NXP Semiconductors PHP75NQ08T,127

Overview

PHP75NQ08T,127 from NXP Semiconductors is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 75 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 157 W total power dissipation. It delivers 11.7 mΩ R_DS(on) at V_GS = 10 V and I_D = 25 A, T_j = 25 °C, and is optimized for high-efficiency DC-to-DC conversion and industrial switching loads.

For engineers reviewing the PHP75NQ08T,127 datasheet, PHP75NQ08T,127 pinout, PHP75NQ08T,127 application, or PHP75NQ08T,127 equivalent, key selection criteria include verified R_DS(on) performance at elevated junction temperature, gate-drive compatibility with standard 10 V logic, avalanche energy rating (120 mJ), thermal resistance to mounting base (0.95 K/W), and suitability for motor drive, UPS, and industrial power control circuits.

Technical Context

This device employs TrenchMOS technology to achieve low on-state resistance while maintaining robust avalanche ruggedness and stable threshold voltage across temperature (V_GS(th) = 2–4 V at T_j = 25 °C). Its gate charge profile-Q_G(tot) = 40 nC, Q_GD = 15 nC-supports efficient high-frequency switching up to several hundred kHz in hard-switched topologies.

The source-drain diode exhibits V_SD = 0.85–1.2 V at I_S = 15 A and T_j = 25 °C, with t_rr = 74 ns and Q_r = 94 nC, enabling moderate-speed freewheeling in non-synchronous buck or flyback converters without requiring external Schottky supplementation.

Key Specifications

Pinout & Package

PHP75NQ08T,127 uses the TO-220AB (SOT78) plastic single-ended package with heatsink-mounted mounting base. The metal mounting base is electrically connected to the drain terminal and serves as both thermal path and high-current drain connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IRFZ44NPBF, PHP75NQ08T,127 offers superior R_DS(on) and lower gate charge for 48 V systems, enabling higher efficiency and simpler gate drive design-making it optimal for new DC-DC, UPS, and industrial switching designs requiring 75 V rating and thermal headroom.

Availability

PHP75NQ08T,127 is available at Aetrix Electronics and suitable for DC-to-DC converters, uninterruptible power supplies, and industrial motor control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for PHP75NQ08T,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

PHP75NQ08T,127 belongs to NXP's TrenchMOS power MOSFET product line, engineered for high-efficiency, high-reliability switching in computing, communications, consumer, and industrial power systems-emphasizing low conduction loss, avalanche ruggedness, and standard-level gate compatibility.

FAQ

What is the maximum continuous drain current rating for PHP75NQ08T,127?

The PHP75NQ08T,127 is rated for 75 A continuous drain current at mounting base temperature (T_mb) = 25 °C, derating to 53 A at T_mb = 100 °C per Figure 1 in the datasheet. This rating assumes proper heatsinking via the metal mounting base (pin 2), which is electrically connected to the drain and serves as the primary thermal path.

Does PHP75NQ08T,127 require a gate driver IC, or can it be driven directly by a microcontroller?

PHP75NQ08T,127 features standard-level gate drive compatibility and fully enhances at V_GS = 10 V, making it suitable for direct drive from 5 V or 12 V logic sources. However, due to its 40 nC total gate charge, a microcontroller GPIO alone cannot provide sufficient peak current; a discrete buffer (e.g., TC4420) or dedicated gate driver is required for reliable switching above 10 kHz.

What is the avalanche energy rating of PHP75NQ08T,127, and how is it tested?

The PHP75NQ08T,127 has a non-repetitive drain-source avalanche energy (E_AS) rating of 120 mJ, measured under conditions of V_GS = 10 V, T_j(init) = 25 °C, I_D = 35 A, V_sup ≤ 75 V, unclamped, t_p = 0.07 ms, and R_GS = 50 Ω. This rating confirms robustness against inductive turn-off transients in motor and relay driving applications without external clamping.

Is the mounting base of PHP75NQ08T,127 electrically isolated from the drain terminal?

No-the mounting base (pin 2) of PHP75NQ08T,127 is internally connected to the drain terminal, as confirmed in Table 2 (Pinning information) and Figure 14 (Package outline). This requires electrical isolation between the heatsink and other circuit nodes unless the drain is at system ground potential.

What is the typical R_DS(on) of PHP75NQ08T,127 at elevated junction temperature?

The PHP75NQ08T,127 exhibits R_DS(on) = 24.6 mΩ (max) at V_GS = 10 V, I_D = 25 A, and T_j = 175 °C, per Table 6. This represents approximately 2.1× increase over its 25 °C value (11.7 mΩ typ.), a characteristic behavior of silicon MOSFETs that must be accounted for in worst-case thermal design.