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NXP Semiconductors PHP160NQ08T,127
- Part No.:
- PHP160NQ08T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP160NQ08T,127.pdf
- Description:
- MOSFET N-CH 75V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,406
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Product details
Overview
PHP160NQ08T,127 from NXP Semiconductors is a standard-level N-channel TrenchMOS power MOSFET in D2PAK (SOT404) package, designed for high-current switching in DC-DC converters and industrial motor control. It delivers 75 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 4.8 mΩ typical RDS(on) at VGS = 10 V and Tj = 25 °C, enabling low conduction loss in 48 V system rails.
For engineers reviewing the PHP160NQ08T,127 datasheet, PHP160NQ08T,127 pinout, PHP160NQ08T,127 application, or PHP160NQ08T,127 equivalent, key selection criteria include its standard-level gate drive compatibility (VGS(th) = 2–4 V), avalanche ruggedness (560 mJ unclamped), and thermal resistance of 0.5 K/W junction-to-mounting-base - critical for thermally constrained high-power designs.
Technical Context
This device uses TrenchMOS technology to achieve low RDS(on) while maintaining robust safe operating area (SOA) up to 75 V and 240 A peak pulsed current. Its gate charge profile (QG(tot) = 91 nC, QGD = 28 nC) supports efficient hard-switching in synchronous buck topologies with moderate gate drive strength.
The integrated source-drain diode exhibits 0.81 V typical forward voltage at 25 A and 25 °C, with 86 ns reverse recovery time and 253 nC recovered charge - suitable for freewheeling in non-isolated converters but not optimized for high-frequency ZVS applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V maximum drain-source voltage - supports 48 V nominal bus systems with 50 % safety margin against transients. |
| RDS(on) | 4.8 mΩ typ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1.5 W conduction loss at 50 A DC, reducing heatsink requirements. |
| ID (continuous) | 75 A @ Tmb = 25 °C - rated for high-current output stages in server VRMs and UPS inverters. |
| Ptot | 300 W @ Tmb = 25 °C - requires direct mounting to copper plane or heatsink for thermal management. |
| Rth(j-mb) | 0.5 K/W max - allows junction temperature rise of ≤37.5 °C above mounting base at 75 W dissipation. |
| QG(tot) | 91 nC typical - determines gate driver current requirement (~1.8 A avg for 50 ns turn-on with 10 Ω gate resistor). |
| EDS(AL)S | 560 mJ unclamped avalanche energy - provides single-pulse fault tolerance during inductive load switching. |
Pinout & Package
PHP160NQ08T,127 is housed in a plastic single-ended surface-mounted D2PAK package (SOT404), featuring a large metal mounting base electrically connected to the drain terminal for enhanced thermal and electrical performance. Pin 2 is internally connected to the mounting base and cannot be externally accessed.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring 10 V for full enhancement; threshold range 2–4 V at 25 °C enables standard logic-level drive. |
| 2 (D) | Drain | Internally bonded to mounting base; primary high-side switching node - must be isolated from PCB ground unless used as common drain configuration. |
| 3 (S) | Source | Power return path and reference for gate drive; connects to low-side switch node or ground in common-source topology. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 4.8 mΩ typical at 25 °C enables >95 % efficiency in 48 V/50 A DC-DC stages with minimal thermal derating. |
| Standard-level gate drive | VGS(th) = 2–4 V ensures reliable turn-on with 5 V or 3.3 V microcontroller outputs without level-shifting circuitry. |
| Avalanche-rated | 560 mJ unclamped energy rating permits operation in inductive switching circuits without external snubbers under defined fault conditions. |
| Thermally optimized package | 0.5 K/W Rth(j-mb) allows direct thermal coupling to heatsinks or copper planes, supporting sustained 75 A operation with proper board layout. |
| Integrated body diode | 25 A continuous source current capability with 0.81 V VSD supports freewheeling in half-bridge and synchronous rectifier configurations. |
Applications
| DC-DC Converters | Industrial Motor Control |
|---|---|
Use Scenario: High-current synchronous buck converter in telecom power supply delivering 12 V/60 A from 48 V input. IC Role / Device Role / Timing Role: Low-side power switch handling continuous 60 A current with fast switching transitions. Use Value: 4.8 mΩ RDS(on) limits conduction loss to 1.73 W, reducing thermal stress and enabling compact heatsink design. |
Use Scenario: H-bridge driver for 24 V brushed DC motor in factory automation actuator. IC Role / Device Role / Timing Role: High-current quadrant switch controlling bidirectional motor current up to 75 A peak. Use Value: 240 A pulsed drain current rating and 560 mJ avalanche energy ensure robustness against motor stall and inductive kickback. |
| Uninterruptible Power Supplies | LED/Lamp/Solenoid Drivers |
Use Scenario: Inverter stage in 1 kVA online UPS converting 380 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: Output bridge switch operating in hard-switched PWM mode at 16–20 kHz. Use Value: 91 nC total gate charge enables efficient gate driving with standard 2 A peak drivers, minimizing switching losses at 20 kHz. |
Use Scenario: High-side load switch for 48 V LED arrays or solenoid valves in building control systems. IC Role / Device Role / Timing Role: Robust on/off control element with integrated body diode for inductive load flyback. Use Value: 0.81 V source-drain forward voltage and 86 ns trr reduce switching losses and EMI during load turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP160NF08 | Higher RDS(on) (6.5 mΩ typ), same VDS/ID ratings, TO-220 package instead of D2PAK. | Larger footprint and higher Rth(j-a); less suitable for high-density SMT layouts requiring low-profile mounting. | Prefer PHP160NQ08T,127 when board space, thermal coupling to PCB, or automated assembly are priorities. |
| IRFP4668 | Lower RDS(on) (3.2 mΩ typ), higher QG (130 nC), TO-247 package, 100 V VDS. | Over-specified voltage rating increases cost and gate drive demand; better suited for 72 V+ systems. | Choose PHP160NQ08T,127 for cost-sensitive 48 V applications where 75 V rating and 91 nC QG offer optimal balance. |
Compared with STP160NF08 and IRFP4668, PHP160NQ08T,127 delivers superior thermal performance via its D2PAK mounting base, lower gate charge than IRFP4668 for faster switching, and tighter RDS(on) than STP160NF08 - making it the preferred choice for space-constrained, high-current 48 V industrial power stages.
Availability
PHP160NQ08T,127 is available at Aetrix Electronics and suitable for DC-DC converters, uninterruptible power supplies, and industrial motor control applications requiring stable component supply across multi-year production cycles.
Supply support for PHP160NQ08T,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communication markets.
PHP160NQ08T,127 belongs to NXP's TrenchMOS power MOSFET product line, engineered for high-efficiency, high-reliability switching in computing, communications, and industrial power conversion systems.
FAQ
What is the maximum continuous drain current rating for PHP160NQ08T,127?
The PHP160NQ08T,127 is rated for 75 A continuous drain current at mounting base temperature (Tmb) of 25 °C. At Tmb = 100 °C, the current rating remains 75 A per the datasheet limiting values table, supported by its robust SOA and 0.5 K/W thermal resistance to the mounting base. Derating is required above 100 °C based on Figure 1.
Does PHP160NQ08T,127 support 5 V gate drive?
Yes, PHP160NQ08T,127 supports 5 V gate drive due to its standard-level gate threshold voltage (VGS(th) = 2–4 V at 25 °C). While full enhancement (RDS(on) = 4.8 mΩ) is specified at VGS = 10 V, the device turns on sufficiently at 5 V for many medium-duty switching applications - though RDS(on) will increase significantly compared to 10 V operation.
What is the avalanche energy rating of PHP160NQ08T,127?
The PHP160NQ08T,127 has a non-repetitive drain-source avalanche energy rating of 560 mJ under specified test conditions (VGS = 10 V, Tj(init) = 25 °C, ID = 75 A, Vsup ≤ 75 V, unclamped, tp = 0.15 ms, RGS = 50 Ω). This rating applies to single-pulse inductive energy absorption and is not intended for repetitive avalanche operation.
Is PHP160NQ08T,127 pin-compatible with other D2PAK MOSFETs?
PHP160NQ08T,127 uses the standard SOT404 (D2PAK) outline with 3 leads (one cropped), matching industry-standard D2PAK mechanical dimensions. Its pinout - Gate (pin 1), Drain/mounting base (pin 2), Source (pin 3) - is consistent with most N-channel D2PAK MOSFETs, but functional compatibility depends on electrical specifications; always verify VDS, RDS(on), and QG before substitution.
What is the thermal resistance from junction to mounting base for PHP160NQ08T,127?
The maximum thermal resistance from junction to mounting base (Rth(j-mb)) for PHP160NQ08T,127 is 0.5 K/W, as specified in Table 5 of the datasheet. This value assumes proper soldering to a copper plane or heatsink and enables precise junction temperature estimation using Tj = Tmb + (Pdiss × Rth(j-mb)), critical for reliability validation.
PHP160NQ08T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 91 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5585 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP160NQ08T,127 FAQ
1.How can I place an order for PHP160NQ08T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP160NQ08T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP160NQ08T,127 reliable?
The price and inventory of PHP160NQ08T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP160NQ08T,127 is usually 5 days.
3.What payment methods are accepted for PHP160NQ08T,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP160NQ08T,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHP160NQ08T,127?
PHP160NQ08T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHP160NQ08T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP160NQ08T,127?
For technical support, including PHP160NQ08T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP160NQ08T,127 requirements.
6.How does Aetrix verify that PHP160NQ08T,127 is sourced from the original manufacturer or authorized distributors?
All PHP160NQ08T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP160NQ08T,127 meets industry standards.
7.What is the process for return or replacement of PHP160NQ08T,127?
All PHP160NQ08T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP160NQ08T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP160NQ08T,127 part is unused and in its original packaging.
Return procedure for PHP160NQ08T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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