NXP Semiconductors PHP222NQ04LT,127
- Part No.:
- PHP222NQ04LT,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP222NQ04LT,127.pdf
- Description:
- MOSFET N-CH 40V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,117
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Product details
Overview
PHP222NQ04LT from NXP Semiconductors (formerly Philips) is a logic-level N-channel TrenchMOS™ power MOSFET in TO-220AB (SOT78) package, rated for 40 V VDS, 75 A ID, 300 W Ptot, and 2.4 mΩ RDS(on) @ 10 VGS. It serves as a high-current switching element in DC-to-DC converters, motor drives, and uninterruptible power supplies where low gate drive voltage compatibility and minimal conduction loss are critical.
For engineers reviewing the PHP222NQ04LT datasheet, PHP222NQ04LT pinout, PHP222NQ04LT application, or PHP222NQ04LT equivalent, key selection criteria include its 1.5 V typical gate threshold voltage, 0.5 K/W junction-to-mounting-base thermal resistance, avalanche energy rating of 560 mJ, and suitability for industrial-grade 40 V system switching with logic-level (≤5 V) microcontroller gate drive.
Technical Context
This device uses TrenchMOS™ technology to achieve very low on-state resistance while maintaining robust avalanche ruggedness and stable threshold voltage across temperature (0.5–2.2 V range). Its gate-source leakage is limited to 100 nA at ±15 V, and it supports fast switching with 93.6 nC total gate charge and 268 ns rise time under standard test conditions.
The source-drain body diode exhibits 0.79 V forward voltage at 25 A and 70 ns reverse recovery time, enabling synchronous rectification or freewheeling operation. Thermal design is simplified by the mounting base (pin 2) being internally connected to drain, allowing direct heatsink attachment with low thermal impedance (0.5 K/W max).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum continuous drain-source blocking voltage; defines use in ≤40 V DC bus systems. |
| ID | 75 A @ Tmb = 25 °C - Continuous current capability with heatsink; derates to 75 A even at 100 °C mounting base. |
| RDS(on) | 2.4 mΩ typ @ VGS = 10 V, Tj = 25 °C - Enables <1.9 W conduction loss at 75 A; critical for high-efficiency power stages. |
| VGS(th) | 1.5 V typ @ ID = 1 mA - Logic-level threshold ensures full enhancement with 3.3 V or 5 V MCU outputs without level-shifting. |
| EAS | 560 mJ - Non-repetitive avalanche energy rating supports inductive load switching without external snubbers. |
| Rth(j-mb) | 0.5 K/W max - Low thermal resistance from junction to mounting base enables compact heatsink designs. |
| Qg(tot) | 93.6 nC - Total gate charge determines driver strength requirement; compatible with standard gate drivers (e.g., TC442x). |
Pinout & Package
PHP222NQ04LT is housed in TO-220AB (SOT78) plastic single-ended package with heatsink-mounted mounting base. Pin 2 is the mounting base and is electrically connected to the drain terminal; it is not accessible as a signal lead.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input; requires ≤±15 V drive; 100 nA leakage ensures low standby power. |
| 2 | Mounting Base (Drain-connected) | Internally tied to drain; used for mechanical mounting and thermal path; must be electrically isolated from PCB ground unless drain is grounded. |
| 3 | Source (S) | Power return node; carries full load current; referenced for gate drive in low-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | 1.5 V typical VGS(th) enables direct interface with 3.3 V/5 V MCUs without gate driver ICs. |
| Ultra-low RDS(on) | 2.4 mΩ @ 10 VGS reduces conduction losses by >30% vs. comparable 40 V MOSFETs, improving thermal margin. |
| Avalanche ruggedness | 560 mJ EAS allows safe operation in inductive switching circuits (e.g., motor H-bridges) without clamping diodes. |
| Thermal performance | 0.5 K/W Rth(j-mb) supports high-power density designs with minimal heatsink mass. |
| Body diode quality | 70 ns trr and 127 nC Qr enable efficient freewheeling in synchronous buck or half-bridge topologies. |
Applications
| Motor Control | DC-DC Conversion |
|---|---|
Use Scenario: High-current brushed DC motor drive in industrial automation systems requiring bidirectional control and PWM switching up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; handles peak currents up to 240 A in pulsed mode. Use Value: 2.4 mΩ RDS(on) minimizes I²R heating during 75 A continuous operation, extending motor driver lifetime. |
Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output isolated DC-DC converter for telecom power supplies. IC Role / Device Role / Timing Role: Secondary-side power switch in forward or LLC resonant topology; switched at 300–500 kHz. Use Value: 93.6 nC Qg and 268 ns rise time support efficient high-frequency switching with low driver loss. |
| Uninterruptible Power Supply | Industrial Load Switching |
Use Scenario: Battery backup switching and inverter output stage in 40 V nominal UPS systems supporting 1–3 kVA loads. IC Role / Device Role / Timing Role: Bidirectional power switch in battery charging/discharging path and AC inverter bridge leg. Use Value: 560 mJ avalanche rating protects against inductive kickback during grid failover transients. |
Use Scenario: Solid-state replacement for electromechanical relays controlling solenoids, lamps, and heaters in PLC I/O modules. IC Role / Device Role / Timing Role: Single-pole, high-current load switch with integrated protection and logic-level enable. Use Value: 1.5 V VGS(th) ensures reliable turn-on with 3.3 V PLC controller outputs, eliminating external level shifters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF40 | 40 V VDS, 75 A ID, but higher RDS(on) = 12 mΩ @ 10 VGS; no specified avalanche rating. | Limited to lower-efficiency, non-inductive switching due to higher conduction loss and lack of EAS spec. | Choose only if cost is primary constraint and thermal headroom exists; avoid in motor or UPS applications. |
| IRF1404Z | 40 V VDS, 131 A ID, RDS(on) = 3.8 mΩ @ 10 VGS; 200 mJ EAS; TO-220 package. | Higher current rating but lower avalanche ruggedness and higher on-resistance than PHP222NQ04LT. | Prefer PHP222NQ04LT when 560 mJ avalanche capability or sub-3 mΩ RDS(on) is required for reliability-critical 40 V systems. |
Compared with STP75NF40 and IRF1404Z, PHP222NQ04LT delivers superior thermal efficiency (2.4 mΩ), industry-leading avalanche robustness (560 mJ), and true logic-level operation (1.5 V VGS(th)), making it optimal for high-reliability 40 V industrial switching where conduction loss and transient survivability are design-critical.
Availability
PHP222NQ04LT is available at Aetrix Electronics and suitable for motor control, DC-to-DC conversion, and uninterruptible power supply applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from original manufacturer channels.
Supply support for PHP222NQ04LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, headquartered in Eindhoven, Netherlands.
The PHP222NQ04LT belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered specifically for high-current, low-voltage industrial switching applications demanding minimal gate drive voltage, ultra-low on-resistance, and robust avalanche tolerance.
FAQ
What is the maximum gate-source voltage rating for PHP222NQ04LT?
The PHP222NQ04LT has a maximum gate-source voltage (VGS) rating of ±15 V, as defined in its Absolute Maximum Ratings table. Exceeding this voltage risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp VGS within this range - for example, using Zener diodes or dedicated gate driver ICs with built-in overvoltage protection. This specification applies across the full operating temperature range.
Does PHP222NQ04LT support logic-level gate drive from a 3.3 V microcontroller?
Yes, PHP222NQ04LT supports logic-level gate drive from a 3.3 V microcontroller: its typical gate-source threshold voltage (VGS(th)) is 1.5 V, with a maximum of 2.2 V at −55 °C. At VGS = 3.3 V and Tj = 25 °C, RDS(on) is ≤3.2 mΩ - sufficient to deliver near-rated current with acceptable conduction loss. However, for full 75 A capability at elevated temperatures, 5 V or higher gate drive is recommended.
What is the thermal resistance from junction to mounting base for PHP222NQ04LT?
The maximum thermal resistance from junction to mounting base (Rth(j-mb)) for PHP222NQ04LT is 0.5 K/W, as specified in Table 4 of the datasheet. This value reflects the device's optimized internal construction and direct metal mounting base connection. Achieving this performance requires proper mechanical mounting - including flatness, surface finish, and thermal interface material - between the TO-220AB mounting base and the heatsink.
Can PHP222NQ04LT be used in avalanche mode, and what is its rated energy?
Yes, PHP222NQ04LT is rated for non-repetitive avalanche operation with an energy limit of 560 mJ under specified test conditions (ID = 75 A, tp = 0.29 ms, VDD ≤40 V, RGS = 50 Ω, VGS = 10 V, starting Tj = 25 °C). This makes it suitable for inductive load switching without external snubbers in applications like motor drives and UPS inverters, provided single-event energy does not exceed this value and thermal limits are observed.
What is the source-drain diode forward voltage of PHP222NQ04LT at 25 A?
The source-drain (body) diode forward voltage (VSD) of PHP222NQ04LT is 0.79 V typical and 1.2 V maximum at IS = 25 A and VGS = 0 V, per Table 5. This low forward drop supports efficient freewheeling in buck converters and half-bridge topologies. The diode's reverse recovery time is 70 ns typical, and recovered charge is 127 nC - parameters critical for minimizing switching loss in synchronous rectification applications.
PHP222NQ04LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 93.6 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7880 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP222NQ04LT,127 FAQ
1.How can I place an order for PHP222NQ04LT,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP222NQ04LT,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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5.How can I obtain technical support or documentation for PHP222NQ04LT,127?
For technical support, including PHP222NQ04LT,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP222NQ04LT,127 requirements.
6.How does Aetrix verify that PHP222NQ04LT,127 is sourced from the original manufacturer or authorized distributors?
All PHP222NQ04LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP222NQ04LT,127 meets industry standards.
7.What is the process for return or replacement of PHP222NQ04LT,127?
All PHP222NQ04LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP222NQ04LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP222NQ04LT,127 part is unused and in its original packaging.
Return procedure for PHP222NQ04LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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