NXP Semiconductors PHP45NQ15T,127
- Part No.:
- PHP45NQ15T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP45NQ15T,127.pdf
- Description:
- MOSFET N-CH 150V 45.1A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:7,775
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PHP45NQ15T,127 from NXP Semiconductors (formerly Philips Semiconductors) is a standard-level N-channel TrenchMOS™ power MOSFET in TO-220AB (SOT78) package, rated for 150 V VDS, 45.1 A continuous drain current at Tmb = 25 °C, and 42 mΩ maximum RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a primary-side switching device in DC-to-DC converters and secondary-side rectifier in AC-to-DC supplies.
For engineers reviewing the PHP45NQ15T,127 datasheet, PHP45NQ15T,127 pinout, PHP45NQ15T,127 application, or PHP45NQ15T,127 equivalent, key selection criteria include its low gate charge (Qgd = 10.3 nC typ), avalanche ruggedness (180 mJ unclamped), thermal resistance (Rth(j-mb) = 0.65 K/W), fast switching (tr = 22 ns), and mounting-base–referenced thermal path.
Technical Context
This MOSFET employs TrenchMOS™ technology to achieve low on-state resistance and high switching efficiency. Its gate threshold voltage (VGS(th)) ranges from 2 V to 4 V at 25 °C, enabling reliable turn-on with standard 10 V gate drive while maintaining robustness against spurious conduction at elevated temperatures.
The device features an integrated source-drain diode with 0.88–1.2 V forward voltage at 25 A and 115 ns reverse recovery time, supporting synchronous rectification and freewheeling functions. Its safe operating area (SOA) supports pulsed peak drain current up to 90.2 A (tp ≤ 10 µs) and unclamped inductive avalanche energy of 180 mJ under defined test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum drain-source blocking voltage; suitable for 100–120 VAC input-derived bus rails and 48 V industrial systems. |
| ID (continuous) | 45.1 A at Tmb = 25 °C - Continuous conduction capability with heatsink; derates to 31.9 A at Tmb = 100 °C. |
| RDS(on) | ≤42 mΩ at VGS = 10 V, Tj = 25 °C - Low conduction loss enabling <1.5 W dissipation at 20 A, critical for high-efficiency SMPS. |
| Qgd | 10.3 nC (typ) - Low Miller charge reduces switching losses and improves EMI behavior during hard-switching transitions. |
| Rth(j-mb) | 0.65 K/W - Thermal resistance from junction to mounting base; enables direct heatsink attachment for high-power operation. |
| EAS | 180 mJ (unclamped inductive) - Avalanche energy rating confirms ruggedness in inductive load switching without external snubbers. |
| tr/tf | 22 ns / 31 ns - Fast rise/fall times support >500 kHz switching frequencies in resonant and hard-switched topologies. |
Pinout & Package
PHP45NQ15T,127 uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and one mounting hole. The mounting base (mb) is electrically connected to the drain terminal and serves as the primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires 10 V drive for full enhancement; threshold range 2–4 V ensures compatibility with standard logic-level drivers. |
| 2 | Drain (D) | Main high-side current path; internally bonded to mounting base; must be isolated from PCB ground unless referenced to system high-side potential. |
| 3 | Source (S) | Power return node; defines reference for gate drive; connects to source-drain diode cathode in freewheeling mode. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 34–42 mΩ typical–max at 10 V drive enables <1.7 W conduction loss at 20 A, reducing heatsink size in compact PSUs. |
| Fast switching | 22 ns rise time and 31 ns fall time minimize transition losses, supporting high-frequency operation up to 1 MHz in LLC resonant converters. |
| Low thermal resistance | 0.65 K/W junction-to-mounting-base allows direct heatsink coupling, delivering 230 W total power dissipation at Tmb = 25 °C. |
| Low gate charge | Total gate charge Qg(tot) = 32 nC (typ) and Qgd = 10.3 nC reduce driver power requirements and improve gate drive stability. |
| Avalanche ruggedness | 180 mJ unclamped inductive avalanche energy permits reliable operation in flyback and forward converters without added clamping circuitry. |
Applications
| DC-to-DC Primary Switching | AC-to-DC Secondary Rectification |
|---|---|
|
Use Scenario: High-efficiency isolated DC-DC converter in telecom power modules, stepping down 48 V input to 12 V/5 V outputs. IC Role / Device Role / Timing Role: Primary-side power switch in forward or half-bridge topology; synchronized with PWM controller timing. Use Value: Low RDS(on) and fast switching reduce conduction and transition losses, achieving >92% efficiency at full load. |
Use Scenario: Secondary-side synchronous rectifier in offline AC-DC adapters for laptops and industrial equipment. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal. Use Value: 0.88 V VSD at 25 A cuts forward drop by ~40% vs. 45 V Schottky, improving light-load efficiency and thermal margin. |
| Motor Drive Half-Bridge | Industrial DC Bus Protection |
|
Use Scenario: Low-voltage BLDC motor driver in HVAC blowers and pump controllers, operating from 24–48 V DC bus. IC Role / Device Role / Timing Role: High-side or low-side switch in half-bridge leg; commutated at 10–20 kHz with dead-time control. Use Value: Avalanche rating and SOA support inductive kickback during PWM transitions, eliminating need for external flyback diodes. |
Use Scenario: Overcurrent protection switch in programmable power supplies and battery management systems. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay or fuse; controlled via microcontroller GPIO or dedicated driver IC. Use Value: 90.2 A pulsed IDM and 150 V VDS enable robust short-circuit interruption with minimal voltage drop during fault clearing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP45NF15 | Same VDS (150 V), higher RDS(on) (50 mΩ max), higher Qgd (14.5 nC), TO-220 package. | Slightly lower efficiency at high current; less suitable for high-frequency (>300 kHz) designs due to higher gate charge. | Acceptable where cost sensitivity outweighs efficiency targets; verify thermal design with higher RDS(on). |
| IRF450 | Legacy 500 V device; RDS(on) = 1.2 Ω (much higher), lower current rating (14 A), same TO-220 footprint. | Not interchangeable - intended for high-voltage, low-current applications; unsuitable for 45 A switching roles. | Only consider if redesigning for higher voltage and lower current; not a functional alternative for PHP45NQ15T,127 use cases. |
Compared with STP45NF15 and IRF450, PHP45NQ15T,127 delivers superior conduction efficiency, faster switching, and proven avalanche ruggedness-making it optimal for high-current, high-frequency DC-DC and AC-DC applications where thermal performance and reliability are critical.
Availability
PHP45NQ15T,127 is available at Aetrix Electronics and suitable for DC-to-DC converters, AC-to-DC power supplies, motor drives, and industrial power protection circuits requiring stable component supply and long-term manufacturability.
Supply support for PHP45NQ15T,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in high-performance analog, logic, and power devices, with roots in Philips Semiconductors' legacy power MOSFET portfolio.
The PHP45NQ15T,127 belongs to NXP's TrenchMOS™ standard-level power MOSFET family, engineered for high-efficiency switching in industrial, telecom, and consumer power conversion systems where low RDS(on), fast switching, and avalanche robustness are essential.
FAQ
What is the maximum continuous drain current rating for PHP45NQ15T,127?
The PHP45NQ15T,127 is rated for 45.1 A continuous drain current at mounting base temperature (Tmb) = 25 °C and VGS = 10 V. This rating decreases to 31.9 A at Tmb = 100 °C per the normalized derating curve in Figure 2 of the datasheet. Actual usable current depends on heatsink design and ambient conditions.
Does PHP45NQ15T,127 have avalanche capability, and how is it specified?
Yes, PHP45NQ15T,127 is rated for non-repetitive unclamped inductive avalanche energy of 180 mJ under defined test conditions (ID = 19.1 A, tp = 0.1 ms, VDD ≤ 150 V, RGS = 50 Ω, VGS = 10 V, starting at Tj = 25 °C). This specification confirms ruggedness in inductive switching applications like flyback converters without external snubbers.
What is the thermal resistance from junction to mounting base for PHP45NQ15T,127?
The thermal resistance from junction to mounting base (Rth(j-mb)) for PHP45NQ15T,127 is 0.65 K/W maximum. This value enables efficient heat transfer directly to an external heatsink mounted on the TO-220AB package's metal base, supporting up to 230 W total power dissipation at Tmb = 25 °C.
Can PHP45NQ15T,127 be used as a synchronous rectifier in AC-to-DC applications?
Yes, PHP45NQ15T,127 is explicitly cited for AC-to-DC secondary-side rectification. Its low RDS(on), fast switching (tr = 22 ns), and integrated source-drain diode (VSD = 0.88–1.2 V at 25 A) make it suitable for synchronous rectification when driven with appropriate gate timing relative to the transformer secondary waveform.
What are the gate drive requirements for reliable operation of PHP45NQ15T,127?
PHP45NQ15T,127 requires a minimum VGS of 10 V for full enhancement, with gate threshold voltage (VGS(th)) specified between 2 V and 4 V at 25 °C. Total gate charge is 32 nC (typ), and Miller charge Qgd is 10.3 nC (typ), indicating moderate drive strength requirements-compatible with standard MOSFET drivers such as TC4420 or UCC3732x series.
PHP45NQ15T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 45.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1770 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP45NQ15T,127 FAQ
1.How can I place an order for PHP45NQ15T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP45NQ15T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP45NQ15T,127 reliable?
The price and inventory of PHP45NQ15T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP45NQ15T,127 is usually 5 days.
3.What payment methods are accepted for PHP45NQ15T,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP45NQ15T,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHP45NQ15T,127?
PHP45NQ15T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHP45NQ15T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP45NQ15T,127?
For technical support, including PHP45NQ15T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP45NQ15T,127 requirements.
6.How does Aetrix verify that PHP45NQ15T,127 is sourced from the original manufacturer or authorized distributors?
All PHP45NQ15T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP45NQ15T,127 meets industry standards.
7.What is the process for return or replacement of PHP45NQ15T,127?
All PHP45NQ15T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP45NQ15T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP45NQ15T,127 part is unused and in its original packaging.
Return procedure for PHP45NQ15T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PHP45NQ15T,127 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

