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NXP Semiconductors PHP165NQ08T,127
- Part No.:
- PHP165NQ08T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP165NQ08T,127.pdf
- Description:
- MOSFET N-CH 75V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,094
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Product details
Overview
PHP165NQ08T from NXP Semiconductors is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, designed for high-current switching in secondary-side AC/DC converters and Class D amplifiers. It delivers 75 V VDS, 75 A continuous drain current at Tmb = 25 °C, and ultra-low 4.1 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C.
For engineers reviewing the PHP165NQ08T datasheet, PHP165NQ08T pinout, PHP165NQ08T application, or PHP165NQ08T equivalent, key selection criteria include its 0.5 K/W junction-to-mounting-base thermal resistance, 56 nC recovered charge for synchronous rectification, and avalanche ruggedness of 500 mJ under unclamped inductive switching.
Technical Context
This N-channel enhancement-mode FET uses TrenchMOS silicon technology to achieve low conduction loss and fast switching with minimal gate charge (165 nC total, 50 nC QGD). Its gate threshold voltage ranges from 2.0 V (typ.) to 4.4 V (max.) across temperature, enabling robust drive margin in high-noise industrial environments.
The device integrates a low-VSD (0.8 V typ. at 25 A) source-drain diode optimized for reverse recovery (trr = 49 ns, Qr = 56 nC), supporting efficient synchronous rectification in DC/DC and AC/DC topologies without external Schottky diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - Maximum blocking voltage for use in 48 V input DC/DC and 24 V bus motion control systems. |
| RDS(on) | 4.1 mΩ (typ.) at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 75 A, reducing heatsink requirements. |
| QG(tot) | 165 nC - Total gate charge determines driver strength needed; supports 100 kHz+ switching with moderate gate drivers. |
| trr / Qr | 49 ns / 56 nC - Low reverse recovery metrics minimize switching loss and EMI in hard-switched synchronous rectifiers. |
| Rth(j-mb) | 0.5 K/W - Thermal resistance to mounting base enables direct heatsink attachment for 250 W continuous dissipation. |
| VGS(th) | 2.0–4.4 V - Gate threshold range ensures reliable turn-on with 5 V logic-level gate drivers while avoiding spurious turn-on. |
| EDS(AL)S | 500 mJ - Non-repetitive avalanche energy rating supports robust operation during load dump or inductive fault events. |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted base and one mounting hole. Dimensions per Figure 16: 15.2–16.0 mm length, 9.7–10.3 mm width, 3.5–3.8 mm height, 2.54 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring 10 V drive for full enhancement; 20 V absolute max rating prevents overvoltage damage. |
| 2 (D) | Drain | Main high-side switching node; electrically connected to metal mounting base for thermal and electrical path to heatsink. |
| 3 (S) | Source | Power return and reference node; connects to PCB ground plane and provides gate drive return path. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 4.1 mΩ typ. at 25 °C enables high-efficiency power conversion with minimal I²R loss in high-current paths. |
| Fast switching | 48 ns td(on), 67 ns tr, 144 ns td(off), 74 ns tf support high-frequency operation up to 500 kHz with controlled EMI. |
| Low Qr | 56 nC recovered charge reduces body diode conduction loss and improves efficiency in synchronous rectifier applications. |
| Avalanche ruggedness | 500 mJ non-repetitive energy rating allows safe operation during transient overloads without external snubbers. |
| TrenchMOS technology | Enables superior cell density and lower on-resistance per die area compared to planar MOSFETs. |
Applications
| AC/DC Secondary-Side Rectification | Class D Audio Amplifiers |
|---|---|
Use Scenario: Used as synchronous rectifier in LLC resonant converter secondary side operating at 100–300 kHz. IC Role / Device Role / Timing Role: Power switch replacing Schottky diode to reduce forward voltage drop and improve efficiency. Use Value: 0.8 V VSD and 49 ns trr minimize conduction and switching losses, enabling >94% efficiency at full load. |
Use Scenario: Output half-bridge switch in 100 W+ Class D amplifier driving 4 Ω speakers. IC Role / Device Role / Timing Role: High-current, low-loss output stage switch handling peak currents up to 400 A. Use Value: 75 A continuous rating and 400 A pulsed capability ensure headroom for dynamic audio peaks without thermal derating. |
| Isolated DC/DC Converters | Motion Control Drives |
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated flyback or forward converter. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer through transformer primary winding. Use Value: 75 V VDS and 500 mJ avalanche rating tolerate reflected voltage spikes and maintain reliability under line transients. |
Use Scenario: H-bridge leg in 24 V BLDC motor controller for industrial automation. IC Role / Device Role / Timing Role: High-side and low-side switching element in PWM-driven motor phase legs. Use Value: 0.5 K/W Rth(j-mb) and 250 W Ptot allow sustained 75 A operation with forced-air heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V VDS, 75 A ID, but higher RDS(on) = 10.5 mΩ and no specified Qr or trr. | Lacks documented reverse recovery performance; less suitable for synchronous rectification. | Prefer PHP165NQ08T where low Qr and fast trr are critical for high-frequency efficiency. |
| IRF1404Z | 40 V VDS, 180 A ID, RDS(on) = 3.8 mΩ, but incompatible voltage rating for 48 V+ systems. | Not rated for 75 V operation; unsuitable for AC/DC secondary-side or 48 V DC/DC inputs. | Select PHP165NQ08T for 75 V systems requiring both voltage margin and low RDS(on). |
Compared with STP75NF75 and IRF1404Z, the PHP165NQ08T uniquely balances 75 V rating, 4.1 mΩ on-resistance, and 56 nC recovered charge-making it optimal for high-efficiency, high-frequency synchronous rectification where voltage margin and diode performance are jointly critical.
Availability
PHP165NQ08T is available at Aetrix Electronics and suitable for AC/DC converters, Class D amplifiers, and motion control drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHP165NQ08T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
The PHP165NQ08T belongs to NXP's SiliconMAX TrenchMOS family, engineered specifically for high-current, high-efficiency power switching in industrial power supplies and motor control systems.
FAQ
What is the maximum continuous drain current rating for PHP165NQ08T?
The PHP165NQ08T supports 75 A continuous drain current at mounting base temperature (Tmb) = 25 °C with VGS = 10 V. At Tmb = 100 °C, the rating remains 75 A per Figure 1, reflecting its robust thermal design. Derating applies above 100 °C per the normalized current curve.
Does PHP165NQ08T support logic-level gate drive?
No, PHP165NQ08T is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement. Its VGS(th) ranges from 2.0 V (typ.) to 4.4 V (max.), so 5 V logic signals will not fully turn it on-resulting in high RDS(on) and excessive heating. PHP165NQ08T must be driven with a 10–15 V gate supply.
What is the thermal resistance from junction to mounting base for PHP165NQ08T?
The PHP165NQ08T has a maximum thermal resistance of Rth(j-mb) = 0.5 K/W from junction to mounting base, measured per Figure 4. This low value enables efficient heat transfer to an external heatsink, supporting 250 W total power dissipation at Tmb = 25 °C.
Can PHP165NQ08T be used in avalanche mode?
Yes, PHP165NQ08T is rated for non-repetitive avalanche operation with EDS(AL)S = 500 mJ (VGS = 10 V, ID = 75 A, Vsup = 15 V, unclamped). This makes PHP165NQ08T suitable for inductive load switching where voltage spikes may exceed VDS, provided energy per event stays within limit.
What package type does PHP165NQ08T use, and is it lead-free?
PHP165NQ08T uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and one mounting hole. Per NXP documentation and JEDEC compliance, the PHP165NQ08T is RoHS-compliant and lead-free, with termination finish specified as matte tin (Sn) on copper leads.
PHP165NQ08T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 165 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8250 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP165NQ08T,127 FAQ
1.How can I place an order for PHP165NQ08T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP165NQ08T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP165NQ08T,127 reliable?
The price and inventory of PHP165NQ08T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP165NQ08T,127 is usually 5 days.
3.What payment methods are accepted for PHP165NQ08T,127?
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4.How is shipping managed for PHP165NQ08T,127?
PHP165NQ08T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHP165NQ08T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP165NQ08T,127?
For technical support, including PHP165NQ08T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP165NQ08T,127 requirements.
6.How does Aetrix verify that PHP165NQ08T,127 is sourced from the original manufacturer or authorized distributors?
All PHP165NQ08T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP165NQ08T,127 meets industry standards.
7.What is the process for return or replacement of PHP165NQ08T,127?
All PHP165NQ08T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP165NQ08T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP165NQ08T,127 part is unused and in its original packaging.
Return procedure for PHP165NQ08T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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