Nexperia USA Inc. PHP36N03LT,127
- Part No.:
- PHP36N03LT,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP36N03LT,127.pdf
- Description:
- MOSFET N-CH 30V 43.4A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:8,310
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Product details
Overview
PHP36N03LT from Nexperia is a logic-level N-channel TrenchMOS power FET in TO-220AB (SOT78) package, designed for high-efficiency switching in DC-DC converters and SMPS. It delivers 43.4 A continuous drain current at VGS = 10 V and Tmb = 25 °C, with RDS(on) = 14 mΩ (typ.) at 25 °C, 25 A, and supports 30 V VDS rating.
For engineers reviewing the PHP36N03LT datasheet, PHP36N03LT pinout, PHP36N03LT application, or PHP36N03LT equivalent, key selection criteria include gate-threshold voltage (VGS(th) = 1.0–1.5 V typ. at 25 °C), low QGD (2.9 nC), thermal resistance Rth(j-mb) = 2.6 K/W, and suitability for logic-level drive in high-current, medium-voltage power stages.
Technical Context
This device implements trench-gate MOSFET architecture optimized for low gate charge (QG(tot) = 18.5 nC) and fast switching (td(on) = 6 ns, tf = 19 ns), enabling high-frequency operation in synchronous buck converters. Its RDS(on) remains stable across temperature due to TrenchMOS process control, with 32.4 mΩ (max) at 175 °C and VGS = 4.5 V.
The integrated source-drain diode exhibits VSD = 0.97–1.2 V at IS = 25 A and 25 °C, supporting freewheeling in non-synchronous topologies. Mounting base (pin 2) is electrically connected to drain, requiring isolation from heatsink unless referenced to drain potential.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines use in ≤24 V input systems with margin. |
| ID (continuous) | 43.4 A at Tmb = 25 °C, VGS = 10 V - Supports high-current output stages without forced air cooling. |
| RDS(on) | 14 mΩ (typ.) at VGS = 10 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 25 A, critical for thermal management. |
| QGD | 2.9 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency. |
| Rth(j-mb) | 2.6 K/W - Junction-to-mounting-base thermal resistance enables direct heatsink coupling for high-power dissipation (57.6 W). |
| VGS(th) | 1.0–1.5 V (typ.) at 25 °C - Ensures full enhancement with 3.3 V or 5 V logic-level gate drivers without level-shifting. |
| Ciss | 690 pF - Input capacitance determines gate drive strength requirement; compatible with standard MOSFET drivers. |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base (pin 2), 3-lead configuration. Mounting base is electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level voltages (≥3.5 V) for full enhancement; low QG reduces driver loading. |
| 2 (D / mb) | Drain / Mounting Base | Main high-side current path; mounting base is internally tied to drain - requires electrical isolation from heatsink unless drain-referenced. |
| 3 (S) | Source | Power return node; referenced to system ground in low-side switch configurations; carries full load current. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Operates fully enhanced at VGS ≥ 4.5 V, enabling direct interface with 3.3 V/5 V microcontrollers and PWM controllers. |
| Low gate charge (QG(tot)) | 18.5 nC total gate charge reduces switching losses and allows higher frequency operation without excessive driver power. |
| TrenchMOS technology | Delivers lower RDS(on) per die area versus planar MOSFETs, improving power density and thermal performance in TO-220AB. |
| High peak current capability | IDM = 173.6 A (pulsed, tp ≤ 10 µs) supports surge handling in motor drives and inrush-limited power supplies. |
| Robust thermal design | Rth(j-mb) = 2.6 K/W enables >50 W continuous dissipation with properly sized heatsink, reducing need for derating. |
Applications
| DC-DC Converters | Switched-Mode Power Supplies |
|---|---|
|
Use Scenario: Synchronous rectification in 12 V input, 3.3 V/5 V output buck converters for server VRMs and telecom modules. IC Role / Device Role: Low-side power switch handling continuous 30+ A output current with minimal conduction loss. Use Value: 14 mΩ RDS(on) limits I²R loss to <1.1 W at 25 A, directly improving conversion efficiency and easing thermal design. |
Use Scenario: Primary-side switching in offline AC-DC adapters and industrial power supplies with universal input (85–265 VAC). IC Role / Device Role: High-current, medium-voltage switch in flyback or forward converter primary circuits operating below 30 V clamp conditions. Use Value: 30 V VDS rating with 173.6 A pulsed current supports robust operation under transient overloads and reflected voltage spikes. |
| Motor Drive Half-Bridges | Hot-Swap Controllers |
|
Use Scenario: Low-side switch in brushed DC motor H-bridge drivers for industrial automation and robotics. IC Role / Device Role: Bidirectional current-handling switch with integrated body diode for freewheeling during PWM off-time. Use Value: VSD = 0.97 V at 25 A ensures low forward drop during freewheeling, reducing heat generation compared to external Schottky solutions. |
Use Scenario: Inrush current limiting and fault protection in 12 V/24 V backplane power distribution units. IC Role / Device Role: Load switch controlling hot-plug insertion of FRUs (Field Replaceable Units) into live backplanes. Use Value: Logic-level gate threshold and low RDS(on) allow precise, low-loss current limiting using simple gate resistor + Zener clamping networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF3205PBF | RDS(on) = 8.0 mΩ (typ.) at VGS = 10 V but VGS(th) = 2.0–4.0 V - requires ≥5 V drive for reliable turn-on. | Higher gate threshold increases risk of partial turn-on in 3.3 V systems; better suited for 5 V controller designs. | Select when lower RDS(on) is prioritized and gate drive is guaranteed ≥5 V; avoid in 3.3 V logic-driven systems. |
| STP36NF03L | RDS(on) = 13 mΩ (typ.) at VGS = 10 V; VGS(th) = 1.0–2.5 V; QGD = 3.8 nC - higher Miller charge than PHP36N03LT. | Increased QGD raises switching losses in high-frequency (>300 kHz) SMPS; otherwise functionally interchangeable. | Prefer for cost-sensitive designs where switching frequency ≤200 kHz; PHP36N03LT offers superior high-frequency efficiency. |
Compared with IRF3205PBF and STP36NF03L, PHP36N03LT provides optimal balance of logic-level compatibility (VGS(th) ≤ 1.5 V), low QGD, and proven thermal robustness in TO-220AB - making it preferred for compact, high-efficiency 3.3 V/5 V-controlled power stages.
Availability
PHP36N03LT is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and motor drive half-bridges requiring stable component supply, long-term manufacturability, and qualified industrial-grade reliability.
Supply support for PHP36N03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.
PHP36N03LT belongs to Nexperia's TrenchMOS logic-level power FET product line, engineered specifically for efficient, compact, and thermally robust switching in mid-power industrial and communications power supplies.
FAQ
Is PHP36N03LT suitable for 3.3 V microcontroller gate drive?
Yes. With VGS(th) = 1.0–1.5 V (typ.) at 25 °C and RDS(on) = 22–40 mΩ at VGS = 3.5 V and ID = 5.2 A, PHP36N03LT achieves usable on-resistance under 3.3 V drive. Full enhancement occurs at ≥4.5 V, so 3.3 V operation is viable for moderate-current applications with acceptable RDS(on) increase.
What is the maximum safe operating temperature for continuous operation?
The junction temperature must not exceed 175 °C. At Tmb = 100 °C, the rated continuous drain current drops to 30.7 A (VGS = 10 V). Using Rth(j-mb) = 2.6 K/W, a 50 °C temperature rise above mounting base corresponds to ~19.2 W power dissipation - confirming thermal derating is required above Tmb ≈ 75 °C for full 43.4 A operation.
Can the mounting base be electrically connected to the PCB ground plane?
No - pin 2 (mounting base) is internally connected to the drain. Connecting it to PCB ground creates a short circuit unless the drain node is ground-referenced. For low-side switch configurations, isolate the mounting base with mica or ceramic washer; for high-side use, mount directly to a drain-potential heatsink.
Does PHP36N03LT have avalanche ruggedness rating?
No avalanche energy rating (EAS) is specified in the datasheet. The device is characterized per IEC 60134 absolute maximum ratings only. It is not rated for repetitive unclamped inductive switching; external snubbers or clamping circuits are required in inductive load applications to prevent drain voltage overshoot beyond 30 V.
PHP36N03LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 43.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 17mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 690 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57.6W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP36N03LT,127 FAQ
1.How can I place an order for PHP36N03LT,127 through Aetrix?
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For technical support, including PHP36N03LT,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP36N03LT,127 requirements.
6.How does Aetrix verify that PHP36N03LT,127 is sourced from the original manufacturer or authorized distributors?
All PHP36N03LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP36N03LT,127 meets industry standards.
7.What is the process for return or replacement of PHP36N03LT,127?
All PHP36N03LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP36N03LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP36N03LT,127 part is unused and in its original packaging.
Return procedure for PHP36N03LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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