Nexperia USA Inc. PHP191NQ06LT,127
- Part No.:
- PHP191NQ06LT,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP191NQ06LT,127.pdf
- Description:
- MOSFET N-CH 55V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:6,835
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Product details
Overview
PHP191NQ06LT from NXP Semiconductors is a logic-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 55 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 3.1 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-current switching element in DC-DC converters, motor drives, and UPS systems where low conduction loss and direct 3.3/5 V microcontroller gate drive are required.
For engineers reviewing the PHP191NQ06LT datasheet, PHP191NQ06LT pinout, PHP191NQ06LT application, or PHP191NQ06LT equivalent, key selection criteria include its 3.1 mΩ on-resistance at 10 V gate drive, 240 A peak pulsed current capability, junction-to-mounting-base thermal resistance of 0.5 K/W, and suitability for industrial-grade power switching with logic-level gate compatibility.
Technical Context
This device uses NXP's TrenchMOS technology to achieve low RDS(on) while maintaining robust avalanche ruggedness (560 mJ unclamped). Its gate threshold voltage ranges from 0.5 V (Tj = 175 °C) to 2.2 V (Tj = −55 °C), enabling reliable turn-on across temperature extremes with standard logic-level sources.
The integrated source-drain diode exhibits 0.79 V forward voltage at 25 A and 25 °C, with 78 ns reverse recovery time and 171 nC recovered charge-critical for synchronous rectification and hard-switched topologies. Thermal design leverages the mounting base (electrically connected to drain) for low-impedance heat transfer to external heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V maximum drain-source voltage - defines safe blocking capability in 48 V bus and 54 V surge-tolerant systems |
| RDS(on) | 3.1 mΩ typical at VGS = 10 V, ID = 25 A, Tj = 25 °C - enables <1 W conduction loss at 50 A, reducing heatsink requirements |
| ID (continuous) | 75 A at Tmb = 25 °C - supports high-power industrial loads without derating in well-cooled designs |
| QGD | 37.6 nC typical - determines Miller-induced switching delay and gate driver current demand during transition |
| Rth(j-mb) | 0.5 K/W - allows direct thermal path from silicon die to heatsink, enabling >200 W dissipation with modest ΔT |
| VGS(th) | 1.0–2.0 V typical at 25 °C - ensures full enhancement with 3.3 V or 5 V logic outputs without level-shifting |
| EAS | 560 mJ non-repetitive avalanche energy - provides single-pulse fault tolerance in inductive load switching |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with electrically active mounting base connected to drain terminal. Designed for heatsink mounting with one mounting hole and vertical PCB orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; requires ≤15 V drive; 2 nA leakage at 25 °C enables low-power bias networks |
| 2 (D) | Drain | Main power output; electrically tied to mounting base - must be isolated from heatsink unless system ground reference permits |
| 3 (S) | Source | Power return path; referenced to gate drive common; supports 75 A continuous and 240 A pulsed current |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Turns fully on with 3.3 V or 5 V microcontroller outputs - eliminates need for gate driver ICs in many embedded power stages |
| TrenchMOS architecture | Delivers 3.1 mΩ RDS(on) in TO-220AB - achieves performance comparable to larger packages without footprint penalty |
| Low QG/QGD ratio | 95.6 nC total gate charge with 37.6 nC Miller charge - improves switching efficiency and reduces EMI in high-frequency SMPS |
| Robust body diode | 78 ns trr, 171 nC Qr - enables use in synchronous buck and freewheeling paths without external Schottky replacement |
| Avalanche-rated | 560 mJ unclamped EAS - withstands inductive kickback in motor control and relay driving without snubber circuits |
Applications
| DC-DC Converters | Motor Control |
|---|---|
|
Use Scenario: High-efficiency 48 V input to 12 V output synchronous buck converter in telecom power supplies. IC Role / Device Role / Timing Role: Primary high-side switch handling up to 60 A DC current with 300 kHz PWM switching. Use Value: 3.1 mΩ RDS(on) limits conduction loss to <1.1 W at 60 A, enabling >95% efficiency without forced air cooling. |
Use Scenario: H-bridge driver for 24 V brushed DC motors in industrial automation actuators. IC Role / Device Role / Timing Role: Low-side switching element controlling motor direction and braking via PWM duty cycle. Use Value: 240 A peak current rating supports instantaneous stall current; 0.5 K/W Rth(j-mb) sustains 5 s overload without thermal shutdown. |
| Uninterruptible Power Supplies | Industrial Load Switching |
|
Use Scenario: Inverter stage in line-interactive UPS delivering 1 kVA sinusoidal output. IC Role / Device Role / Timing Role: Half-bridge leg switch operating in 50/60 Hz quasi-square wave mode with dead-time control. Use Value: Integrated source-drain diode with 0.79 V VSD and low Qr minimizes conduction loss during freewheeling, improving battery runtime by ~3%. |
Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V solenoids and incandescent lamps in factory control panels. IC Role / Device Role / Timing Role: Single-pole power switch activated by PLC digital output with soft-start timing. Use Value: Logic-level VGS(th) ensures compatibility with 3.3 V industrial I/O; 55 V VDS accommodates 24 V + 100% surge transients per IEC 61000-4-5. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 V VDS, 75 A ID, 7.5 mΩ RDS(on) @ 10 V - higher on-resistance, TO-220FP package with insulated tab | Requires heatsink isolation; less efficient at high current due to 2.4× higher RDS(on) | Preferred when higher voltage margin (75 V) is mandatory and thermal budget allows extra loss |
| IRF1404ZLPbF | 40 V VDS, 200 A ID, 4.7 mΩ RDS(on) @ 10 V - lower voltage rating, higher current, D2PAK package | Not suitable for 48 V systems; superior current handling but requires surface-mount assembly and larger PCB area | Chosen for high-current 12/24 V systems where board space permits SMD layout and voltage stress stays below 32 V |
Compared with STP75NF75 and IRF1404ZLPbF, PHP191NQ06LT uniquely balances 55 V rating, sub-4 mΩ on-resistance, TO-220AB through-hole mountability, and true logic-level gate drive - making it optimal for cost-sensitive, thermally constrained 48 V industrial power stages requiring plug-in replaceability.
Availability
PHP191NQ06LT is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and uninterruptible power supplies requiring stable component supply, long-term industrial lifecycle support, and consistent parametric performance across production batches.
Supply support for PHP191NQ06LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
This device belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, thermally demanding industrial power conversion where direct microcontroller interface and robust avalanche behavior are essential.
FAQ
Is PHP191NQ06LT suitable for 48 V battery-powered systems?
Yes - its 55 V VDS rating provides 7 V headroom above nominal 48 V bus, accommodating load-dump transients up to ISO 16750-2 Level IV (58 V/100 ms). The 3.1 mΩ RDS(on) minimizes voltage drop and self-heating during sustained 50–75 A operation, supporting high-efficiency battery discharge cycles.
What is the maximum gate-source voltage I can apply?
The absolute maximum VGS is ±15 V per datasheet limiting values. Operation beyond ±12 V risks permanent gate oxide damage. For reliable logic-level drive, use 0 V to +10 V; gate drive circuits must clamp negative excursions below −5 V during switching transitions to prevent latch-up or degradation.
Can PHP191NQ06LT be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (see Figure 9) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsink mounting to maintain thermal uniformity. Derate total current by 15% versus sum of individual ratings for reliability.
Does the mounting base require electrical isolation from the heatsink?
Yes - the mounting base is internally connected to the drain terminal (Pin 2). If the heatsink is grounded or at a different potential than the drain node, an electrically insulating pad (e.g., mica or ceramic) plus shoulder washer must be used. Failure to isolate may cause short-circuit failure or system ground loop issues.
PHP191NQ06LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.7mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 95.6 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7665 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP191NQ06LT,127 FAQ
1.How can I place an order for PHP191NQ06LT,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP191NQ06LT,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP191NQ06LT,127 reliable?
The price and inventory of PHP191NQ06LT,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP191NQ06LT,127 is usually 5 days.
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Once your PHP191NQ06LT,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP191NQ06LT,127?
For technical support, including PHP191NQ06LT,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP191NQ06LT,127 requirements.
6.How does Aetrix verify that PHP191NQ06LT,127 is sourced from the original manufacturer or authorized distributors?
All PHP191NQ06LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP191NQ06LT,127 meets industry standards.
7.What is the process for return or replacement of PHP191NQ06LT,127?
All PHP191NQ06LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP191NQ06LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP191NQ06LT,127 part is unused and in its original packaging.
Return procedure for PHP191NQ06LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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