My Inquiry
My Account
NXP Semiconductors PHP34NQ11T,127
- Part No.:
- PHP34NQ11T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP34NQ11T,127.pdf
- Description:
- MOSFET N-CH 110V 35A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:6,843
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PHP34NQ11T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in TO-220AB (SOT78) package, rated for 110 V VDS, 35 A continuous drain current at Tmb = 25 °C, and 40 mΩ maximum RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a main switching element in high-efficiency DC-DC converters and switched-mode power supplies.
For engineers reviewing the PHP34NQ11T datasheet, PHP34NQ11T pinout, PHP34NQ11T application, or PHP34NQ11T equivalent, this page delivers verified electrical parameters, thermal resistance (Rth(j-mb) = 1.1 K/W), avalanche energy rating (115 mJ), gate charge profile (Qg(tot) = 40 nC), and diode recovery characteristics (trr = 76 ns) critical for hard-switching and synchronous rectification design validation.
Technical Context
This device employs TrenchMOS™ technology to achieve low on-state resistance and low thermal resistance-enabling high-current conduction with minimal conduction loss and efficient heat transfer to the heatsink via its mounting base. Its gate threshold voltage (VGS(th) = 2–4 V at Tj = 25 °C) supports standard 10 V gate drive, while its 110 V breakdown voltage ensures robustness in 48 V and 100 V bus applications.
The source-drain body diode exhibits VSD = 0.85–1.5 V at IS = 17 A and trr = 76 ns under specified dIS/dt conditions, making it suitable for freewheeling and asynchronous rectification. Its safe operating area (SOA) supports pulsed peak drain currents up to 140 A with defined pulse width and duty cycle limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 110 V - Maximum drain-source blocking voltage; defines usable input voltage range in buck/boost topologies. |
| RDS(on) | ≤40 mΩ @ VGS = 10 V, Tj = 25 °C - Directly determines I²R conduction loss at full load; increases to ≤108 mΩ at 175 °C. |
| ID (continuous) | 35 A @ Tmb = 25 °C - Continuous current capability when mounted on heatsink; derates to 25 A at Tmb = 100 °C. |
| Ptot | 136 W @ Tmb = 25 °C - Total power dissipation limit; constrained by Rth(j-mb) = 1.1 K/W and heatsink interface quality. |
| Qg(tot) | 40 nC - Total gate charge required for full turn-on; impacts gate driver sizing and switching loss in PWM operation. |
| EDS(AL)S | 115 mJ - Non-repetitive unclamped inductive avalanche energy; enables robustness against inductive switching transients. |
| trr | 76 ns - Reverse recovery time of integrated body diode; affects commutation loss and EMI in hard-switched converters. |
Pinout & Package
PHP34NQ11T uses the SOT78 (TO-220AB) plastic single-ended package with heatsink mounting and three leads. The mounting base (MB) is electrically connected to the drain terminal and serves as both mechanical attachment point and primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires ≥10 V for full enhancement; gate leakage <100 nA at ±10 V. |
| 2 (Drain) | High-side power terminal | Connected internally to mounting base; carries main load current and dissipates heat directly to heatsink. |
| 3 (Source) | Reference and return path | Common node for gate drive reference and load return; forms source-drain diode anode (source) / cathode (drain). |
| Mounting Base (MB) | Drain extension & thermal interface | Electrically tied to Pin 2 (Drain); must be insulated from chassis if drain is not ground-referenced; critical for thermal performance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 40 mΩ RDS(on) at 110 V rating-superior conduction efficiency vs. planar MOSFETs in same voltage class. |
| Low Rth(j-mb) | 1.1 K/W thermal resistance from junction to mounting base-minimizes temperature rise under high-power operation with proper heatsinking. |
| Avalanche-rated | 115 mJ non-repetitive drain-source avalanche energy-tolerates inductive energy spikes without failure in SMPS flyback or forward converters. |
| Fast body diode | 76 ns reverse recovery time and 240 nC recovered charge-reduces switching loss and ringing during diode commutation. |
| Standard-level gate drive | 2–4 V VGS(th) and full enhancement at 10 V-compatible with common PWM controllers and gate drivers without level-shifting. |
Applications
| DC-DC Buck Converter | Industrial SMPS Primary Switch |
|---|---|
|
Use Scenario: Step-down conversion from 48 V or 100 V input to 12 V/24 V output in telecom and industrial power systems. IC Role / Device Role / Timing Role: High-side synchronous or asynchronous switch controlling energy transfer through inductor. Use Value: Low RDS(on) reduces conduction loss at high load currents; avalanche rating protects against transformer leakage inductance spikes. |
Use Scenario: Primary-side switching in 200–500 W offline flyback or forward converters with universal AC input. IC Role / Device Role / Timing Role: Main power switch turning on/off at 50–100 kHz to regulate output voltage via feedback loop. Use Value: 110 V VDS margin accommodates reflected output voltage + clamp overshoot; 136 W Ptot supports high-duty-cycle operation. |
| Motor Drive Half-Bridge | Hot-Swap OR-ing FET |
|
Use Scenario: Low-voltage BLDC or stepper motor phase switching in 24–48 V battery-powered equipment. IC Role / Device Role / Timing Role: Low-side or high-side switch in half-bridge configuration driving inductive motor windings. Use Value: Fast tr/tf (55 ns/38 ns) and low Qgd (18 nC) enable clean switching with reduced shoot-through risk and EMI. |
Use Scenario: Redundant power supply OR-ing in servers and telecom systems using back-to-back configuration. IC Role / Device Role / Timing Role: Forward-conducting MOSFET replacing Schottky diode to reduce voltage drop and power loss. Use Value: 35 A continuous current and low VSD (0.85 V typ.) cut conduction loss by >50% vs. diode-based OR-ing solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP36NF10 | 100 V VDS, 36 A ID, RDS(on) = 30 mΩ @ 10 V - lower voltage rating but lower on-resistance. | Preferred where input voltage ≤ 80 V; less margin for 100 V transient clamping. | Select STP36NF10 for higher efficiency at lower bus voltages; verify SOA and avalanche rating for inductive loads. |
| IRF3205 | 55 V VDS, 110 A ID, RDS(on) = 8 mΩ @ 10 V - significantly lower voltage rating, higher current capacity. | Not suitable for 100 V applications; limited to ≤ 48 V systems with high peak current demands. | Choose IRF3205 only in 12–48 V designs requiring ultra-low RDS(on); avoid in 100 V environments due to insufficient breakdown margin. |
Compared with STP36NF10 and IRF3205, PHP34NQ11T provides optimal balance of 110 V blocking capability, 40 mΩ on-resistance, and proven avalanche ruggedness-making it uniquely suited for 48–100 V industrial and telecom SMPS where voltage margin and reliability are critical.
Availability
PHP34NQ11T is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and motor drive circuits requiring stable component supply across long-lifecycle industrial programs.
Supply support for PHP34NQ11T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips Semiconductors in 2006, specializing in high-performance analog, logic, and power devices for automotive, industrial, and communications markets.
The PHP34NQ11T belongs to NXP's legacy TrenchMOS™ power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control applications.
FAQ
What is the maximum continuous drain current rating for PHP34NQ11T?
The PHP34NQ11T supports 35 A continuous drain current at mounting base temperature (Tmb) = 25 °C and VGS = 10 V. This rating drops to 25 A at Tmb = 100 °C due to thermal derating. Actual current handling depends on heatsink performance, PCB copper area, and ambient conditions-designers must verify junction temperature stays within −55 °C to +175 °C limits using Rth(j-mb) = 1.1 K/W.
Does PHP34NQ11T have avalanche capability, and how is it specified?
Yes, PHP34NQ11T is rated for non-repetitive drain-source avalanche energy (EDS(AL)S) of 115 mJ under defined test conditions: unclamped inductive load, ID = 34 A, pulse width tp = 0.05 ms, VDD ≤ 100 V, RGS = 50 Ω, VGS = 10 V, starting at Tj = 25 °C. This specification confirms ruggedness against transient overvoltage events in SMPS and motor drive circuits.
What is the gate threshold voltage range for PHP34NQ11T, and how does it vary with temperature?
The gate-source threshold voltage (VGS(th)) of PHP34NQ11T is specified as 2–4 V at Tj = 25 °C, 1–? V at Tj = 175 °C (min only given), and up to 4.4 V at Tj = −55 °C. This negative temperature coefficient ensures stable turn-on behavior across industrial temperature ranges and supports reliable operation with standard 10 V gate drivers.
Can PHP34NQ11T be used in synchronous rectification applications?
PHP34NQ11T is not optimized for synchronous rectification due to its standard-level gate drive requirement and relatively high body diode VSD (0.85–1.5 V). While its 76 ns trr and 240 nC Qr allow basic freewheeling, dedicated logic-level or fast-recovery MOSFETs with lower VGS(th) and tighter diode specs are preferred for high-frequency synchronous rectifier designs.
What is the thermal resistance from junction to mounting base for PHP34NQ11T?
The thermal resistance from junction to mounting base (Rth(j-mb)) for PHP34NQ11T is 1.1 K/W maximum, as specified in Table 4 of the datasheet. This value reflects the intrinsic thermal path through the die, bond wires, and package to the heatsink-mounting surface-critical for calculating junction temperature rise under steady-state power dissipation.
PHP34NQ11T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 110 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP34NQ11T,127 FAQ
1.How can I place an order for PHP34NQ11T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP34NQ11T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP34NQ11T,127 reliable?
The price and inventory of PHP34NQ11T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP34NQ11T,127 is usually 5 days.
3.What payment methods are accepted for PHP34NQ11T,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP34NQ11T,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHP34NQ11T,127?
PHP34NQ11T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHP34NQ11T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP34NQ11T,127?
For technical support, including PHP34NQ11T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP34NQ11T,127 requirements.
6.How does Aetrix verify that PHP34NQ11T,127 is sourced from the original manufacturer or authorized distributors?
All PHP34NQ11T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP34NQ11T,127 meets industry standards.
7.What is the process for return or replacement of PHP34NQ11T,127?
All PHP34NQ11T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP34NQ11T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP34NQ11T,127 part is unused and in its original packaging.
Return procedure for PHP34NQ11T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PHP34NQ11T,127 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
