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NXP Semiconductors PHP193NQ06T,127
- Part No.:
- PHP193NQ06T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP193NQ06T,127.pdf
- Description:
- MOSFET N-CH 55V 75A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,777
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Product details
Overview
PHP193NQ06T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in TO-220AB (SOT78) package, designed for high-current switching in industrial DC power systems. It delivers 75 A continuous drain current at 10 V gate drive, 4 mΩ typical RDS(on) at 25 °C, and 55 V VDS rating - enabling robust operation in motor drives and uninterruptible power supplies.
For engineers reviewing the PHP193NQ06T datasheet, PHP193NQ06T pinout, PHP193NQ06T application, or PHP193NQ06T equivalent, key selection criteria include its low on-resistance, avalanche ruggedness (560 mJ), thermal resistance to mounting base (0.5 K/W), and compatibility with standard-level gate drivers in high-power DC-to-DC converters and solenoid control circuits.
Technical Context
This MOSFET employs TrenchMOS™ technology to achieve enhanced channel density and reduced conduction losses. Its standard-level gate threshold (2–4 V at 25 °C) ensures compatibility with 5 V and 10 V logic-level controllers without requiring level-shifting circuitry.
The device features a monolithic source-drain diode with 251 nC recovered charge and 95 ns reverse recovery time, supporting synchronous rectification and inductive load switching. Its 0.5 K/W junction-to-mounting-base thermal resistance enables efficient heatsink coupling for sustained 300 W power dissipation at Tmb = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-source blocking voltage; supports 48 V nominal bus systems with 15% margin. |
| ID (DC) | 75 A at Tmb = 25 °C, VGS = 10 V - Enables high-current motor/solenoid drive without parallel devices. |
| RDS(on) | 3.4–4 mΩ (typ/max) at 25 °C - Delivers ≤0.225 W conduction loss at 75 A, reducing thermal stress. |
| EAS | 560 mJ (unclamped inductive) - Withstands single-pulse energy from inductive kickback in relay/motor switching. |
| Qg(tot) | 85.6 nC - Determines gate driver power requirement; compatible with common 1–2 A peak gate drivers. |
| Tj max | +175 °C - Allows operation in high-ambient industrial environments with appropriate thermal design. |
| Ciss | 5082 pF - Influences switching speed and EMI behavior; requires careful gate resistor selection for dV/dt control. |
Pinout & Package
PHP193NQ06T uses the TO-220AB (SOT78) plastic single-ended package with heatsink-mounted mounting base. The metal mounting base is internally connected to the drain terminal and serves as both thermal path and electrical node.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; requires 10 V drive for full enhancement; threshold range 2–4 V at 25 °C. |
| 2 | Drain (D) | Main high-side power terminal; electrically tied to mounting base; carries full load current and heat. |
| 3 | Source (S) | Power return path; referenced to control ground; used for current sensing and feedback loops. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables ultra-low RDS(on) (≤4 mΩ) in TO-220AB, improving efficiency over planar MOSFETs in high-current DC applications. |
| Standard-level gate drive | Operates fully enhanced with 10 V gate-source voltage - eliminates need for gate boosters in 5/10 V controller systems. |
| Avalanche-rated | Guaranteed 560 mJ non-repetitive drain-source avalanche energy - protects against inductive switching transients without external snubbers. |
| Integrated source-drain diode | Low VSD (0.8–1.2 V at 25 A) and fast trr (95 ns) support freewheeling and synchronous rectification in buck/boost topologies. |
| Mounting-base thermal path | 0.5 K/W Rth(j-mb) enables direct heatsink attachment - simplifies thermal management versus through-hole alternatives with higher junction-to-ambient resistance. |
Applications
| Motor Drive Control | Uninterruptible Power Supply (UPS) |
|---|---|
|
Use Scenario: High-current H-bridge or half-bridge driving of 24–48 V DC motors in industrial automation. IC Role / Device Role / Timing Role: Main power switch handling bidirectional 75 A peak currents with fast turn-on (23 ns td(on)) and turn-off (71 ns td(off)). Use Value: Low RDS(on) minimizes I²R losses during continuous conduction; avalanche rating absorbs back-EMF during abrupt stop commands. |
Use Scenario: Battery-to-DC and DC-to-AC inversion stages in line-interactive UPS systems. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier and inverter switch operating at 20–100 kHz with minimal conduction loss. Use Value: 55 V VDS accommodates 48 V battery stack plus surge margin; 300 W Ptot supports scalable power modules up to 2 kVA. |
| DC-to-DC Converter | Industrial Solenoid Control |
|
Use Scenario: Primary-side switch in isolated 48 V input, 12 V output forward or LLC resonant converters. IC Role / Device Role / Timing Role: High-duty-cycle power switch managing 75 A pulsed currents with Qg = 85.6 nC for precise PWM timing control. Use Value: Low Ciss (5082 pF) and Crss (289 pF) reduce Miller effect, enabling stable 100+ kHz switching with minimal gate drive overhead. |
Use Scenario: On/off control of high-power hydraulic/pneumatic solenoids in factory machinery and valve actuators. IC Role / Device Role / Timing Role: Robust low-side switch delivering 75 A inrush current with fast fall time (41 ns) for precise actuation timing. Use Value: Integrated source-drain diode provides controlled freewheeling; 175 °C Tj max ensures reliability in enclosed, high-ambient control cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 A/75 V, RDS(on) = 12.5 mΩ @ 10 V - higher on-resistance, lower voltage rating. | Less suitable for 48 V bus systems near voltage limit; better for 24 V solenoid control where voltage headroom is ample. | Select when cost sensitivity outweighs conduction loss; verify thermal margin due to higher RDS(on). |
| IRF1404 | 131 A/40 V, RDS(on) = 4 mΩ @ 10 V - higher current rating but lower VDS limit. | Not recommended for 48 V systems with transient surges; acceptable only in tightly regulated 36 V or lower DC buses. | Choose only if system VDS never exceeds 36 V; confirm layout avoids voltage overshoot beyond 40 V. |
Compared with STP75NF75 and IRF1404, PHP193NQ06T uniquely balances 55 V blocking capability, 4 mΩ conduction loss, and 560 mJ avalanche energy - making it optimal for 48 V industrial power switching where both voltage margin and thermal efficiency are critical.
Availability
PHP193NQ06T is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and DC-to-DC converters requiring stable component supply across long-lifecycle industrial programs.
Supply support for PHP193NQ06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductors, with deep expertise in automotive, industrial, and power management solutions.
The PHP193NQ06T belongs to NXP's TrenchMOS™ standard-level power MOSFET product line, engineered specifically for high-current, medium-voltage industrial switching applications demanding low conduction loss and rugged transient handling.
FAQ
What is the maximum continuous drain current rating for PHP193NQ06T?
The PHP193NQ06T supports 75 A continuous drain current at Tmb = 25 °C and VGS = 10 V. This rating holds at Tmb = 100 °C under same gate conditions. Derating applies above 25 °C mounting base temperature per Figure 2 in the datasheet, and actual current must respect thermal limits imposed by heatsink design and ambient conditions for PHP193NQ06T.
Does PHP193NQ06T have avalanche capability, and how is it specified?
Yes, PHP193NQ06T is rated for non-repetitive drain-source avalanche energy of 560 mJ under unclamped inductive load conditions (ID = 75 A, tp = 0.21 ms, VDD ≤ 55 V, RGS = 50 Ω, VGS = 10 V, starting at Tj = 25 °C). This specification confirms its ability to absorb inductive switching energy without failure - a key reliability feature for PHP193NQ06T in motor and solenoid drive applications.
What is the gate threshold voltage range for PHP193NQ06T, and how does it vary with temperature?
The gate-source threshold voltage (VGS(th)) for PHP193NQ06T is 2–4 V at Tj = 25 °C, 1–? V at Tj = 175 °C (min only specified), and up to 4.4 V at Tj = −55 °C. This standard-level threshold ensures reliable turn-on with 5 V or 10 V logic, while negative temperature coefficient improves stability under thermal stress for PHP193NQ06T.
Can PHP193NQ06T be used in surface-mount designs?
No - PHP193NQ06T is packaged in TO-220AB (SOT78), a through-hole heatsink-mountable package. While the PHB193NQ06T variant uses SOT404 (D2-PAK) for surface-mount use, PHP193NQ06T requires mechanical mounting to a heatsink via its insulated mounting base and is not suitable for reflow soldering or PCB-only thermal management.
What is the thermal resistance from junction to mounting base for PHP193NQ06T?
The maximum thermal resistance from junction to mounting base (Rth(j-mb)) for PHP193NQ06T is 0.5 K/W, as specified in Table 4. This low value reflects efficient internal thermal conduction to the metal mounting base, enabling high-power dissipation when PHP193NQ06T is properly mounted to an external heatsink with thermal interface material.
PHP193NQ06T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 85.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5082 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP193NQ06T,127 FAQ
1.How can I place an order for PHP193NQ06T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP193NQ06T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP193NQ06T,127 reliable?
The price and inventory of PHP193NQ06T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP193NQ06T,127 is usually 5 days.
3.What payment methods are accepted for PHP193NQ06T,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP193NQ06T,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHP193NQ06T,127?
PHP193NQ06T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHP193NQ06T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP193NQ06T,127?
For technical support, including PHP193NQ06T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP193NQ06T,127 requirements.
6.How does Aetrix verify that PHP193NQ06T,127 is sourced from the original manufacturer or authorized distributors?
All PHP193NQ06T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP193NQ06T,127 meets industry standards.
7.What is the process for return or replacement of PHP193NQ06T,127?
All PHP193NQ06T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP193NQ06T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP193NQ06T,127 part is unused and in its original packaging.
Return procedure for PHP193NQ06T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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