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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PHP18NQ11T,127

Name: PHP18NQ11T,127
Brand: Nexperia USA Inc.
SKU: PHP18NQ11T,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PHP18NQ11T,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PHP18NQ11T,127.pdf

Description:: MOSFET N-CH 110V 18A TO220AB

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Product details

Overview

PHP18NQ11T,127 from Nexperia is a standard-level N-channel TrenchMOS power FET in TO-220AB (SOT78) package, rated for 110 V V_DS, 18 A continuous drain current at T_mb = 25 °C, and 79 W total power dissipation. It delivers low R_DS(on) of 80 mΩ at V_GS = 10 V and T_j = 25 °C, with fast switching (t_r = 36 ns, t_f = 12 ns) and optimized gate charge (Q_GD = 8 nC), making it suitable for high-efficiency DC-DC converters and Class-D audio amplifiers.

For engineers reviewing the PHP18NQ11T,127 datasheet, PHP18NQ11T,127 pinout, PHP18NQ11T,127 application, or PHP18NQ11T,127 equivalent, key selection criteria include thermal resistance (R_th(j-mb) = 1.9 K/W), avalanche energy rating (E_DS(AL)S = 70 mJ), and source-drain diode performance (V_SD = 0.92 V at I_S = 18 A), critical for hard-switching and freewheeling operation in industrial SMPS designs.

Technical Context

This device employs TrenchMOS technology to achieve low on-resistance and fast dynamic response. Its gate threshold voltage (V_GS(th)) ranges from 2–4 V at T_j = 25 °C and remains functional down to 1 V at T_j = 175 °C, enabling robust gate drive compatibility with 3.3 V and 5 V logic controllers.

The integrated source-drain diode exhibits low forward voltage (0.92 V) and fast reverse recovery (t_rr = 55 ns, Q_r = 135 nC), supporting synchronous rectification and bidirectional current handling in half-bridge inverters. Thermal design is anchored to the mounting base (not case or ambient), with R_th(j-mb) = 1.9 K/W enabling high-power operation under heatsink-constrained conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	110 V - Maximum blocking voltage before breakdown; supports 48 V and 96 V bus architectures with margin.
I_D (continuous)	18 A at T_mb = 25 °C - Continuous current capability when mounted on heatsink; derates to 13 A at T_mb = 100 °C.
R_DS(on)	80 mΩ typ at V_GS = 10 V, I_D = 9 A, T_j = 25 °C - Low conduction loss enables <1.5 W dissipation at 10 A, reducing heatsink size.
Q_GD	8 nC - Gate-drain charge directly impacts Miller plateau duration and switching loss in hard-switched topologies.
t_r/t_f	36 ns / 12 ns - Fast edge rates support >500 kHz switching in resonant and PWM converters without excessive EMI.
E_DS(AL)S	70 mJ - Unclamped inductive switching energy rating confirms ruggedness in motor drive and transformer-coupled applications.
R_th(j-mb)	1.9 K/W - Junction-to-mounting-base thermal resistance enables direct thermal path to heatsink, critical for high-power density designs.

Pinout & Package

PHP18NQ11T,127 uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and 3 leads. The mounting base (mb) is electrically connected to the drain terminal, requiring isolation when mounted to shared heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 - G	Gate	Control electrode; requires 10 V drive for full enhancement; threshold range 1–4.4 V across temperature.
2 - D	Drain	Main high-side current path; internally bonded to mounting base - must be electrically isolated from heatsink unless system ground reference permits.
3 - S	Source	Power return node and reference for gate drive; also serves as cathode of integrated body diode.

Key Features

Feature	Design Value
Low R_DS(on) with TrenchMOS	80 mΩ @ 10 V drive enables <1.5 W conduction loss at 10 A, reducing thermal load in compact power stages.
Fast switching with low Q_GD	8 nC gate-drain charge minimizes Miller-induced turn-on delay and improves efficiency in high-frequency SMPS.
High avalanche energy rating	70 mJ unclamped energy withstand allows reliable operation in inductive load switching without external snubbers.
Optimized body diode	135 nC recovered charge and 55 ns t_rr reduce reverse recovery losses in half-bridge and synchronous rectifier configurations.
Thermally efficient TO-220AB	1.9 K/W junction-to-mounting-base resistance enables direct heatsink coupling, simplifying thermal management vs. TO-220FP or DPAK.

Applications

Class-D Audio Amplifiers

DC-to-DC Converters

Use Scenario: Output stage in high-fidelity 100–500 W audio amplifiers driving 4 Ω or 8 Ω loads.

IC Role / Device Role / Timing Role: High-speed power switch in half-bridge topology; handles bidirectional current via integrated body diode during dead-time.

Use Value: Low Q_GD and fast t_r/t_f minimize switching distortion and audible noise; 0.92 V V_SD reduces crossover loss.

Use Scenario: Primary-side switch in 60–200 W isolated flyback or forward converters for industrial power supplies.

IC Role / Device Role / Timing Role: Main switching element controlling energy transfer; operates at 65–130 kHz with hard-switched gate drive.

Use Value: 70 mJ avalanche rating tolerates leakage inductance spikes; 1.9 K/W R_th(j-mb) sustains high duty cycles without thermal runaway.

Inverters

Switched-Mode Power Supplies

Use Scenario: Half-bridge leg in 1–3 kVA solar microinverters converting DC to 230 VAC grid-synchronized output.

IC Role / Device Role / Timing Role: High-side/low-side switching device; body diode conducts freewheeling current during complementary switching transitions.

Use Value: 55 ns t_rr and 135 nC Q_r limit diode reverse recovery loss and EMI generation during 16–20 kHz PWM operation.

Use Scenario: Main switch in non-isolated buck or boost regulators powering FPGA core rails or telecom subsystems.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch; driven by dedicated gate driver IC with 5–10 V logic-compatible output.

Use Value: 80 mΩ R_DS(on) ensures <1% conduction loss at 15 A; V_GS(th) stability over -55 to +175 °C supports wide ambient operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NF10	100 V V_DS, 18 A I_D, R_DS(on) = 90 mΩ, TO-220 package, no mounting base connection to drain.	Lacks drain-connected mounting base; requires insulated washer for heatsink mounting; lower V_DS margin for 96 V systems.	Prefer when electrical isolation between drain and heatsink is mandatory; avoid where direct thermal coupling is needed.
IRF540NPBF	100 V V_DS, 33 A I_D, R_DS(on) = 44 mΩ, TO-220 package, higher gate charge (Q_G = 64 nC).	Higher peak current but slower switching (t_r = 80 ns); greater gate drive power required; less suitable for >200 kHz operation.	Select for higher current headroom in low-frequency (<100 kHz) linear or quasi-resonant designs where conduction loss dominates.

Compared with STP18NF10 and IRF540NPBF, PHP18NQ11T,127 offers superior thermal coupling (R_th(j-mb) = 1.9 K/W), higher V_DS margin (110 V), and lower Q_GD-making it optimal for high-frequency, high-reliability industrial SMPS and audio amplifiers where thermal and switching efficiency are critical.

Availability

PHP18NQ11T,127 is available at Aetrix Electronics and suitable for Class-D audio amplifiers, DC-to-DC convertors, inverters, and switched-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PHP18NQ11T,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

PHP18NQ11T,127 belongs to Nexperia's TrenchMOS standard-level power FET product line, engineered for computing, communications, consumer, and industrial power conversion where robustness, thermal efficiency, and consistent switching performance are essential.

FAQ

Is PHP18NQ11T,127 suitable for automotive applications?

No. The datasheet explicitly states this device is designed and qualified only for computing, communications, consumer, and industrial applications-not automotive. It lacks AEC-Q101 qualification, automotive-grade screening, or guaranteed operation under automotive temperature and reliability requirements.

What is the maximum gate-source voltage rating for PHP18NQ11T,127?

The absolute maximum V_GS is ±20 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to 10–15 V for full enhancement, with transient overshoot suppressed below 20 V using clamping or RC snubbing.

How is the mounting base (mb) electrically connected in PHP18NQ11T,127?

The mounting base is internally connected to the drain (Pin 2). This requires electrical isolation (e.g., mica washer + thermal paste) when mounted to a common heatsink shared with other devices unless the system design intentionally references the heatsink to drain potential.

Does PHP18NQ11T,127 have an integrated ESD protection diode on the gate?

No. The datasheet does not specify gate ESD protection. Gate oxide is sensitive to electrostatic discharge; external gate protection (e.g., 10–22 Ω series resistor + 12 V Zener clamp to source) is strongly recommended during PCB handling and circuit operation.

PHP18NQ11T,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 110 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 633 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PHP18NQ11T,127 FAQ

1.How can I place an order for PHP18NQ11T,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHP18NQ11T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHP18NQ11T,127 reliable?

The price and inventory of PHP18NQ11T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP18NQ11T,127 is usually 5 days.

3.What payment methods are accepted for PHP18NQ11T,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP18NQ11T,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHP18NQ11T,127?

PHP18NQ11T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHP18NQ11T,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHP18NQ11T,127?

For technical support, including PHP18NQ11T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP18NQ11T,127 requirements.

6.How does Aetrix verify that PHP18NQ11T,127 is sourced from the original manufacturer or authorized distributors?

All PHP18NQ11T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP18NQ11T,127 meets industry standards.

7.What is the process for return or replacement of PHP18NQ11T,127?

All PHP18NQ11T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP18NQ11T,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHP18NQ11T,127 part is unused and in its original packaging.

Return procedure for PHP18NQ11T,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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