NXP Semiconductors PHP73N06T,127
- Part No.:
- PHP73N06T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP73N06T,127.pdf
- Description:
- MOSFET N-CH 60V 73A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,142
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Product details
Overview
PHP73N06T from NXP Semiconductors (formerly Philips) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT78 (TO-220AB) package, rated for 60 V VDS, 73 A ID (DC at Tmb = 25 °C), and 149 W total power dissipation. It delivers 12 mΩ RDS(on) at VGS = 10 V and ID = 25 A, enabling high-efficiency switching in DC-DC converters and SMPS primary-side switches.
For engineers reviewing the PHP73N06T datasheet, PHP73N06T pinout, PHP73N06T application, or PHP73N06T equivalent, key selection criteria include its low on-resistance, avalanche ruggedness (125 mJ EAS), thermal resistance to mounting base (0.9 K/W), and compatibility with standard-level gate drive (VGS(th) = 2–4 V).
Technical Context
This device uses TrenchMOS™ technology to achieve low RDS(on) and fast switching with Qg(tot) = 54 nC and tr = 79 ns (typ). Its gate threshold voltage (2–4 V at Tj = 25 °C) supports direct logic-level drive from 5 V microcontrollers or PWM controllers without level-shifting.
The integrated source-drain diode exhibits VSD = 0.85 V (typ) at IS = 25 A and trr = 54 ns (typ), supporting synchronous rectification and freewheeling in buck and flyback topologies. Avalanche capability is specified under unclamped inductive load conditions (EAS = 125 mJ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; suitable for 48 V input systems and 24 V industrial rails. |
| ID (DC) | 73 A at Tmb = 25 °C - Continuous current rating with heatsink; derates to 52 A at Tmb = 100 °C. |
| RDS(on) | 12 mΩ (typ) at VGS = 10 V, ID = 25 A - Low conduction loss enables <1.5 W dissipation at 30 A, reducing heatsink size. |
| EAS | 125 mJ - Non-repetitive avalanche energy; supports robust operation during inductive turn-off transients. |
| Qg(tot) | 54 nC - Total gate charge determines driver strength requirement; compatible with common 1 A gate drivers. |
| Rth(j-mb) | 0.9 K/W - Junction-to-mounting-base thermal resistance; enables efficient heat transfer to heatsink without thermal interface material dependency. |
| VGS(th) | 2–4 V at Tj = 25 °C - Standard-level gate threshold allows direct drive from 3.3 V/5 V logic with margin. |
Pinout & Package
SOT78 (TO-220AB) plastic single-ended package with isolated mounting base connected internally to drain. Mounting base serves as both mechanical heatsink interface and electrical drain terminal.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≤±20 V gate-source voltage; low input capacitance (Ciss = 1848 pF typ) eases driving. |
| 2 | Drain (D) | Main power output terminal; electrically tied to mounting base; must be isolated from PCB ground plane unless drain-referenced topology. |
| 3 | Source (S) | Power return path and reference for gate drive; forms common node with load in low-side switch configuration. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 12 mΩ RDS(on) in TO-220AB, reducing conduction losses by >30% vs. planar MOSFETs of same die size. |
| Low gate charge (54 nC) | Reduces switching losses and driver power consumption; supports >200 kHz operation with minimal gate drive overhead. |
| Avalanche-rated (125 mJ) | Eliminates need for external snubbers in hard-switched inductive loads, improving system reliability without added components. |
| Integrated body diode (trr = 54 ns) | Supports freewheeling and synchronous rectification in DC-DC converters without external Schottky diode. |
| Mounting base as drain | Provides low-inductance, high-current drain connection and direct thermal path to heatsink-no solder joint thermal bottleneck. |
Applications
| DC-DC Converter Primary Switch | Industrial Motor Drive Half-Bridge |
|---|---|
Use Scenario: High-current step-down converter in telecom power shelf delivering 12 V/40 A from 48 V input. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300 kHz with 50% duty cycle. Use Value: 12 mΩ RDS(on) limits conduction loss to 1.92 W at 40 A, enabling compact heatsink design and >95% efficiency. |
Use Scenario: 24 V BLDC motor control in factory automation, requiring bidirectional current handling and PWM commutation. IC Role / Device Role / Timing Role: High-current half-bridge low-side switch with 100 µs dead-time and 20 kHz PWM frequency. Use Value: 125 mJ avalanche energy withstands back-EMF spikes during rapid deceleration, eliminating external clamping diodes. |
| Switched-Mode Power Supply (SMPS) | UPS Inverter Output Stage |
Use Scenario: 500 W offline flyback converter for industrial instrumentation with universal AC input. IC Role / Device Role / Timing Role: Primary-side power switch in discontinuous conduction mode (DCM), switching at 65 kHz. Use Value: Fast 79 ns rise time and 54 ns fall time minimize switching transition losses, improving light-load efficiency. |
Use Scenario: 1 kVA online UPS inverter stage converting 350 V DC bus to 230 V AC output via full-bridge topology. IC Role / Device Role / Timing Role: Low-side switch in full-bridge leg, conducting up to 73 A peak during overload conditions. Use Value: 73 A DC rating at Tmb = 25 °C and 0.9 K/W Rth(j-mb) support sustained high-current operation without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | 75 A/75 V, RDS(on) = 10.5 mΩ (VGS = 10 V), TO-220 package, higher gate charge (120 nC) | Higher voltage margin but slower switching due to 2.2× higher Qg; less suitable for >150 kHz designs | Prefer when 75 V blocking is required and gate drive strength permits higher Qg. |
| IRFZ44NPBF | 49 A/55 V, RDS(on) = 28 mΩ (VGS = 10 V), TO-220, lower cost, no avalanche rating | Lower current/voltage rating and no specified EAS; unsuitable for inductive hard-switching or overload protection | Acceptable only in low-stress, non-avalanche-critical 24 V/30 A applications with conservative derating. |
Compared with STP75NF75 and IRFZ44NPBF, PHP73N06T offers optimal balance of 60 V rating, 73 A current capacity, 12 mΩ on-resistance, and verified 125 mJ avalanche ruggedness-making it uniquely suited for industrial SMPS and motor drives where reliability under transient stress is mandatory.
Availability
PHP73N06T is available at Aetrix Electronics and suitable for switched-mode power supplies, industrial motor drives, and DC-DC converters requiring stable component supply and long-term production continuity.
Supply support for PHP73N06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on automotive, industrial & IoT, mobile, and communication infrastructure solutions.
The PHP73N06T belongs to NXP's legacy TrenchMOS™ power MOSFET family, engineered for high-current, medium-voltage switching in industrial power conversion and motor control applications.
FAQ
What is the maximum continuous drain current rating for PHP73N06T?
The PHP73N06T supports 73 A DC drain current at mounting base temperature (Tmb) = 25 °C and VGS = 10 V. This rating decreases to 52 A at Tmb = 100 °C per Figure 2 in the datasheet. Derating must follow the normalized curve in Figure 2, not linear interpolation, due to thermal saturation effects in the TO-220AB package.
Does PHP73N06T have avalanche capability, and how is it specified?
Yes, PHP73N06T is rated for non-repetitive avalanche energy (EAS) of 125 mJ under unclamped inductive load conditions: IAS = 50 A, tp = 0.1 ms, VDD ≤ 25 V, RGS = 50 Ω, VGS = 5 V, and starting junction temperature of 25 °C. This specification is validated per JEDEC standards and enables robust operation during inductive turn-off without external protection.
What is the gate-source threshold voltage range for PHP73N06T?
The PHP73N06T has a gate-source threshold voltage (VGS(th)) of 2–4 V at Tj = 25 °C and 1–? V at Tj = 175 °C (min only specified). This standard-level threshold allows direct drive from 3.3 V or 5 V logic outputs, though full enhancement (RDS(on) minimization) requires ≥10 V gate drive per datasheet test conditions.
Can PHP73N06T be used in surface-mount designs?
No-PHP73N06T is packaged exclusively in SOT78 (TO-220AB), a through-hole plastic package with a metal mounting base designed for heatsink attachment. The PHB73N06T variant uses SOT404 (D2-PAK) for surface-mount use, but PHP73N06T itself is not SMT-compatible and requires vertical mounting with screw or clip heatsinking.
What is the thermal resistance from junction to mounting base for PHP73N06T?
The PHP73N06T has a maximum thermal resistance from junction to mounting base (Rth(j-mb)) of 0.9 K/W, as specified in Table 4. This value assumes proper mechanical contact between the mounting base and heatsink; actual performance depends on thermal interface material quality and clamping force, but the 0.9 K/W rating provides a verified worst-case boundary for thermal design.
PHP73N06T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2464 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 166W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP73N06T,127 FAQ
1.How can I place an order for PHP73N06T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP73N06T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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5.How can I obtain technical support or documentation for PHP73N06T,127?
For technical support, including PHP73N06T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP73N06T,127 requirements.
6.How does Aetrix verify that PHP73N06T,127 is sourced from the original manufacturer or authorized distributors?
All PHP73N06T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP73N06T,127 meets industry standards.
7.What is the process for return or replacement of PHP73N06T,127?
All PHP73N06T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP73N06T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP73N06T,127 part is unused and in its original packaging.
Return procedure for PHP73N06T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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