in high-current paths - critical for >95% efficiency in 12 V input converters. |
| TrenchMOS™ architecture | Optimized cell density and trench geometry deliver lower gate charge and higher figure-of-merit (RDS(on) × Qg) than planar MOSFETs. |
| Avalanche-rated | 560 mJ unclamped inductive energy handling supports reliable operation in flyback, forward, and LLC resonant converters. |
| Low thermal resistance | Rth(j-mb) = 1 K/W allows >100 W power dissipation with modest heatsinking - simplifies thermal design in space-constrained PSUs. |
Applications
| DC-DC Buck Converter | Switched-Mode Power Supply (SMPS) |
|---|---|
|
Use Scenario: High-current step-down conversion from 12 V to 3.3 V/5 V in server VRMs or telecom power modules. IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, driven by dedicated gate controller or MCU PWM. Use Value: 3.4 mΩ RDS(on) minimizes conduction loss at 50–75 A loads, while 36 nC Qg enables efficient 300–500 kHz operation. |
Use Scenario: Primary-side switching in 200–500 W AC-DC adapters or industrial open-frame PSUs. IC Role / Device Role / Timing Role: High-side or low-side power switch in forward, flyback, or active-clamp topologies. Use Value: 560 mJ avalanche energy rating withstands transformer leakage inductance spikes; 25 V VDS suits secondary-side synchronous rectification. |
| Motor Drive Half-Bridge | Hot-Swap / Load Switch |
|
Use Scenario: Low-voltage BLDC or stepper motor phase switching in battery-powered tools or robotics. IC Role / Device Role / Timing Role: N-channel high-side or low-side switch in H-bridge configuration, controlled via gate driver IC. Use Value: Logic-level VGS(th) allows compact gate drive design; 75 A DC rating supports peak motor currents up to 100 A with proper heatsinking. |
Use Scenario: Inrush-limited power sequencing in FPGA, ASIC, or GPU power domains. IC Role / Device Role / Timing Role: Single-pole power switch with external RC gate control for soft-start and overcurrent protection. Use Value: Low RDS(on) limits voltage drop during steady-state operation; integrated body diode enables reverse-current blocking when used with external Schottky. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | VDS = 40 V, RDS(on) = 4.8 mΩ @ 10 V, Qg = 131 nC - higher voltage rating but significantly higher gate charge and on-resistance. | Better suited for 24–36 V input systems; less efficient at high-frequency, high-current operation due to higher Qg. | Select IRF1404PBF only if 40 V VDS margin is required; PHP152NQ03LTA offers superior efficiency in ≤25 V rails. |
| STP75NF25 | VDS = 25 V, RDS(on) = 4.5 mΩ @ 10 V, Qg = 100 nC - same voltage rating but 2.8× higher gate charge than PHP152NQ03LTA. | Compatible in DC-DC and SMPS roles but demands stronger gate drivers and exhibits slower switching transitions. | Prefer PHP152NQ03LTA for high-frequency designs (>200 kHz); STP75NF25 may be acceptable where gate drive strength is abundant and frequency is low. |
Compared with IRF1404PBF and STP75NF25, PHP152NQ03LTA delivers the lowest RDS(on) × Qg figure-of-merit among these 25 V logic-level MOSFETs, enabling higher efficiency and smaller gate drivers in compact, high-current power stages.
Availability
PHP152NQ03LTA is available at Aetrix Electronics and suitable for DC-to-DC converters, switched-mode power supplies, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHP152NQ03LTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications.
The PHP152NQ03LTA belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in low-voltage power conversion systems.
FAQ
What is the maximum continuous drain current rating for PHP152NQ03LTA?
The PHP152NQ03LTA is rated for 75 A DC continuous drain current at Tmb = 25 °C with VGS = 10 V. Derating applies above 25 °C mounting base temperature per Figure 2 in the datasheet; at Tmb = 100 °C, it maintains 75 A capability due to its low RDS(on) and thermal design. Actual usable current depends on PCB layout, heatsinking, and ambient conditions.
Does PHP152NQ03LTA support logic-level gate drive?
Yes, PHP152NQ03LTA features a logic-level gate threshold voltage (VGS(th)) of 1–2 V typical at Tj = 25 °C, allowing full enhancement with standard 3.3 V or 5 V microcontroller outputs. This eliminates the need for external level shifters or high-side gate drivers in many low-voltage power stage designs.
What is the thermal resistance from junction to mounting base for PHP152NQ03LTA?
The PHP152NQ03LTA has a specified Rth(j-mb) of 1 K/W, measured from silicon junction to the metal mounting base. This low value enables effective heat transfer to an external heatsink, supporting up to 150 W total power dissipation at Tmb = 25 °C - critical for thermally constrained power supply designs.
Is PHP152NQ03LTA avalanche-rated, and what is its energy rating?
Yes, PHP152NQ03LTA is fully avalanche-rated with a non-repetitive drain-source avalanche energy (EDS(AL)S) of 560 mJ under specified test conditions (unclamped inductive load, ID = 75 A, VDD ≤ 25 V). This rating ensures robustness against transient voltage spikes in inductive switching applications like flyback and forward converters.
What package type does PHP152NQ03LTA use, and how is pin 2 configured?
PHP152NQ03LTA uses the TO-220AB plastic single-ended package (SOT78), with three leads and a metal mounting base. Pin 2 is internally connected to the mounting base (drain) and is not accessible as an external lead - only pins 1 (gate) and 3 (source) are electrically functional terminals; the base serves as both thermal path and drain connection.
PHP152NQ03LTA,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3140 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP152NQ03LTA,127 FAQ
1.How can I place an order for PHP152NQ03LTA,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP152NQ03LTA,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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5.How can I obtain technical support or documentation for PHP152NQ03LTA,127?
For technical support, including PHP152NQ03LTA,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP152NQ03LTA,127 requirements.
6.How does Aetrix verify that PHP152NQ03LTA,127 is sourced from the original manufacturer or authorized distributors?
All PHP152NQ03LTA,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP152NQ03LTA,127 meets industry standards.
7.What is the process for return or replacement of PHP152NQ03LTA,127?
All PHP152NQ03LTA,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP152NQ03LTA,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP152NQ03LTA,127 part is unused and in its original packaging.
Return procedure for PHP152NQ03LTA,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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