Nexperia USA Inc. PHP33NQ20T,127
- Part No.:
- PHP33NQ20T,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP33NQ20T,127.pdf
- Description:
- MOSFET N-CH 200V 32.7A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,389
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Product details
Overview
PHP33NQ20T from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 200 V VDS, 32.7 A continuous drain current at Tmb = 25 °C, and 230 W total power dissipation. It serves as a main switching element in high-efficiency DC-to-DC converters, leveraging low RDS(on) (65 mΩ typ. @ 10 V, 15 A, 25 °C) and fast switching (tr = 35 ns, tf = 45 ns).
For engineers reviewing the PHP33NQ20T datasheet, PHP33NQ20T pinout, PHP33NQ20T application, or PHP33NQ20T equivalent, key selection criteria include thermal resistance to mounting base (Rth(j-mb) = 0.65 K/W), gate charge (QG(tot) = 32.2 nC), avalanche energy rating (EAS = 190 mJ), and safe operating area (SOA) compliance up to 65.4 A pulsed drain current.
Technical Context
This MOSFET employs TrenchMOS technology to achieve low on-resistance and high ruggedness. Its gate threshold voltage (VGS(th)) ranges from 2–4 V at 25 °C, enabling reliable turn-on with standard 10 V gate drive while maintaining robustness against spurious conduction at elevated temperatures (VGS(th) ≥1 V at 175 °C).
The device integrates a body diode with VSD = 0.87–1.2 V at 25 A and reverse recovery time (trr) of 150 ns, supporting synchronous rectification and freewheeling in hard-switched topologies. Its SOA is defined for both continuous and pulsed operation, with RDS(on)-limited boundary extending to 100 V at DC and 10 µs pulses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Maximum blocking voltage before avalanche; supports 170 V nominal bus designs with 15% margin. |
| RDS(on) | 65 mΩ typ. @ 10 V, 15 A, 25 °C - Enables <1 W conduction loss at 40 A, critical for high-current DC/DC stages. |
| QG(tot) | 32.2 nC - Determines gate driver power requirement; compatible with common 1-A peak drivers at ≤500 kHz. |
| tr/tf | 35 ns / 45 ns - Supports >1 MHz switching with minimal overlap loss in hard-switched converters. |
| Rth(j-mb) | 0.65 K/W - Enables 150 W dissipation with ≤100 K rise above heatsink, simplifying thermal design. |
| EAS | 190 mJ - Withstands unclamped inductive switching events without failure under specified test conditions. |
| Ciss | 1870 pF - Influences gate drive loop stability and Miller effect; requires careful PCB layout for high-speed use. |
Pinout & Package
PHP33NQ20T uses the SOT78 (TO-220AB) plastic single-ended package with heatsink-mounted base. The mounting base (mb) is electrically connected to the drain terminal, requiring isolation when mounted to grounded heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control electrode; accepts 10 V logic-level drive; QGS = 6.5 nC enables fast turn-on with low gate loss. |
| 2 (D) | Drain | Main high-side current path; internally bonded to mounting base-requires insulating washer if heatsink is grounded. |
| 3 (S) | Source | Reference node for gate drive and current sensing; low-inductance connection essential for stable switching. |
Key Features
| Feature | Design Value |
|---|---|
| Low thermal resistance to mounting base | Rth(j-mb) = 0.65 K/W reduces heatsink size and cost in space-constrained power supplies. |
| Fast switching with low gate charge | QG(tot) = 32.2 nC and tr/tf ≤45 ns enable high-frequency operation with minimized switching loss. |
| TrenchMOS-enhanced ruggedness | 190 mJ non-repetitive avalanche energy allows reliable operation during transient overloads and inductive kickback. |
| Body diode with controlled recovery | trr = 150 ns and Qr = 645 nC support efficient freewheeling in buck and half-bridge topologies. |
| Wide temperature operation | Rated for Tj = −55 to +175 °C and VGS(th) shift ≤3 V across range-ensures stable gate control in industrial environments. |
Applications
| DC-DC Buck Converter | Industrial Motor Drive Half-Bridge |
|---|---|
|
Use Scenario: Primary switch in 48 V input, 12 V output synchronous buck converter delivering up to 40 A. IC Role / Device Role / Timing Role: High-side power switch operating at 300–500 kHz with gate-driven synchronous rectification. Use Value: 65 mΩ RDS(on) limits conduction loss to <1.05 W at 40 A, while 35 ns rise time minimizes transition loss at 500 kHz. |
Use Scenario: Upper-leg switch in 24–48 V industrial BLDC motor drive inverter stage. IC Role / Device Role / Timing Role: Hard-switched high-side FET in three-phase bridge, commutated at ≤20 kHz. Use Value: 200 V rating provides 2× bus voltage margin; 190 mJ EAS withstands inductive flyback during fault conditions. |
| Telecom AC-DC Front-End | Server VRM High-Current Phase |
|
Use Scenario: Active clamp switch in telecom rectifier PFC stage handling 3 kW output. IC Role / Device Role / Timing Role: Clamping switch synchronized to main boost FET, operating at 100–200 kHz. Use Value: Low Coss (230 pF) and Crss (70 pF) reduce capacitive losses and improve ZVS behavior in resonant clamping. |
Use Scenario: Single-phase power stage in 12 V → 0.8 V server VRM delivering 120 A per phase. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch in multiphase buck topology with interleaved timing. Use Value: 230 W Ptot and 0.65 K/W Rth(j-mb) allow full-load operation with compact heatsink and forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP33NF20 | Same VDS (200 V), higher RDS(on) (75 mΩ typ.), higher QG (45 nC), TO-220FP package with insulated tab. | Lower switching speed and higher conduction loss; better suited for lower-frequency (<100 kHz), thermally constrained layouts. | Select when electrical isolation from heatsink is required and gate drive capability exceeds 1.5 A peak. |
| IRF3205 | Lower VDS (55 V), much lower RDS(on) (8.0 mΩ), higher ID (110 A), TO-220AB package. | Not suitable for 200 V systems; only applicable in ≤48 V DC/DC or motor drives where voltage stress is low. | Choose only for low-voltage, ultra-high-current applications where 200 V rating is unnecessary and RDS(on) dominates loss budget. |
Compared with STP33NF20 and IRF3205, PHP33NQ20T delivers optimal balance of 200 V rating, 65 mΩ conduction resistance, and 32.2 nC gate charge-making it uniquely suited for mid-voltage, medium-frequency industrial and telecom power conversion where both voltage margin and switching efficiency matter.
Availability
PHP33NQ20T is available at Aetrix Electronics and suitable for DC-to-DC convertors, industrial motor drives, telecom power supplies, and server VRMs requiring stable component supply and long-term manufacturability.
Supply support for PHP33NQ20T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, spun off from NXP in 2017 and headquartered in Nijmegen, Netherlands.
This device belongs to Nexperia's TrenchMOS power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in computing, communications, and industrial equipment.
FAQ
Is PHP33NQ20T a logic-level MOSFET?
No-it is a standard-level MOSFET requiring ≥10 V gate drive for full enhancement. Its VGS(th) is 2–4 V at 25 °C, but RDS(on) is specified only at VGS = 10 V. Driving below 8 V results in significantly higher on-resistance and thermal stress.
Can PHP33NQ20T be used in synchronous rectification?
Yes-the integrated body diode has trr = 150 ns and Qr = 645 nC, making it suitable for synchronous rectification in buck converters up to ~300 kHz. However, external Schottky or MOSFET-based synchronous rectifiers yield lower loss in high-frequency, high-current designs.
What is the maximum continuous drain current at 100 °C mounting base temperature?
Per Figure 1 in the datasheet, the normalized ID derating factor at Tmb = 100 °C is ~70%. Since ID = 32.7 A at 25 °C, the maximum continuous drain current at 100 °C is approximately 23.1 A-matching the limiting value table entry for Tmb = 100 °C.
Does the mounting base require electrical isolation from the heatsink?
Yes-the mounting base (mb) is internally connected to the drain (Pin 2). If the heatsink is grounded or at a different potential than the drain circuit, an electrically isolating pad (e.g., mica or polymer film) must be used to prevent short circuits and ensure safe operation.
PHP33NQ20T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 32.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 77mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 32.2 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1870 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP33NQ20T,127 FAQ
1.How can I place an order for PHP33NQ20T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP33NQ20T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP33NQ20T,127 reliable?
The price and inventory of PHP33NQ20T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP33NQ20T,127 is usually 5 days.
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Once your PHP33NQ20T,127 order is processed, you will receive an email with the shipment details and tracking number.
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5.How can I obtain technical support or documentation for PHP33NQ20T,127?
For technical support, including PHP33NQ20T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP33NQ20T,127 requirements.
6.How does Aetrix verify that PHP33NQ20T,127 is sourced from the original manufacturer or authorized distributors?
All PHP33NQ20T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP33NQ20T,127 meets industry standards.
7.What is the process for return or replacement of PHP33NQ20T,127?
All PHP33NQ20T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP33NQ20T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP33NQ20T,127 part is unused and in its original packaging.
Return procedure for PHP33NQ20T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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