NXP Semiconductors PHP71NQ03LT,127
- Part No.:
- PHP71NQ03LT,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP71NQ03LT,127.pdf
- Description:
- MOSFET N-CH 30V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,366
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Product details
Overview
PHP71NQ03LT,127 from NXP Semiconductors (formerly Philips) is an N-channel TrenchMOS™ logic-level power MOSFET in SOT78 (TO-220AB) package, rated for 30 V VDS, 75 A ID (Tmb = 25 °C), ≤10 mΩ RDS(on) at VGS = 10 V, and 120 W Ptot. It serves as a high-current, low-voltage switching element in DC-DC converters and switched-mode power supplies.
For engineers reviewing the PHP71NQ03LT,127 datasheet, PHP71NQ03LT,127 pinout, PHP71NQ03LT,127 application, or PHP71NQ03LT,127 equivalent, key selection criteria include gate-threshold voltage (1–2.5 V), thermal resistance to mounting base (1.25 K/W), safe operating area under pulsed conditions, and compatibility with 4.5 V logic-level drive without external level shifting.
Technical Context
This device uses TrenchMOS™ technology to achieve low RDS(on) and high current density in a through-hole TO-220AB package. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 2.5 V at 25 °C, enabling direct interface with 3.3 V and 5 V microcontrollers. The mounting base is internally connected to the drain, requiring electrical isolation when heatsink-mounted.
The SOA curve supports 240 A peak drain current (tp ≤10 µs) at VDS = 10 V, and dynamic parameters include 13.2 nC total gate charge, 4.6 nC Miller charge, and 1220 pF input capacitance - all optimized for high-efficiency, medium-frequency switching (≤500 kHz) in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum continuous drain-source blocking voltage; defines upper limit for buck converter input or motor drive bus voltage. |
| ID (DC) | 75 A at Tmb = 25 °C - Continuous current capability with adequate heatsinking; derates to 57.7 A at Tmb = 100 °C. |
| RDS(on) | ≤10 mΩ at VGS = 10 V - Low conduction loss enables <1.5 W dissipation at 38.7 A RMS, critical for thermal management in compact PSUs. |
| Qg(tot) | 13.2 nC - Total gate charge determines driver strength requirement; compatible with standard 1-A peak gate drivers at ≤300 kHz. |
| Rth(j-mb) | 1.25 K/W - Junction-to-mounting-base thermal resistance; enables ~96 °C temperature rise per 75 W dissipation with isolated heatsink. |
| VGS(th) | 1.0–2.5 V at 25 °C - Logic-level threshold ensures full enhancement with 3.3 V or 5 V GPIO, eliminating need for gate driver ICs in many applications. |
| Qrr | 20 nC - Recovered charge during body diode commutation; impacts efficiency and EMI in synchronous rectification and freewheeling paths. |
Pinout & Package
SOT78 (TO-220AB) package with isolated mounting base electrically tied to pin 2 (drain). Requires insulating washer or pad when mounted to grounded heatsink. Pin 1 = gate (G), Pin 2 = drain (D), Pin 3 = source (S); mounting base (MB) is integral with drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; accepts logic-level voltage (≥4.5 V) to fully enhance; low input capacitance (1220 pF) minimizes driver loading. |
| 2 | Drain (D) | Main power output terminal; internally bonded to mounting base - must be electrically isolated from heatsink unless system ground reference permits. |
| 3 | Source (S) | Power return path and reference for gate drive; low-inductance connection critical for minimizing switching ringing and shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with 4.5 V VGS, enabling direct MCU/GPIO control without level-shifting circuitry. |
| Low RDS(on) | ≤10 mΩ at 10 V drive reduces conduction losses by >30% vs. standard MOSFETs in 12 V/48 V systems. |
| TrenchMOS™ technology | Enables higher cell density and lower gate charge (13.2 nC), improving switching efficiency at 200–500 kHz. |
| Robust SOA | Supports 240 A pulsed drain current (10 µs) and 120 W continuous dissipation - suitable for overload and inrush current handling. |
| Integrated source-drain diode | Body diode with 29 ns trr and 20 nC Qr allows use in asynchronous rectification and flyback snubber paths. |
Applications
| DC-DC Buck Converter | Switched-Mode Power Supply (SMPS) |
|---|---|
Use Scenario: High-current step-down conversion from 12 V or 24 V input to 3.3 V/5 V rails in industrial PLCs and telecom equipment. IC Role / Device Role: Primary high-side synchronous rectifier switch, controlled by PWM controller with 5 V gate drive. Use Value: ≤10 mΩ RDS(on) limits conduction loss to <0.5 W at 7 A load, reducing heatsink size and improving power density. |
Use Scenario: Main power switch in 200–500 W open-frame AC/DC adapters and server auxiliary supplies. IC Role / Device Role: Primary switching FET in forward or half-bridge topology, driven by dedicated gate driver IC. Use Value: 120 W Ptot and 1.25 K/W Rth(j-mb) enable stable operation at full load with passive heatsinking. |
| Motor Drive Half-Bridge | Hot-Swap Controller |
Use Scenario: Low-voltage BLDC or stepper motor phase switching in battery-powered tools and robotics. IC Role / Device Role: Low-side switch in H-bridge configuration, driven directly by 3.3 V microcontroller outputs. Use Value: 1–2.5 V VGS(th) ensures reliable turn-on even with Li-ion battery sag to 3.0 V, preventing shoot-through failure. |
Use Scenario: Inrush current limiting and fault protection in 12 V/24 V backplane power distribution modules. IC Role / Device Role: Series pass element controlled by dedicated hot-swap controller (e.g., LTC4215). Use Value: 240 A peak current rating handles capacitor charging surges; low RDS(on) minimizes voltage drop during steady-state operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 8.0 mΩ @ 10 V; TO-220 package; higher Qg (27 nC); VGS(th) = 1.0–2.0 V. | Lower on-resistance but slower switching due to higher gate charge; better for low-frequency, high-current apps. | Prefer for ultra-low conduction loss where switching frequency ≤100 kHz and driver strength ≥2 A peak. |
| STP75NF3L | RDS(on) = 8.5 mΩ @ 10 V; TO-220; Qg = 105 nC; VGS(th) = 1.0–2.5 V; integrated avalanche ruggedness. | Higher gate charge increases driver demand; avalanche-rated for inductive load robustness. | Prefer for motor drives with frequent inductive switching or unclamped inductive loads requiring avalanche energy rating. |
Compared with IRL3803PBF and STP75NF3L, PHP71NQ03LT,127 offers balanced gate charge (13.2 nC) and RDS(on) (≤10 mΩ), making it optimal for 200–500 kHz SMPS where both conduction and switching losses must be minimized without over-specifying driver capability.
Availability
PHP71NQ03LT,127 is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and motor drive half-bridges requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.
Supply support for PHP71NQ03LT,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, headquartered in Eindhoven, Netherlands.
The PHP71NQ03LT,127 belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, designed specifically for high-efficiency, medium-frequency switching in industrial power conversion and motor control applications where gate-drive simplicity and thermal performance are critical.
FAQ
What is the maximum continuous drain current rating for PHP71NQ03LT,127?
The PHP71NQ03LT,127 is rated for 75 A continuous drain current (ID) at mounting base temperature (Tmb) of 25 °C, derating to 57.7 A at Tmb = 100 °C. This rating assumes proper heatsinking via the isolated mounting base and adheres to the SOA curve defined in Figure 3 of the datasheet.
Is PHP71NQ03LT,127 compatible with 3.3 V microcontroller GPIO drive?
Yes, PHP71NQ03LT,127 has a gate-threshold voltage (VGS(th)) of 1.0–2.5 V at 25 °C and achieves ≤10 mΩ RDS(on) at VGS = 4.5 V, making it fully compatible with 3.3 V logic levels. Full enhancement is confirmed at VGS = 4.5 V, eliminating need for external level shifters in most embedded control applications.
How is thermal management handled for PHP71NQ03LT,127?
PHP71NQ03LT,127 uses a TO-220AB (SOT78) package with the mounting base internally connected to the drain. Effective thermal management requires mechanical attachment to an insulated heatsink, with thermal resistance from junction to mounting base (Rth(j-mb)) specified at 1.25 K/W. PCB copper area alone is insufficient for full-load operation.
Does PHP71NQ03LT,127 include an integrated body diode, and what are its characteristics?
Yes, PHP71NQ03LT,127 includes an integrated source-drain body diode rated for 75 A DC forward current. Its reverse recovery time (trr) is 29 ns and recovered charge (Qr) is 20 nC at IS = 10 A, supporting efficient asynchronous rectification and flyback operation in non-synchronous topologies.
What is the safe operating area (SOA) limitation for PHP71NQ03LT,127 at 100 VDS?
PHP71NQ03LT,127 is not rated for 100 VDS; its absolute maximum VDS is 30 V. At VDS = 10 V, the SOA supports up to 240 A peak drain current for pulses ≤10 µs. Operation above 30 V violates Absolute Maximum Ratings and risks immediate device failure.
PHP71NQ03LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.2 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1220 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 120W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP71NQ03LT,127 FAQ
1.How can I place an order for PHP71NQ03LT,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP71NQ03LT,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP71NQ03LT,127 reliable?
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5.How can I obtain technical support or documentation for PHP71NQ03LT,127?
For technical support, including PHP71NQ03LT,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP71NQ03LT,127 requirements.
6.How does Aetrix verify that PHP71NQ03LT,127 is sourced from the original manufacturer or authorized distributors?
All PHP71NQ03LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP71NQ03LT,127 meets industry standards.
7.What is the process for return or replacement of PHP71NQ03LT,127?
All PHP71NQ03LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP71NQ03LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP71NQ03LT,127 part is unused and in its original packaging.
Return procedure for PHP71NQ03LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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