NXP Semiconductors PHP176NQ04T,127
- Part No.:
- PHP176NQ04T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP176NQ04T,127.pdf
- Description:
- MOSFET N-CH 40V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:8,665
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Product details
Overview
PHP176NQ04T,127 from NXP Semiconductors is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 40 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 250 W total power dissipation. It delivers 3.8 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and is qualified for industrial, computing, and UPS applications requiring robust conduction efficiency and standard gate drive compatibility.
For engineers reviewing the PHP176NQ04T,127 datasheet, PHP176NQ04T,127 pinout, PHP176NQ04T,127 application, or PHP176NQ04T,127 equivalent, key selection criteria include its low on-resistance, avalanche energy rating of 560 mJ, thermal resistance of 0.6 K/W (junction-to-mounting-base), gate charge profile (QG(tot) = 68.9 nC), and suitability for high-current DC-DC converters and motor control circuits with heatsink mounting.
Technical Context
This MOSFET uses TrenchMOS technology to achieve low RDS(on) while maintaining stable threshold voltage (VGS(th) = 2–4 V at Tj = 25 °C) and controlled dynamic characteristics including QGD = 22.2 nC and Ciss = 3620 pF. Its gate is compatible with standard 10 V logic-level drivers, eliminating need for level-shifting circuitry.
The device features an integrated source-drain diode with VSD = 0.85–1.2 V at IS = 25 A and fast reverse recovery (trr = 68 ns, Qr = 62 nC), enabling use in synchronous rectification and freewheeling paths without external diodes in many topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage; defines upper limit for switch node voltage in buck, boost, and half-bridge topologies. |
| RDS(on) | 3.8 mΩ (typ) at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 50 A, critical for high-efficiency power stages. |
| ID (continuous) | 75 A at Tmb = 25 °C - Supports high-current loads such as solenoid drivers and DC motor H-bridges with appropriate heatsinking. |
| EDS(AL)S | 560 mJ - Non-repetitive unclamped avalanche energy; allows safe operation during inductive turn-off transients without snubbers. |
| Rth(j-mb) | 0.6 K/W - Junction-to-mounting-base thermal resistance enables direct heatsink coupling for sustained 250 W dissipation. |
| QG(tot) | 68.9 nC - Total gate charge determines driver strength requirement; compatible with common 1–2 A peak gate drivers. |
| VGS(th) | 2–4 V at Tj = 25 °C - Ensures reliable turn-on with standard 5 V or 10 V logic, with margin against false triggering at elevated temperature. |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base electrically connected to drain. Dimensions per Figure 14: 15.2–16.0 mm length, 9.7–10.3 mm width, 4.1–4.7 mm height, 3.30–3.8 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤20 V gate-source voltage; driven by standard logic-level PWM controllers. |
| 2 (D) | Drain | Main high-side switching node; electrically tied to mounting base for low-inductance heatsink connection. |
| 3 (S) | Source | Power return path and reference for gate drive; used as common node in low-side switch configurations. |
| Mounting base (mb) | Drain tie | Electrically connected to drain pin; must be isolated from chassis unless drain is referenced to system ground. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 3.8 mΩ typical enables <1.5 W conduction loss at 60 A, reducing thermal design burden in high-current power supplies. |
| Standard-level gate drive | Operates fully enhanced with 10 V gate drive, eliminating need for gate boosters or charge pumps in 12 V or 24 V control systems. |
| Avalanche ruggedness | 560 mJ non-repetitive energy rating supports reliable operation during inductive load switching without external clamping. |
| Integrated source-drain diode | VSD = 0.85 V at 25 A enables use as freewheeling element in buck converters and motor drives without discrete diode. |
| Thermal performance | 0.6 K/W junction-to-mounting-base resistance allows direct attachment to heatsinks for stable 250 W continuous operation. |
Applications
| DC-DC Converters | Motor Control |
|---|---|
Use Scenario: High-current synchronous buck converter in server VRMs or telecom power modules. IC Role / Device Role / Timing Role: Low-side power switch handling up to 75 A continuous current with minimal conduction loss. Use Value: 3.8 mΩ RDS(on) reduces I²R losses below 1.7 W at 65 A, improving efficiency and easing thermal management. | Use Scenario: H-bridge driver for 24 V brushed DC motors in industrial automation equipment. IC Role / Device Role / Timing Role: High-current quadrant switch enabling bidirectional motor control and regenerative braking via internal body diode. Use Value: 68 ns reverse recovery time and 62 nC recovered charge minimize switching loss during commutation. |
| Uninterruptible Power Supplies | Industrial Load Switching |
Use Scenario: Inverter stage and battery charging path in line-interactive UPS systems. IC Role / Device Role / Timing Role: Bidirectional power switch supporting both AC-DC rectification and DC-AC inversion functions. Use Value: 40 V VDS rating accommodates 36 V nominal battery stacks with headroom for surge conditions. | Use Scenario: Solid-state relay replacement for lamps, solenoids, and heating elements in PLC output modules. IC Role / Device Role / Timing Role: High-reliability power switch with avalanche capability for inductive load turn-off protection. Use Value: 560 mJ avalanche energy rating prevents failure during solenoid de-energization transients without snubber networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | Higher RDS(on) (4.7 mΩ), same VDS (40 V), higher QG (131 nC), TO-220 package | Requires stronger gate driver; less efficient at high current due to +24 % conduction loss | Acceptable where gate drive strength is available and marginal efficiency loss is acceptable. |
| STP75NF75 | Higher VDS (75 V), similar RDS(on) (7.5 mΩ), lower ID (75 A), TO-220 package | Over-specified voltage rating increases cost and capacitance; higher RDS(on) raises conduction loss | Only suitable if 75 V rating is required for future-proofing or transient margin beyond 40 V systems. |
Compared with IRF1404PBF and STP75NF75, PHP176NQ04T,127 offers the lowest RDS(on) and best thermal resistance among TO-220 N-channel 40 V MOSFETs, delivering superior conduction efficiency and heatsink-coupled thermal performance for high-current industrial and computing power stages.
Availability
PHP176NQ04T,127 is available at Aetrix Electronics and suitable for DC-DC converters, uninterruptible power supplies, and industrial motor control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHP176NQ04T,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions, automotive processors, and high-performance analog/power devices.
The PHP176NQ04T,127 belongs to NXP's TrenchMOS power MOSFET product line, engineered for high-current, high-efficiency switching in computing, communications, and industrial power conversion systems where low on-resistance and avalanche ruggedness are critical.
FAQ
What is the maximum continuous drain current rating for PHP176NQ04T,127?
The PHP176NQ04T,127 is rated for 75 A continuous drain current at mounting base temperature (Tmb) = 25 °C with adequate heatsinking. At Tmb = 100 °C, the derated current remains 75 A per Figure 1 in the datasheet, confirming robust thermal design for high-power industrial applications.
Does PHP176NQ04T,127 require a gate driver with negative voltage capability?
No - PHP176NQ04T,127 has a gate-source voltage rating of ±20 V and operates fully enhanced with 10 V gate drive. Its VGS(th) range (2–4 V at 25 °C) ensures reliable turn-on using standard 5 V or 10 V logic-level drivers without negative gate biasing.
Is PHP176NQ04T,127 suitable for synchronous rectification in DC-DC converters?
Yes - PHP176NQ04T,127 supports synchronous rectification via its low RDS(on) (3.8 mΩ) and fast source-drain diode (trr = 68 ns, Qr = 62 nC). Its integrated body diode enables efficient freewheeling in buck converters when used as the low-side switch.
What is the thermal resistance from junction to mounting base for PHP176NQ04T,127?
The PHP176NQ04T,127 has a maximum thermal resistance of Rth(j-mb) = 0.6 K/W from junction to mounting base, as specified in Table 5. This value enables direct heatsink mounting and supports 250 W continuous power dissipation under proper thermal interface conditions.
Can PHP176NQ04T,127 replace older N-channel MOSFETs like IRF1404 in existing designs?
PHP176NQ04T,127 is a functional alternative to IRF1404 in TO-220-based designs, offering lower RDS(on) (3.8 mΩ vs. 4.7 mΩ) and better thermal resistance (0.6 K/W vs. ~1.0 K/W). Pinout is identical, but layout review is recommended to confirm gate drive stability given reduced QG (68.9 nC vs. 131 nC).
PHP176NQ04T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 68.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3620 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP176NQ04T,127 FAQ
1.How can I place an order for PHP176NQ04T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP176NQ04T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that PHP176NQ04T,127 is sourced from the original manufacturer or authorized distributors?
All PHP176NQ04T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP176NQ04T,127 meets industry standards.
7.What is the process for return or replacement of PHP176NQ04T,127?
All PHP176NQ04T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP176NQ04T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP176NQ04T,127 part is unused and in its original packaging.
Return procedure for PHP176NQ04T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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