NXP Semiconductors PHP3055E,127

Overview

PHP3055E,127 from NXP Semiconductors (formerly Philips) is an N-channel standard-level TrenchMOS™ power MOSFET in SOT78 (TO-220AB) package, rated for 60 V drain-source voltage, 10.3 A DC drain current at 25 °C mounting base temperature, and 120–150 mΩ R_DS(on) at V_GS = 10 V and I_D = 5.5 A. It serves as a main switching element in high-efficiency DC-DC converters and switch-mode power supplies.

For engineers reviewing the PHP3055E,127 datasheet, PHP3055E,127 pinout, PHP3055E,127 application, or PHP3055E,127 equivalent, key selection criteria include its 4.5 K/W junction-to-mounting-base thermal resistance, avalanche ruggedness of 25 mJ (unclamped inductive), fast switching with 3–10 ns turn-on delay and 10–20 ns fall time, and compatibility with 5 V gate drive in standard-level configurations.

Technical Context

This device uses TrenchMOS™ technology to achieve low on-resistance and fast switching performance without requiring logic-level gate drive. Its gate threshold voltage ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, supporting stable operation across industrial temperature extremes.

The source-drain diode exhibits 1.1–1.5 V forward voltage at 10 A and 32 ns reverse recovery time, enabling synchronous rectification support in buck topologies. Avalanche capability is characterized under unclamped inductive conditions (ID = 3.3 A, t_AL = 0.22 ms, V_DD ≤ 25 V), confirming robustness in hard-switched applications.

Key Specifications

Pinout & Package

SOT78 (TO-220AB) plastic single-ended package with isolated mounting base electrically connected to drain (pin 2). Mounting base provides primary thermal path; pins 1 (gate), 2 (drain), and 3 (source) are arranged vertically with pin 2 centered and tab-integrated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IRFZ44NPBF, PHP3055E,127 delivers optimal balance of low gate charge, moderate current rating, and proven avalanche ruggedness-making it uniquely suited for compact, high-frequency, thermally constrained 10–50 W power stages where driver efficiency and transient robustness are critical.

Availability

PHP3055E,127 is available at Aetrix Electronics and suitable for DC-DC converters, switch-mode power supplies, and motor control circuits requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from original manufacturer stock.

Supply support for PHP3055E,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions, automotive MCUs, and analog/power components formerly developed by Philips Semiconductors.

The PHP3055E,127 belongs to the TrenchMOS™ standard-level power MOSFET product line, engineered for high-efficiency, medium-power switching applications in industrial power supplies and embedded power management systems.

FAQ

What is the maximum continuous drain current rating for PHP3055E,127 at 100 °C mounting base temperature?

The PHP3055E,127 supports 7.3 A DC drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 3 (Limiting Values). This derating reflects thermal constraints of the SOT78 package and must be applied in designs without forced-air cooling or oversized heatsinks. The PHP3055E,127 maintains full functionality across this range without parameter shift beyond datasheet limits.

Does PHP3055E,127 require a logic-level gate drive, or can it operate with standard 5 V microcontroller outputs?

PHP3055E,127 is a standard-level MOSFET with V_GS(th) of 2–4 V at 25 °C, making it fully compatible with 5 V logic-level gate drive. It delivers 10.3 A drain current at V_GS = 5 V (per Figure 7 transfer characteristics), though R_DS(on) increases to ~200 mΩ. For lowest conduction loss, 10 V drive is recommended-but 5 V operation is validated and widely used in cost-sensitive SMPS designs.

What is the thermal resistance from junction to mounting base (R_th(j-mb)) for PHP3055E,127, and how does it impact heatsink design?

The PHP3055E,127 has a maximum R_th(j-mb) of 4.5 K/W, measured from silicon junction to the isolated mounting base (pin 2/tab). This value enables direct bolt-down heatsinking with minimal interface resistance. For example, at 33 W dissipation and 25 °C ambient, a 4.5 K/W heatsink keeps junction temperature at 167.5 °C-within the 175 °C limit. The PHP3055E,127's low R_th(j-mb) eliminates need for thermal vias or copper pours in most PCB layouts.

Can PHP3055E,127 be used in avalanche-mode operation, and what is its rated non-repetitive energy?

Yes, PHP3055E,127 is rated for non-repetitive avalanche operation with E_DS(AL)S = 25 mJ under unclamped inductive load conditions (ID = 3.3 A, t_AL = 0.22 ms, V_DD ≤ 25 V). This specification is verified per JEDEC JESD24-11 and enables use in circuits with inductive kickback, such as relay drivers or PFC boost stages, without external clamping. The PHP3055E,127's avalanche capability is not intended for repetitive stress.

Is PHP3055E,127 pin-compatible with other TO-220AB MOSFETs, and what are the critical layout considerations?

PHP3055E,127 uses standard SOT78 (TO-220AB) mechanical outline with 2.54 mm lead pitch and identical mounting hole placement, ensuring physical compatibility with TO-220AB footprints. Critical layout considerations include isolating the mounting base (pin 2/drain) from PCB ground planes unless intentionally tied to high-side drain net, and minimizing gate loop inductance-especially given its 5.8 nC Q_g. The PHP3055E,127's pin 2 connection to the tab requires careful thermal pad isolation in PCB design.