My Inquiry
My Account
NXP Semiconductors PHP21N06T,127
- Part No.:
- PHP21N06T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP21N06T,127.pdf
- Description:
- MOSFET N-CH 55V 21A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,583
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PHP21N06T,127 from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in TO220AB package, rated for 55 V drain-source voltage, 21 A DC drain current at 25 °C, and 75 mΩ RDS(ON) at VGS = 10 V. It integrates ESD protection up to 2 kV and is optimized for DC-DC converters and general-purpose switching applications.
For engineers reviewing the PHP21N06T,127 datasheet, PHP21N06T,127 pinout, PHP21N06T,127 application, or PHP21N06T,127 equivalent, key selection criteria include its standard-level gate drive compatibility (10 V), low on-resistance with thermal derating to 14.7 A at 100 °C, integral body diode with 32 ns reverse recovery time, and TO220AB mounting-base-connected drain configuration.
Technical Context
This MOSFET employs trench-gate technology to achieve low RDS(ON) and high transconductance (gfs = 1 S typical), enabling efficient switching in hard-switched topologies. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard logic-level drivers while maintaining noise immunity.
The device features a thermally robust TO220AB package with junction-to-mounting-base thermal resistance of 2.18 K/W max, supporting high-power operation when heatsinked. The integral body diode exhibits VSD = 0.95–1.2 V at 19.7 A and Qrr = 0.12 µC, making it suitable for synchronous rectification and freewheeling roles in buck and flyback converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage for 48 V bus and automotive 36 V systems |
| ID (DC) | 21 A at Tmb = 25 °C - Continuous current capability with heatsinking |
| RDS(ON) | 75 mΩ max at VGS = 10 V - Low conduction loss enabling <1.6 W dissipation at 10 A |
| Qg(tot) | 13 nC typical - Gate charge supporting 100 kHz+ switching with moderate driver strength |
| Tj max | 175 °C - High-temperature operation compatible with industrial and automotive under-hood environments |
| VGS(th) | 2.0–4.0 V - Threshold range ensuring clean turn-on with 5 V or 3.3 V logic-compatible gate drive |
| EAS | 30 mJ non-repetitive - Avalanche energy rating supports unclamped inductive turn-off stress |
Pinout & Package
Package: TO220AB (SOT78), plastic envelope with metal mounting base electrically connected to pin 2 (drain); net mass 2 g; UL94 V0 epoxy.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires ≤20 V absolute max gate-source voltage; sensitive to ESD |
| 2 | Drain | Main high-side current path; internally bonded to mounting base for low-inductance thermal/ground path |
| 3 | Source | Reference node for gate drive; source inductance measured at 7.5 nH (6 mm lead length) |
| Tab | Drain | Electrically tied to pin 2; must be isolated from chassis unless drain is system ground |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 75 mΩ RDS(ON) in TO220AB, reducing conduction losses vs planar MOSFETs of same size |
| Integral Zener-protected gate | 2 kV HBM ESD rating eliminates need for external gate protection in most board-level environments |
| Drain-connected mounting base | Minimizes thermal resistance (Rth j-mb ≤ 2.18 K/W) and simplifies heatsink interface design |
| Fast body diode | 32 ns trr and 0.12 µC Qrr support efficient freewheeling in high-frequency SMPS |
| Standard-level gate drive | Operates fully enhanced at VGS = 10 V, compatible with common PWM controller outputs |
Applications
| DC-DC Buck Converter | Automotive Lighting Control |
|---|---|
Use Scenario: Primary switch in 12 V–48 V input, 3.3 V/5 V/12 V output synchronous buck converter for telecom or industrial power supplies. IC Role / Device Role / Timing Role: High-side power switch handling continuous 15–20 A load current with 100–500 kHz switching frequency. Use Value: 75 mΩ RDS(ON) limits I²R loss to ≤3 W at 15 A, enabling compact heatsink design; fast Qg allows efficient gate driving with low-cost controllers. |
Use Scenario: Load switch for LED headlamps, fog lamps, or interior lighting in 12 V automotive systems with PWM dimming. IC Role / Device Role / Timing Role: Low-side or high-side switching element controlling up to 20 A lamp current with transient surge tolerance. Use Value: 175 °C junction rating withstands under-hood temperatures; avalanche energy rating (30 mJ) absorbs inductive kickback from lamp filaments. |
| Industrial Motor Drive | Power Supply OR-ing |
Use Scenario: Half-bridge leg in 24 V/48 V brushed DC motor control for factory automation or HVAC actuators. IC Role / Device Role / Timing Role: Low-side switching transistor in H-bridge topology, commutating bidirectional motor current up to 21 A. Use Value: Body diode forward voltage (0.95 V typ) minimizes freewheeling loss during PWM off-time; low Coss (110–135 pF) reduces switching loss at 20–100 kHz. |
Use Scenario: OR-ing diode replacement in redundant 24 V/48 V power supply systems for servers or PLCs. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency. Use Value: RDS(ON) of 75 mΩ yields <0.8 V drop at 10 A vs >0.4 V for Schottky, cutting conduction loss by >50% and enabling cooler operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP22NF06L | 60 V VDS, 22 A ID, 55 mΩ RDS(ON) at 10 V, TO220FP package (isolated tab) | Lower RDS(ON) but higher gate charge (24 nC); tab electrically isolated | Preferred where lower conduction loss is critical and isolated mounting is required; requires different heatsink isolation strategy. |
| IRFZ44NPBF | 55 V VDS, 49 A ID, 28 mΩ RDS(ON) at 10 V, TO220AB package | Higher current rating and lower RDS(ON), but no specified ESD rating; slower tr/tf | Selected when higher peak current and lower on-resistance justify trade-off in ESD robustness and switching speed. |
Compared with STP22NF06L and IRFZ44NPBF, PHP21N06T,127 offers balanced performance: moderate RDS(ON) with verified 2 kV ESD protection and TO220AB drain-tab connectivity-ideal for cost-sensitive, thermally constrained designs requiring proven reliability without gate protection overhead.
Availability
PHP21N06T,127 is available at Aetrix Electronics and suitable for DC-DC converters, automotive lighting control, and industrial motor drives requiring stable component supply and long-term manufacturability.
Supply support for PHP21N06T,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader delivering high-performance analog, logic, and power solutions, with roots in Philips' pioneering semiconductor division.
The PHP21N06T,127 belongs to NXP's TrenchMOS™ standard-level power MOSFET family, engineered for cost-effective, robust switching in industrial power conversion and automotive subsystems where gate-drive simplicity and thermal resilience are essential.
FAQ
What is the maximum continuous drain current rating for PHP21N06T,127 at 100 °C mounting temperature?
The PHP21N06T,127 supports 14.7 A DC drain current at Tmb = 100 °C, as specified in the Limiting Values table. This derating reflects thermal constraints of the TO220AB package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using Rth j-mb = 2.18 K/W max and actual power dissipation to ensure Tj ≤ 175 °C.
Does PHP21N06T,127 require external gate protection against ESD?
No, PHP21N06T,127 incorporates integral Zener diodes providing 2 kV human-body-model ESD protection on all pins, eliminating the need for external gate protection components in typical PCB layouts. However, standard ESD handling precautions during assembly remain mandatory per Philips' notes.
What is the gate threshold voltage range for PHP21N06T,127, and how does it affect drive requirements?
The PHP21N06T,127 has a gate threshold voltage VGS(th) of 2.0–4.0 V at Tj = 25 °C, ensuring full enhancement at VGS = 10 V. This standard-level threshold allows direct interfacing with 5 V or 3.3 V microcontrollers via simple level-shifting or buffer circuits, avoiding dedicated gate drivers in low-frequency applications.
Can PHP21N06T,127 be used in avalanche mode, and what is its rated energy?
Yes, PHP21N06T,127 is rated for non-repetitive unclamped inductive turn-off with an avalanche energy WDSS of 30 mJ under specified test conditions (ID = 10 A, VDD ≤ 25 V, VGS = 10 V). This rating enables limited use in circuits with inductive loads where voltage spikes may exceed VDS, but repetitive avalanche operation is not guaranteed.
How is the drain terminal connected in the TO220AB package of PHP21N06T,127?
In the PHP21N06T,127 TO220AB (SOT78) package, pin 2 and the metal mounting tab are both electrically connected to the drain terminal. This configuration provides a low-inductance, low-thermal-resistance path for high-current drain conduction and heatsinking, but requires electrical isolation of the tab from other system potentials unless drain is referenced to chassis ground.
PHP21N06T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 69W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP21N06T,127 FAQ
1.How can I place an order for PHP21N06T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP21N06T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP21N06T,127 reliable?
The price and inventory of PHP21N06T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP21N06T,127 is usually 5 days.
3.What payment methods are accepted for PHP21N06T,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP21N06T,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHP21N06T,127?
PHP21N06T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHP21N06T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP21N06T,127?
For technical support, including PHP21N06T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP21N06T,127 requirements.
6.How does Aetrix verify that PHP21N06T,127 is sourced from the original manufacturer or authorized distributors?
All PHP21N06T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP21N06T,127 meets industry standards.
7.What is the process for return or replacement of PHP21N06T,127?
All PHP21N06T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP21N06T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP21N06T,127 part is unused and in its original packaging.
Return procedure for PHP21N06T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PHP21N06T,127 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
