Nexperia USA Inc. PHP28NQ15T,127

Overview

PHP28NQ15T from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 150 V V_DS, 28.5 A continuous drain current at T_mb = 25 °C, and 150 W total power dissipation. It delivers low R_DS(on) of 54 mΩ @ V_GS = 10 V, 18 A, 25 °C, with fast switching (t_r = 20 ns, t_f = 55 ns) and low Q_GD (7.5 nC), making it suitable for high-efficiency DC-DC converters and Class-D audio amplifiers.

For engineers reviewing the PHP28NQ15T datasheet, PHP28NQ15T pinout, PHP28NQ15T application, or PHP28NQ15T equivalent, key selection criteria include its 150 V blocking capability, thermal resistance R_th(j-mb) = 1 K/W, avalanche energy rating (100 mJ), body diode recovery charge (Q_r = 170 nC), and gate plateau voltage (V_GS(pl) = 5 V) - all critical for hard-switched SMPS and inverter designs.

Technical Context

This MOSFET employs TrenchMOS technology to achieve enhanced conduction efficiency and reduced switching losses. Its gate threshold voltage (V_GS(th)) ranges from 1 V at 175 °C to 4.4 V at –55 °C, ensuring robust turn-on margin across industrial temperature extremes. The integrated source-drain diode exhibits V_SD = 0.87–1.2 V @ I_S = 25 A and t_rr = 110 ns, enabling reliable synchronous rectification and freewheeling operation.

Dynamic performance is optimized via low input capacitance (C_iss = 1250 pF), moderate reverse transfer capacitance (C_rss = 55 pF), and tightly controlled gate charge distribution (Q_GS = 6 nC, Q_GD = 7.5 nC). The device supports unclamped inductive switching up to E_DS(AL)S = 100 mJ, confirming ruggedness in flyback and LLC resonant topologies.

Key Specifications

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted metal base electrically connected to the drain terminal. Mounting base provides low-thermal-resistance path and mechanical stability for power applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Compared with STP28NF15 and IRF640NPBF, PHP28NQ15T offers the lowest R_DS(on) and Q_GD in the 150 V class, enabling higher efficiency and higher-frequency operation - critical for space-constrained, thermally demanding Class-D and telecom PSU designs.

Availability

PHP28NQ15T is available at Aetrix Electronics and suitable for Class-D audio amplifiers, DC-to-DC converters, DC-to-AC inverters, and switched-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PHP28NQ15T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

The PHP28NQ15T belongs to Nexperia's TrenchMOS standard-level power MOSFET product line, engineered for high-efficiency switching in computing, communications, and industrial power conversion systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current for PHP28NQ15T at 100 °C mounting base temperature?

The maximum continuous drain current is 20.2 A at T_mb = 100 °C, as specified in Table 4 (Limiting values) of the datasheet. This derating reflects thermal constraints of the TO-220AB package and must be applied in thermal design calculations alongside R_th(j-mb) = 1 K/W.

Is PHP28NQ15T suitable for avalanche operation in unclamped inductive switching?

Yes - PHP28NQ15T is fully rated for unclamped inductive switching with E_DS(AL)S = 100 mJ at T_j(init) = 25 °C, ID = 9.9 A, and V_sup ≤150 V. This capability is validated per JEDEC JESD24-1 and supports robust operation in flyback and forward converter primary switches.

Does the mounting base of PHP28NQ15T connect internally to any terminal?

Yes - the mounting base (mb) is electrically connected to the drain terminal (Pin 2), as confirmed in Table 2 (Pinning information) and Figure 15 (package outline). This requires electrical isolation from the heatsink unless the drain node is referenced to system ground.

What gate drive voltage is required to achieve the specified R_DS(on) of 54 mΩ?

A gate-source voltage of 10 V is required to achieve the typical R_DS(on) of 54 mΩ at I_D = 18 A and T_j = 25 °C, as stated in Table 1 (Quick reference data) and Table 6 (Characteristics). Operation below 8 V results in significant R_DS(on) increase and higher conduction loss.