Nexperia USA Inc. PHP23NQ11T,127

Overview

PHP23NQ11T from NXP Semiconductors is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, designed for high-efficiency switching in DC-to-DC converters and switched-mode power supplies. It delivers 110 V drain-source breakdown voltage, 23 A continuous drain current at T_mb = 25 °C, 49 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, and features low thermal resistance (R_th(j-mb) = 1.5 K/W) for heatsink-mounted operation.

For engineers reviewing the PHP23NQ11T datasheet, PHP23NQ11T pinout, PHP23NQ11T application, or PHP23NQ11T equivalent, key selection criteria include its 110 V V_DS rating, 23 A I_D capability at 25 °C mounting base temperature, 100 W P_tot, 10 nC Q_GD, and suitability for non-automotive industrial/computing/communications power stages requiring robust avalanche energy (93 mJ).

Technical Context

This MOSFET employs NXP's TrenchMOS technology to achieve low on-resistance and fast switching with controlled gate charge distribution: Q_G(tot) = 22 nC, Q_GD = 10 nC, and Q_GS = 5 nC at V_GS = 10 V, enabling efficient hard-switched topologies. Its gate threshold voltage (V_GS(th)) ranges from 1 V at T_j = 175 °C to 4.4 V at T_j = −55 °C, ensuring stable turn-on across wide temperature extremes.

The device integrates a source-drain diode with 11 A forward current capability (V_SD = 0.9–1.5 V), 64 ns reverse recovery time, and 120 nC recovered charge - characteristics critical for synchronous rectification and freewheeling paths in buck and flyback converters.

Key Specifications

Pinout & Package

PHP23NQ11T uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting base electrically connected to the drain terminal. The mounting base (mb) serves as both thermal interface and high-current drain path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100–120 V power MOSFET applications.

Compared with STP22N10F7 and IRF540NPBF, PHP23NQ11T uniquely balances low R_DS(on), low Q_GD, and rated avalanche ruggedness in a standard TO-220AB footprint - making it optimal for medium-frequency, high-reliability industrial and computing power stages where both efficiency and transient robustness matter.

Availability

PHP23NQ11T is available at Aetrix Electronics and suitable for server VRMs, industrial AC-DC adapters, and telecom DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for PHP23NQ11T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

PHP23NQ11T belongs to NXP's TrenchMOS power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in computing, communications, and industrial power conversion - emphasizing thermal performance, avalanche ruggedness, and gate drive compatibility.

FAQ

Is PHP23NQ11T suitable for automotive applications?

No. The datasheet explicitly states this device is "designed and qualified for use in computing, communications, consumer and industrial applications only" and is not automotive-qualified. It lacks AEC-Q101 stress testing, extended temperature validation beyond −55 °C to +175 °C for automotive environments, and automotive-specific failure mode analysis. Use only in non-safety-critical industrial or commercial systems.

What is the maximum gate-source voltage rating, and can it be driven directly from a 5 V microcontroller?

The absolute maximum V_GS is ±20 V, but the device achieves full enhancement at V_GS = 10 V. Its V_GS(th) is 2–4 V at 25 °C, so a 5 V logic signal will turn it on - however, R_DS(on) will be ~2× higher than at 10 V (e.g., ~100 mΩ vs. 49 mΩ), increasing conduction loss. For optimal efficiency, use a dedicated gate driver or level shifter to supply 10 V.

How is the mounting base (mb) electrically connected, and what isolation requirements apply?

The mounting base is internally connected to the drain terminal (Pin 2), as confirmed in Table 2 ("mb D mounting base; connected to drain"). When mounted to a heatsink, the heatsink becomes part of the drain circuit. If the heatsink is grounded, the drain is grounded - requiring electrical isolation (e.g., insulating pad + shoulder washer) if drain must remain floating or at high potential relative to chassis ground.

Does PHP23NQ11T have a specified SOA curve, and how does it compare to similar 100 V MOSFETs?

Yes - Figure 3 provides the Safe Operating Area (SOA) for continuous and pulsed drain currents up to 92 A (IDM), with limits defined by R_DS(on), thermal runaway, and secondary breakdown. At 50 V V_DS, it supports 16 A continuous (T_mb = 100 °C) and 92 A pulsed (tp ≤10 µs). Its SOA is broader than legacy planar MOSFETs due to TrenchMOS's superior thermal stability and lower R_DS(on) temperature coefficient.