NXP Semiconductors PHP225,118

Overview

PHP225,118 from Nexperia is a dual P-channel enhancement-mode MOSFET in a single SO8 (SOT96-1) package, designed for synchronous rectification and bidirectional power switching in DC-DC converters and motor drivers. It features R_DS(on) = 0.22 Ω (typ) at V_GS = −10 V, −1 A, V_DS = −30 V maximum rating, and fast switching with t_on = 20–80 ns and t_off = 50–140 ns.

For engineers reviewing the PHP225,118 datasheet, PHP225,118 pinout, PHP225,118 application, or PHP225,118 equivalent, this dual P-FET supports high-frequency power management where low conduction loss, thermal robustness (R_th(j-sp) = 35 K/W), and matched channel characteristics are critical for balanced load sharing and layout efficiency.

Technical Context

This device integrates two identical vertical D-MOS P-channel transistors in one SO8 package, enabling compact half-bridge or dual-switch topologies without cross-conduction risk. Its gate threshold voltage (V_GS(th) = −1 to −2.8 V) ensures reliable turn-on with standard logic-level drive, while its low Q_GD = 3 nC minimizes Miller-induced switching delay.

The source-drain diode exhibits V_SD = −1.6 V at I_S = −1.25 A and t_rr = 150–200 ns, supporting efficient body-diode conduction during dead-time intervals in synchronous buck or H-bridge configurations.

Key Specifications

Pinout & Package

PHP225,118 uses the SOT96-1 (SO8) plastic small-outline package, 8-lead, 3.9 mm body width, with exposed drain pads for enhanced thermal performance. Pin 1 is index-marked; both drain terminals (Pins 7 & 8 for D1; Pins 4 & 5 for D2) are internally paralleled per channel to reduce package inductance and improve current sharing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with DMG6968UVT-7 and SI3993DV-T1-GE3, PHP225,118 uniquely balances 30 V capability, dual integration, and SO8 thermal performance - making it optimal for space-constrained 24 V motor and DC-DC designs where matching and layout simplicity outweigh ultra-low R_DS(on).

Availability

PHP225,118 is available at Aetrix Electronics and suitable for motor and actuator drivers, synchronized rectification circuits, and power management subsystems requiring stable component supply across industrial and communications equipment lifecycles.

Supply support for PHP225,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, miniaturization, and manufacturability.

PHP225,118 belongs to Nexperia's intermediate-level P-channel MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial and computing power applications where dual integration and SO8 thermal performance are prioritized.

FAQ

Is PHP225,118 suitable for automotive applications?

No. PHP225,118 is not AEC-Q101 qualified and is explicitly rated for computing, communications, consumer, and industrial use only. Its datasheet states "designed and qualified for use in computing, communications, consumer and industrial applications only" and carries no automotive qualification markings or test reports.

Can PHP225,118 operate with 3.3 V logic-level gate drive?

Not reliably. With V_GS(th) ranging from −1 V to −2.8 V and R_DS(on) = 0.33–0.4 Ω at V_GS = −4.5 V, 3.3 V drive yields insufficient overdrive for low-loss operation. Minimum recommended V_GS is −4.5 V; −10 V is required for specified 0.22 Ω R_DS(on).

What is the maximum safe continuous power dissipation per channel?

At T_sp = 80 °C, each channel supports up to 1 W continuously (2 W total), per Table 4 limiting values. This assumes PCB mounting with thermal resistance from ambient to tie-point of 90 K/W. Exceeding this derates junction temperature toward the 150 °C absolute maximum.

Are Pins 4 and 5, and Pins 7 and 8 internally connected?

Yes. Per Table 2 pinning information and Figure 4 package graphic, Pins 4 & 5 are both labeled D2 and Pins 7 & 8 are both labeled D1 - confirming internal paralleling of drain terminals per channel to reduce package inductance and improve current sharing uniformity.