Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PHP18NQ10T,127

Name: PHP18NQ10T,127
Brand: Nexperia USA Inc.
SKU: PHP18NQ10T,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PHP18NQ10T,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PHP18NQ10T,127.pdf

Description:: MOSFET N-CH 100V 18A TO220AB

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,660

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PHP18NQ10T from Nexperia is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78) package, designed for high-efficiency power switching in DC-DC converters and switched-mode power supplies. It delivers 100 V drain-source voltage rating, 18 A continuous drain current at T_mb = 25 °C, and 79 W total power dissipation with low R_DS(on) of 80–90 mΩ at V_GS = 10 V and T_j = 25 °C.

For engineers reviewing the PHP18NQ10T datasheet, PHP18NQ10T pinout, PHP18NQ10T application, or PHP18NQ10T equivalent, this device is selected for its fast switching performance (t_r = 36 ns, t_f = 12 ns), low thermal resistance (R_th(j-mb) = 1.9 K/W), and rugged avalanche capability (E_AS = 70 mJ), making it suitable for industrial and computing power stages requiring stable conduction and thermal management.

Technical Context

This N-channel enhancement-mode MOSFET uses TrenchMOS technology to achieve low on-resistance and high power density. Its gate threshold voltage ranges from 1 V at T_j = 175 °C to 4 V at T_j = 25 °C, enabling robust turn-on control across temperature. The integrated source-drain diode supports synchronous rectification with V_SD = 0.92–1.2 V and t_rr = 55 ns.

Dynamic characteristics include Q_GD = 8 nC and C_iss = 633 pF, supporting high-frequency operation up to several hundred kHz. Avalanche ruggedness is specified under unclamped inductive conditions (I_AS = 18 A, E_AS = 70 mJ), confirming suitability for hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switching in 48 V and 60 V bus applications.
I_D (continuous)	18 A at T_mb = 25 °C - Supports ≥200 W output in compact SMPS designs with heatsink mounting.
R_DS(on)	80–90 mΩ at V_GS = 10 V, I_D = 9 A, T_j = 25 °C - Enables <1.5 W conduction loss at 10 A, reducing thermal load.
Q_GD	8 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves dV/dt immunity.
R_th(j-mb)	1.9 K/W - Enables direct heatsink mounting for efficient junction-to-heatsink thermal path without isolation pads.
t_r/t_f	36 ns / 12 ns - Fast edge rates support >500 kHz PWM operation with reduced switching losses.
E_AS	70 mJ - Confirmed non-repetitive avalanche energy allows safe operation during transient overloads in inductive circuits.

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted metal base connected to drain. Mounting base provides low-inductance, high-current return path and thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; gate leakage <100 nA ensures low bias current.
2 (D)	Drain	Main high-side power terminal; electrically tied to mounting base for thermal + current path integration.
3 (S)	Source	Power return node; referenced to gate drive; internal source inductance 7.5 nH affects high-speed layout.

Key Features

Feature	Design Value
Low R_DS(on)	80–90 mΩ enables <1.5 W conduction loss at 10 A, reducing heatsink size in space-constrained PSUs.
Fast switching	t_r = 36 ns, t_f = 12 ns - reduces transition losses in high-frequency DC-DC converters (>300 kHz).
TrenchMOS architecture	Optimized cell pitch and trench depth deliver higher channel density and lower specific on-resistance vs planar MOSFETs.
Avalanche-rated	E_AS = 70 mJ - eliminates need for external clamping in flyback or boost converters with inductive loads.
Thermal efficiency	R_th(j-mb) = 1.9 K/W - allows direct mounting to chassis or heatsink, simplifying thermal design and improving reliability.

Applications

DC-DC Buck Converter

AC-DC Flyback PSU

Use Scenario: Primary-side high-side switch in isolated 24–48 V input, 5–12 V output buck-derived topology.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; operates at 200–500 kHz PWM frequency.

Use Value: Low Q_GD and fast t_r/t_f minimize dead-time losses and improve light-load efficiency.

Use Scenario: Primary switch in universal-input (85–265 VAC) offline flyback converter for industrial control power supplies.

IC Role / Device Role / Timing Role: High-voltage switching element handling reflected output voltage plus leakage spike; rated for 100 V V_DS margin.

Use Value: Avalanche ruggedness (70 mJ) absorbs leakage energy without snubber, reducing component count and board area.

Server VRM Phase Leg

Industrial Motor Drive Half-Bridge

Use Scenario: Lower-side switch in multiphase buck regulator supplying CPU core voltage (0.8–1.2 V @ 100+ A).

IC Role / Device Role / Timing Role: Synchronous rectifier in high-duty-cycle phase leg; conducts majority of cycle with minimal V_DS.

Use Value: R_DS(on) ≤90 mΩ at T_j = 100 °C ensures <1 W conduction loss per phase at 30 A, easing thermal management.

Use Scenario: High-side switch in 24–48 V brushed DC motor H-bridge driver for factory automation actuators.

IC Role / Device Role / Timing Role: Controlled switching element managing bidirectional current flow; driven by isolated gate driver.

Use Value: Low thermal resistance (1.9 K/W) enables sustained 15 A operation with passive heatsinking, eliminating fan requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NF10	R_DS(on) = 100 mΩ (typ), Q_G = 25 nC, R_th(j-mb) = 2.5 K/W	Higher conduction loss and slower switching reduce efficiency in >300 kHz designs.	Acceptable where cost sensitivity outweighs efficiency targets and thermal headroom exists.
IRF540N	R_DS(on) = 44 mΩ (typ), but V_DS = 100 V only at T_j = 25 °C; derates to 75 V at 125 °C.	Limited high-temperature voltage margin increases risk of breakdown in industrial ambient.	Only suitable for low-ambient, short-duration duty cycles; not recommended for continuous 48 V bus operation.

Compared with STP18NF10 and IRF540N, PHP18NQ10T offers superior thermal resistance (1.9 vs ≥2.5 K/W), tighter R_DS(on) tolerance (80–90 vs 100 mΩ), and guaranteed 100 V rating across full temperature range-critical for reliable operation in thermally demanding server and industrial power systems.

Availability

PHP18NQ10T is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PHP18NQ10T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.

The PHP18NQ10T belongs to Nexperia's standard-level TrenchMOS power MOSFET product line, engineered for cost-effective, thermally efficient switching in non-automotive power conversion applications.

FAQ

Is PHP18NQ10T suitable for automotive applications?

No. PHP18NQ10T is explicitly qualified for computing, communications, consumer, and industrial applications only-not automotive. It lacks AEC-Q101 qualification, has no automotive-grade screening, and is not tested to automotive temperature or reliability standards. Use in safety-critical vehicle systems violates Nexperia's suitability disclaimer.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per limiting values table, the maximum continuous drain current is 13 A at T_mb = 100 °C and V_GS = 10 V. This reflects thermal derating due to reduced heat dissipation capacity; the device maintains safe junction temperature below 175 °C under these conditions.

Does the mounting base require electrical isolation from the heatsink?

No. The mounting base is internally connected to the drain terminal (Pin 2), so electrical isolation is required if the heatsink is at a different potential than the drain node. Standard practice uses insulating thermal pads or mica washers with thermal grease when mounting to grounded or floating heatsinks.

Can PHP18NQ10T replace older N-channel MOSFETs like BUZ11 in legacy designs?

Yes, with verification. PHP18NQ10T matches BUZ11's V_DS = 50 V rating (BUZ11) only partially-it exceeds it at 100 V-but differs in package (TO-220AB vs TO-220), R_DS(on) (80–90 mΩ vs 50 mΩ), and gate charge. Layout and drive circuit review is essential before drop-in replacement.

PHP18NQ10T,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 633 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PHP18NQ10T,127 FAQ

1.How can I place an order for PHP18NQ10T,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHP18NQ10T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHP18NQ10T,127 reliable?

The price and inventory of PHP18NQ10T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP18NQ10T,127 is usually 5 days.

3.What payment methods are accepted for PHP18NQ10T,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP18NQ10T,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHP18NQ10T,127?

PHP18NQ10T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHP18NQ10T,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHP18NQ10T,127?

For technical support, including PHP18NQ10T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP18NQ10T,127 requirements.

6.How does Aetrix verify that PHP18NQ10T,127 is sourced from the original manufacturer or authorized distributors?

All PHP18NQ10T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP18NQ10T,127 meets industry standards.

7.What is the process for return or replacement of PHP18NQ10T,127?

All PHP18NQ10T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP18NQ10T,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHP18NQ10T,127 part is unused and in its original packaging.

Return procedure for PHP18NQ10T,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…