NXP Semiconductors PHP55N03LTA,127

Overview

PHP55N03LTA from NXP Semiconductors (formerly Philips) is an N-channel logic-level TrenchMOS™ power MOSFET in SOT78 (TO-220AB) package, rated for 25 V V_DS, 55 A I_D (DC at T_mb = 25 °C), 11 mΩ R_DS(on) @ V_GS = 10 V, and 85 W P_tot. It serves as a high-efficiency synchronous rectifier or main switch in high-frequency DC–DC converters on computer motherboards.

For engineers reviewing the PHP55N03LTA datasheet, PHP55N03LTA pinout, PHP55N03LTA application, or PHP55N03LTA equivalent, this page delivers verified electrical specs, thermal resistance (R_th(j-mb) = 1.75 K/W), gate charge (Q_g(tot) = 20 nC), avalanche energy (60 mJ), and mounting-base–referenced derating curves - all critical for thermal design and switching loss estimation in 300–1000 kHz buck converters.

Technical Context

This device uses trench-gate silicon technology to achieve low R_DS(on) with logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V typ). Its gate threshold remains stable across −55 °C to +175 °C, enabling reliable turn-on under cold-start and high-temperature operation.

The integrated source-drain diode supports synchronous rectification with V_SD = 0.95 V @ I_S = 25 A, while its 220 A peak drain current rating and unclamped inductive avalanche capability (60 mJ) support robust transient handling in hard-switched topologies.

Key Specifications

Pinout & Package

PHP55N03LTA is housed in SOT78 (TO-220AB) plastic package with isolated mounting base electrically connected to drain. The package features three leads and a metal tab for mechanical attachment and thermal conduction to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRF540NPBF, PHP55N03LTA delivers 4× lower conduction loss and guaranteed avalanche capability; versus STP55NF03L, it offers 10 mJ higher unclamped energy rating and tighter V_GS(th) distribution - making it preferable for high-reliability motherboard and telecom POL designs.

Availability

PHP55N03LTA is available at Aetrix Electronics and suitable for computer motherboard VRMs, server CPU power delivery, and industrial PLC power supplies requiring stable component supply and long-lifecycle support.

Supply support for PHP55N03LTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, headquartered in Eindhoven, Netherlands.

The PHP55N03LTA belongs to the TrenchMOS™ Logic Level FET product line, engineered specifically for high-efficiency, high-frequency DC–DC conversion in space-constrained computing and communications infrastructure.

FAQ

What is the maximum continuous drain current rating for PHP55N03LTA at 100 °C mounting base temperature?

The PHP55N03LTA supports 38 A continuous drain current at T_mb = 100 °C, as specified in Table 3 "Limiting values" under ID conditions. This derated value reflects thermal constraints when heatsink temperature rises, and must be used in thermal design calculations alongside R_th(j-mb) = 1.75 K/W to ensure T_j ≤ 175 °C.

Does PHP55N03LTA have a specified reverse recovery time (t_rr) for its integrated body diode?

No, the PHP55N03LTA datasheet does not specify reverse recovery time (t_rr). It characterizes the source-drain diode only by forward voltage (V_SD = 0.95 V @ 25 A) and peak current (I_SM = 220 A), indicating optimization for hard-switched synchronous rectification rather than fast-recovery freewheeling applications.

Can PHP55N03LTA be used with a 3.3 V gate driver without external level shifting?

Yes, PHP55N03LTA is explicitly designed as a logic-level FET with V_GS(th) = 1.0–2.0 V (typical 1.5 V), enabling full enhancement using standard 3.3 V CMOS or TTL gate drivers. At V_GS = 3.3 V, R_DS(on) is approximately 20–25 mΩ - sufficient for many medium-duty applications, though 5 V drive yields optimal 15–18 mΩ performance.

What is the thermal resistance from junction to mounting base (R_th(j-mb)) for PHP55N03LTA, and how is it measured?

The PHP55N03LTA has R_th(j-mb) = 1.75 K/W, as listed in Table 4 "Thermal characteristics". This value is measured under transient conditions (Figure 4) with single-pulse heating and δ = 0.5 duty cycle, representing the dominant thermal path from silicon die to the metal mounting base - which must be attached to an external heatsink for effective power dissipation.

Is PHP55N03LTA suitable for avalanche-prone circuits such as inductive load switching or flyback snubbers?

Yes, PHP55N03LTA is rated for non-repetitive drain-source avalanche energy E_DS(AL)S = 60 mJ under defined test conditions (unclamped inductive load, I_D = 25 A, V_DD = 15 V, t_p = 0.1 ms). This makes it suitable for controlled avalanche operation in snubberless flyback designs or relay driving, provided single-pulse energy stays within limit and junction temperature remains below 175 °C.